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Topical Meeting on Optical Bistability (OB)

Increasing Absorption Bistability in Hybrid Silicon Devices and the Control of the Characteristics

Hongchen Zhai, Yasushi Iyechika, D. Jäger

Published Jan 1, 1988• 0 citations

Abstract

Increasing absorption optical and optoelectronic bistability in hybrid thermooptical Si devices (Fig. 1) are studied at 1.06 μm both theoretically and experimentally. The optical nonlinearity of such SEED devices is largely enhanced by the optoelectronically generated electrical power [1,2] and it is shown that the characteristics can easily be controlled by the applied voltage. Additionally, it is found that the external resistance R adds a further nonlinearity. As an important result, two hysteresis cycles can now occur in succeeding regions of the input power (Fig. 2). If R is replaced by a conventional photodetector or a second SEED element, interesting logic operations between two independent optical signals are possible. Au doped samples reveal that the bistability depends on the orientation of the electric field. Since Au traps control also the absorption we conclude finally that the device characteristics can largely be engineered.

DOI: 10.1364/obi.1988.the.6

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Increasing absorption optical and optoelectronic bistability in hybrid thermooptical Si devices (Fig. 1) are studied at 1.06 μm both theoretically and experimentally. The optical nonlinearity of such SEED devices is largely enhanced by the optoelectronically generated electrical power [1,2] and it is shown that the characteristics can easily be controlled by the applied voltage. Additionally, it is found that the external resistance R adds a further nonlinearity. As an important result, two hysteresis cycles can now occur in succeeding regions of the input power (Fig. 2). If R is replaced by a conventional photodetector or a second SEED element, interesting logic operations between two independent optical signals are possible. Au doped samples reveal that the bistability depends on the orientation of the electric field. Since Au traps control also the absorption we conclude finally that the device characteristics can largely be engineered.

A novel hybrid semiconductor device is presented which shows optical bistability and a clear optical multistability at milliwatt input powers. Experimentally, a silicon etalon is used as a Fabry-Perot interferometer where an electric field is additionally applied by using integrated electrical contacts. At 1.06 μm the device exhibits the combined properties of a photodetector and an optical modulator. Due to this self-electro-optic effect a large optical nonlinearity is achieved which is theoretically attributed to electrical and optical heating of the sample.

The characteristics of novel optical bistable devices which integrate both interdigital electrodes and amorphous silicon photovoltaic detectors on the Ti-diffused LiNbO3 waveguide are described. In the devices, the transmitted light of the interdigital electrodes enters the amorphous silicon photovoltaic detectors and the output voltage of the detectors is fedback to the electrodes. Optical bistable operation occurs due to the nonlinear dependence of the transmission efficiency of the electrodes on the applied voltage. The characteristics of differential gain and hysteresis of the device were observed experimentally.

The ability to enhance optical nonlinearities associated with the photogeneration of free carriers can be accomplished with carrier multiplication. The gain mechanism provided by carrier multiplication is inherently feasible in avalanche photodiodes. We present results from optical bistability experiments performed on silicon avalanche photodiodes under reverse bias conditions in the case of thermal nonlinearities (Joule heating) and electronic nonlinearities (free carrier plasma effects). The reflected intensity versus the operating voltage is measured at the input intensity of the diode, as is also the output photocurrent versus operating voltage; in both instances, the reflected signal or photocurrent are multivalued functions of the operating voltage. We label such a device as an avalanche-enhanced self-electro-optic-effect device or A-SEED.