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IEEE Journal of Solid-State Circuits

A Polar-Modulation-Based Cryogenic Transmon Qubit State Controller in 28 nm Bulk CMOS for Superconducting Quantum Computing

Yanshu Guo, Qichun Liu, Yaoyu Li, Wenqiang Huang, Tian Tian, Siqi Zhang, Nan Wu, Songyao Tan, Ning Deng, Zhihua Wang, Hanjun Jiang, Tiefu Li, Yuanjin Zheng

Published Sep 26, 2023• 12 citations
Publisher

Abstract

This article presents a cryogenic transmon qubit state controller integrated circuit (IC) working at a temperature of 3.5 K for superconducting quantum computing (QC) applications. The qubit state controller IC comprises a polar-modulation-based XY -path driver and a current-steering digital-to-analog converter (DAC)-based${Z}$-path driver. To generate the XY -path driving pulse with arbitrary envelopes in the frequency range of 4–6 GHz, a switched-capacitor digital power amplifier (DPA) is adopted for amplitude modulation, and an injection locking local oscillator (IL-LO) with a constant-slope digital-to-time-converter (DTC) is used for open-loop phase modulation. With the proposed DPA and IL-LO, the controller can control a qubit with a compact architecture. Fabricated in the 28-nm bulk CMOS process, the controller IC occupies an active die area of 0.9 mm2 per driving channel. The controller achieves a spurious-free dynamic range (SFDR) of 40 dB for a 1 GS/s XY -path driver and an SFDR of 48 dB for a 1 GS/s${Z}$-path driver at 3.5 K. The controller consumes a power of 13.7 mW per qubit. A Rabi experiment at 13.9 MHz, a Ramsey experiment at 3.09 MHz, and a T1 experiment at 15.87$\mu \text{s}$are conducted using the presented controller IC at 3.5 K to control the transmon superconducting qubit at 10 mK directly.

DOI
10.1109/jssc.2023.3311639

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This article presents a cryogenic transmon qubit state controller integrated circuit (IC) working at a temperature of 3.5 K for superconducting quantum computing (QC) applications. The qubit state controller IC comprises a polar-modulation-based XY -path driver and a current-steering digital-to-analog converter (DAC)-basedZ{Z}Z-path driver. To generate the XY -path driving pulse with arbitrary envelopes in the frequency range of 4–6 GHz, a switched-capacitor digital power amplifier (DPA) is adopted for amplitude modulation, and an injection locking local oscillator (IL-LO) with a constant-slope digital-to-time-converter (DTC) is used for open-loop phase modulation. With the proposed DPA and IL-LO, the controller can control a qubit with a compact architecture. Fabricated in the 28-nm bulk CMOS process, the controller IC occupies an active die area of 0.9 mm2 per driving channel. The controller achieves a spurious-free dynamic range (SFDR) of 40 dB for a 1 GS/s XY -path driver and an SFDR of 48 dB for a 1 GS/sZ{Z}Z-path driver at 3.5 K. The controller consumes a power of 13.7 mW per qubit. A Rabi experiment at 13.9 MHz, a Ramsey experiment at 3.09 MHz, and a T1 experiment at 15.87μs\mu \text{s}μsare conducted using the presented controller IC at 3.5 K to control the transmon superconducting qubit at 10 mK directly.
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In today's mainstream superconducting quantum computing platforms in a dilution refrigerator, the qubits work at a cryogenic temperature (CT) of a few tens of mK, while the qubit controller hardware works on plates with temperature ranging from a few K to room temperature (RT). The highly-integrated cryo-CMOS qubit controller ASIC that can fully work at 3-4K has been proven to be the most feasible way to scale down the quantum computing system [1–5]. In [1], a pulse modulator is implemented with a limited qubit driving capability, which can only generate fixed length symmetric driving pulse. The controllers in [2], [3] generated the RF driving pulse with a frequency division multiplexing (FDM) mode, with the power dissipation of 192mW/qubit and 46.5mW/qubit, respectively. In [4], a local oscillator (LO) was included to improve the controller integration level, and the chip power consumption was 24.1mW/qubit. An arbitrary waveform generation (AWG) functionality digital design was presented in [5] with a power consumption of 23.1mW/qubit. Nevertheless, with continuously increasing number of qubits to integrate, it remains as one of the major tasks to further reduce the power consumption and size of controller.
This article will review recent progress in cryogenic CMOS designs for future scaled quantum computing applications. After introducing the scaling challenges associated with qubit control and readout electronics operating at room temperature, approaches taken to date to cryogenic control electronics design will be discussed, focusing on the most recent relevant publications. Elements of ultra-low power circuit and system design approaches for cryogenic controllers in scaled CMOS nodes (40nm to 14nm) will be reviewed, including a discussion of current state-of-the art cryogenic controller performance and power efficiency. Note that leading designs, when operated as transmon qubit state controllers, have achieved gate error rates in the range of 10-4 to 10-3 achieving spurious free dynamic range (SFDR) of ~40dB while consuming 4-23mW of power per qubit under active control, with power efficiency strongly driven by the complexity of the digital processor integrated in the controller design. These demonstrations, while significant, are just the first steps toward achieving the performance, efficiency, and scalability that will be required for future systems. This review article will discuss fundamental tradeoffs in CMOS cryogenic designs in order to address the needs of future scaled quantum computing systems.
In this paper, a broadband driver module is realized for control of a single transmon Qubit. The driver module comprises a IQ up-conversion mixer designed for operation at 4 K, implemented using a 28-nm CMOS process as a prototype for multi-Qubit control. The RF port of the driver module offers the conversion gain of 0.3 ± 3 dB at 4 K over the frequency range of 4 to 10 GHz, with a total DC power consumption of 11 mW. The power handling capability larger than −35 dBm enables to effective driving of the Qubit. The driver module performance is demonstrated through the successful control of a single Qubit. Furthermore, the fidelity of 99.32% is measured by injecting a 4.34-GHz π-pulse signal with a duration of 20 ns, determined through Rabi oscillation experiments.