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International Conference on Optoelectronic Science and Engineering '90

Optical bistability in silicon on sapphire thermo-optical seed element

Hongchen Zhai

Published Jul 1, 1990• 1 citation
Publisher

Abstract

We present optical bistability in silicon on sapphire (SOS) thermooptical SEED structures at a visible wavelength of A = 514nm. Theoretical analysis and experimental results show that bistability is due to increasing absorption and thermally induced change of the internal resistance.
DOI
10.1117/12.2294883

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Increasing absorption optical and optoelectronic bistability in hybrid thermooptical Si devices (Fig. 1) are studied at 1.06 μm both theoretically and experimentally. The optical nonlinearity of such SEED devices is largely enhanced by the optoelectronically generated electrical power [1,2] and it is shown that the characteristics can easily be controlled by the applied voltage. Additionally, it is found that the external resistance R adds a further nonlinearity. As an important result, two hysteresis cycles can now occur in succeeding regions of the input power (Fig. 2). If R is replaced by a conventional photodetector or a second SEED element, interesting logic operations between two independent optical signals are possible. Au doped samples reveal that the bistability depends on the orientation of the electric field. Since Au traps control also the absorption we conclude finally that the device characteristics can largely be engineered.
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We analyze theoretically the nonlinear phenomenon of optical bistability inside a ring resonator formed with a silicon-waveguide nanowire and derive an exact parametric relation connecting the output intensity to the input intensity. Our input-output relation accounts for linear losses, the Kerr nonlinearity, two-photon absorption, free-carrier-induced absorption and dispersion, and thermo-optic effects within the resonator. Based on our study, we generalize the standard definition of effective length to allow for all possible losses within a silicon ring resonator. We also present a simplified version of the bistable phenomenon valid for resonators operating in a regime in which losses resulting from two-photon absorption are relatively small. Our analytical results provide clear insight into the physics behind optical bistability and may be useful for designing silicon-based optical memories.