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Chinese Optics Letters

Optical bistability in a silicon nitride microring integrated with 2D PtSe2 [Invited]

Jiaqi Wang, Yingqi Xu, Zhijian Mao, Guoxian Wu, Rongxiang Guo, Xu Li, Yu Du, Youfu Geng, Xuejin Li, Hon Ki Tsang, Zhenzhou Cheng

Published Jan 1, 2024• 5 citations
Publisher

Abstract

Optical bistability can be used to explore key components of all-optical information processing systems, such as optical switches and optical random memories.The hybrid integration of emerged two-dimensional layered PtSe 2 with waveguides is promising for the applications.We demonstrated the optical bistability in the PtSe 2 -on-silicon nitride microring resonator induced by a thermo-optic effect.The fabricated device has a resonance-increasing rate of 6.8 pm/mW with increasing optical power.We also established a theoretical model to explain the observation and analyze the device's performance.The study is expected to provide a new scheme for realizing all-optical logic devices in next-generation information processing systems.

DOI
10.3788/col202422.091301

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Optical bistability can be used to explore key components of all-optical information processing systems, such as optical switches and optical random memories.The hybrid integration of emerged two-dimensional layered PtSe 2 with waveguides is promising for the applications.We demonstrated the optical bistability in the PtSe 2 -on-silicon nitride microring resonator induced by a thermo-optic effect.The fabricated device has a resonance-increasing rate of 6.8 pm/mW with increasing optical power.We also established a theoretical model to explain the observation and analyze the device's performance.The study is expected to provide a new scheme for realizing all-optical logic devices in next-generation information processing systems.
We describe the optical bistability phenomenon in a silicon-on-insulator microring resonators device by using an analytical theory, which includes both linear and nonlinear effects such as two-photon absorption, Kerr effect, free carrier and thermo-optic effect (TOE). We show that the bistable switching threshold and the hysteresis loop width can be tuned by geometrical parameters of the device and by the nonlinear parameters. The accuracy of the analytical approach is verified by comparing the spectrum responds with the predicting data from a commercial finite-difference time-domain software tool, and a very close agreement is found between the two when TOE is incorporated in analytical theory. In addition, our analysis reveals that a new type of hysteresis loop occurs at low input intensity. The mode suppression of the designed device by Vernier effect for tunable filter applications is also briefly discussed.
We quantitatively analyze the performance of optical memories based on Kerr bistability in microcavites. We model a silicon nitride microring and a silica toroid microcavity, and examine the performances of these cavities in an actual situation where there is a thermo-optic effect. Numerical simulations based on coupled mode theory and the thermal diffusion equation reveal that an input power of 1.8 W is necessary to achieve a Kerr bistable memory in a silicon nitride microring, while that of only 1.7 mW is necessary in a silica toroid microcavity. This result shows that the use of silica toroid microcavity is advantageous when we want to demonstrate a Kerr bistable memory operation with a reasonably low input power. In addition, we quantitatively investigate the trade-off between the required input power and the response speed of the device.
Resonance shift and bistability in a silicon microring resonator operating at higher optical power levels pose serious difficulties, especially in nonlinear four wave mixing process. A solution of parking a laser wavelength around any of the resonances of a microring resonator and operating at any power levels is explored by integrating a microheater. We have shown with the existing theoretical model that the previous history of phase detuning in a silicon microring resonator determines the effective gain in stimulated four wave mixing process. The experimental results have been shown to be closely matching with the simulation results. For a microring resonator of radius 50 μm, an improved stimulated four wave mixing gain of ~ 11.6 dB has been observed while thermo-optically blue-shifting resonances in comparison to that of red-shifting resonances, for a launched pump power of 8.4 mW operating at a slightly off-resonant wavelength λp. The proposed technique can be used in designing actively controlled efficient photon sources in a large-scale integrated quantum photonic circuit operating at λ ~ 1550 nm.
Optical bistability (BI) and self-pulsation (SP) in high-QQQ silicon microring resonators (MRRs) induced by thermo-optical (TO) effect and other nonlinear effects are theoretically studied with coupled mode theory and linear stability analysis method. It is found that the boundaries for both BI and SP are mainly restricted by two counteracting effects: free carrier dispersion effect and TO effect. If the refractive index changes of a MRR caused by these two effects are on the same order of magnitude, the output power will exhibit much more complicated dependence on the input power and wavelength, namely, input-power-dependent multi-BI and multi-SP regions will exist at certain input wavelength range. The controllability of multi-BI and multi-SP phenomena by the input power and input wavelength could be very useful in all-optical nonlinear devices.
In this work, we experimentally study the optical bistability (BI) behavior in active silicon microring resonators (MRR). A stable hysteresis loop response at the output port is demonstrated at a power level higher than the BI threshold, taking into account the different detuning and free carrier life-times. That hysteresis is observed at low and high BI thresholds, which can be used for all-optical switching and optical routers. The MRR is placed inside a reverse-biased PIN junction and fabricated by CMOS technology. It records a loaded Q-factor, linewidth (3 dB width of the spectrum), and extinction ratio (ER) around105,15.310^{5},15.3105,15.3pm, and 20 dB, respectively.