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Conference on Lasers and Electro-Optics

Self-electro-optic bistability in hybrid silicon photonic microring resonators

Jiajiu Zheng, Dan Feng Guo, Arka Majumdar

Published Jan 1, 2017• 0 citations
Publisher

Abstract

We propose an on-chip self-electro-optic bistable device based on hybrid silicon microring resonators. The device enables bistability at low optical power with the switching energy of only ~5 fJ and can potentially operate at ~100 GHz.
DOI
10.1364/cleo_at.2017.jw2a.128

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A novel hybrid semiconductor device is presented which shows optical bistability and a clear optical multistability at milliwatt input powers. Experimentally, a silicon etalon is used as a Fabry-Perot interferometer where an electric field is additionally applied by using integrated electrical contacts. At 1.06 μm the device exhibits the combined properties of a photodetector and an optical modulator. Due to this self-electro-optic effect a large optical nonlinearity is achieved which is theoretically attributed to electrical and optical heating of the sample.
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We demonstrate, for the first time to our knowledge, optical bistability on a highly integrated silicon device, using a 5-microm-radius ring resonator. The strong light-confinement nature of the resonator induces nonlinear optical response with low pump power. We show that the optical bistability allows all-optical functionalities, such as switching and memory with microsecond time response and a modulation depth of 10 dB, driven by pump power as low as 45 microW. Silicon optical bistability relies on a fast thermal nonlinear optical effect presenting a 500-kHz modulation bandwidth.