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IEEE Journal of Quantum Electronics

Low-power optical bistability and multistability in a self-electro-optic silicon interferometer

D. Jäger, Franz Forsmann, B. Wedding

Published Sep 1, 1985• 29 citations
Publisher

Abstract

A novel hybrid semiconductor device is presented which shows optical bistability and a clear optical multistability at milliwatt input powers. Experimentally, a silicon etalon is used as a Fabry-Perot interferometer where an electric field is additionally applied by using integrated electrical contacts. At 1.06 μm the device exhibits the combined properties of a photodetector and an optical modulator. Due to this self-electro-optic effect a large optical nonlinearity is achieved which is theoretically attributed to electrical and optical heating of the sample.

DOI
10.1109/jqe.1985.1072819

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A novel hybrid semiconductor device is presented which shows optical bistability and a clear optical multistability at milliwatt input powers. Experimentally, a silicon etalon is used as a Fabry-Perot interferometer where an electric field is additionally applied by using integrated electrical contacts. At 1.06 μm the device exhibits the combined properties of a photodetector and an optical modulator. Due to this self-electro-optic effect a large optical nonlinearity is achieved which is theoretically attributed to electrical and optical heating of the sample.
Increasing absorption optical and optoelectronic bistability in hybrid thermooptical Si devices (Fig. 1) are studied at 1.06 μm both theoretically and experimentally. The optical nonlinearity of such SEED devices is largely enhanced by the optoelectronically generated electrical power [1,2] and it is shown that the characteristics can easily be controlled by the applied voltage. Additionally, it is found that the external resistance R adds a further nonlinearity. As an important result, two hysteresis cycles can now occur in succeeding regions of the input power (Fig. 2). If R is replaced by a conventional photodetector or a second SEED element, interesting logic operations between two independent optical signals are possible. Au doped samples reveal that the bistability depends on the orientation of the electric field. Since Au traps control also the absorption we conclude finally that the device characteristics can largely be engineered.
We have built self-contained bistable optical devices using integrated Fabry-Perot resonators formed by attaching dielectric mirrors to the cleaved ends of a LiNbO3 substrate containing a Ti in-diffused waveguide modulator. Feedback from a novel composite photovoltaic detector which samples the output beam is applied to the modulator electrodes. We also describe an off-axis extraordinary wave resonator which permits low-energy operation. These integrated bistable devices operate solely with optical inputs and outputs; no source of electrical energy is required.
Abstract This paper briefly reviews the nonlinear optical and electro-optical properties and applications of GaAs—AlGaAs multiple quantum wells, all of which are compatible with laser diodes or semiconductor electronics or both. They show large nonlinear absorption and refraction (associated with their strong room-temperature exciton resonances) applicable to all-optical devices. They also show large electroabsorptive effects, some of which are unique to the quantum wells at any temperature, which are so strong that optical modulators can be made with micrometre dimensions. A new class of optical bistability (due to increasing absorption) is also reviewed; combination of this with the electroabsorptive effects enables a new mirrorless optical switch called a Self Electro-optic Effect Device (SEED), which sets a new standard for optical switching energies, with energy densities reduced by a factor of six by comparison to even the best resonant cavity devices.