Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

IEEE International Conference on Group IV Photonics (GFP)

High speed optical bistability in the cascaded silicon photonic crystal nanoresonantors

Yi Wang, Mengxi Ji, Zheng Wu, Qingzhong Huang, Jinsong Xia, Jinzhong Yu

Published Aug 1, 2014• 0 citations
Publisher

Abstract

We demonstrate optical bistability (OB) in the cascaded silicon photonic crystal (SiPhC) nanoresonators using 10-GHz pulse light. The pulse energy to operate this device is less than 40 fJ with switching energy of 4.6 fJ.
DOI
10.1109/group4.2014.6961973

Related papers

All-optical switches and bistable devices using high- Q photonic crystal nanocavities

Takasumi Tanabe, Akihiko Shinya, Eiichi Kuramochi +2 more

We review our recent progress on all-optical switching and bistability using ultrahigh-Q photonic crystal nanocavities. We also discuss all-optical logic gate operations. Because photonic crystal nanocavities can strongly confine photons in a small area for a long time, light can efficiently interact with dipoles. As a result, optical nonlinearities occur at a very low input. Optical nonlinearities are essential as regards all-optical switching and bistability, because they dynamically change such material properties as refractive index. We demonstrate all-optical switching at an operating energy of less than 100 fJ, and bistable operation at less than ~100 μW. In addition, these devices are small and so can operate at a reasonably high speed (~100 ps).

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•Feb 2, 2009•0 citations

Fast bistable all-optical switch and memory on a silicon photonic crystal on-chip

Takasumi Tanabe, Masaya Notomi, Satoshi Mitsugi +2 more

We demonstrate extremely low-power all-optical bistability by utilizing silicon photonic crystal nanocavities, based on the plasma effect of carriers generated by two-photon absorption. Owing to the high quality factor and the small volume of the nanocavities, the photon density inside the cavity becomes extremely high, which leads to a large reduction in operation power. Optical bistable operation in a single nanocavity permits optical read-write memory operation, which opens the possibility of an integrated optical logic circuit on a single chip, based on photonic crystals. The demonstrated bistable threshold power is 0.4 mW with a set pulse energy of 74 fJ, at a switching speed of <100 ps.

Optics Letters•Oct 1, 2005•325 citations

Self-electro-optic bistability in hybrid silicon photonic microring resonators

Jiajiu Zheng, Dan Feng Guo, Arka Majumdar

We propose an on-chip self-electro-optic bistable device based on hybrid silicon microring resonators. The device enables bistability at low optical power with the switching energy of only ~5 fJ and can potentially operate at ~100 GHz.

Conference on Lasers and Electro-Optics•Jan 1, 2017•0 citations

Nonlinear Switching in High-Q Photonic Crystal Nanocavities

Takasumi Tanabe, Akihiko Shinya, Eiichi Kuramochi +1 more

All-optical switching is achieved at an extremely low energy by using silicon photonic crystal nanocavities with a large Q/V. Optical bistability is demonstrated using these devices, which present the possibility of fabricating all-optical photonic integrated logic gates on a chip.

Integrated Photonics and Nanophotonics Research and Applications•Jan 1, 2008•2 citations

Extremely low power optical bistability in silicon demonstrated using 1D photonic crystal nanocavity

Laurent-Daniel Haret, Takasumi Tanabe, Eiichi Kuramochi +1 more

We demonstrate optical bistability in silicon using a high-Q (Q > 105) one-dimensional photonic crystal nanocavity at an extremely low 1.6 microW input power that is one tenth the previously reported value. Owing to the device's unique geometrical structure, light and heat efficiently confine in a very small region, enabling strong thermo-optic confinement. We also showed with numerical analyses that this device can operate at a speed of approximately 0.5 micros.

Optics Express•Nov 4, 2009•114 citations

All-optical memories based on photonic crystal nanocavities

Akihiko Shinya, Shinji Matsuo, Kengo Nozaki +5 more

We demonstrate all-optical bistable memory operation with InGaAsP photonic crystal nanocavities based on refractive index modulation caused by carrier-induced nonlinearity. The minimum bias power for bistability is extremely low at 40 muW and the operating energy required for switching is only 30 fJ.

International Conference on Photonics in Switching•Sep 1, 2009•3 citations
We review our recent progress on all-optical switching and bistability using ultrahigh-Q photonic crystal nanocavities. We also discuss all-optical logic gate operations. Because photonic crystal nanocavities can strongly confine photons in a small area for a long time, light can efficiently interact with dipoles. As a result, optical nonlinearities occur at a very low input. Optical nonlinearities are essential as regards all-optical switching and bistability, because they dynamically change such material properties as refractive index. We demonstrate all-optical switching at an operating energy of less than 100 fJ, and bistable operation at less than ~100 μW. In addition, these devices are small and so can operate at a reasonably high speed (~100 ps).
We demonstrate extremely low-power all-optical bistability by utilizing silicon photonic crystal nanocavities, based on the plasma effect of carriers generated by two-photon absorption. Owing to the high quality factor and the small volume of the nanocavities, the photon density inside the cavity becomes extremely high, which leads to a large reduction in operation power. Optical bistable operation in a single nanocavity permits optical read-write memory operation, which opens the possibility of an integrated optical logic circuit on a single chip, based on photonic crystals. The demonstrated bistable threshold power is 0.4 mW with a set pulse energy of 74 fJ, at a switching speed of <100 ps.