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Electronics Letters

Hybrid optical bistability based on increasing absorption in depletion layer of an Si Schottky seed device

D. Jäger, Franz Forsmann, Hongchen Zhai

Published May 7, 1987• 5 citations
Publisher

Abstract

We report novel experimental results of cavityless optical bistability in the depletion layer of an Si Schottky SEED with CW light of 1.06μm at room temperature, where the induced absorption is largely enhanced by electrooptical feedback.
DOI
10.1049/el:19870356

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Increasing absorption optical and optoelectronic bistability in hybrid thermooptical Si devices (Fig. 1) are studied at 1.06 μm both theoretically and experimentally. The optical nonlinearity of such SEED devices is largely enhanced by the optoelectronically generated electrical power [1,2] and it is shown that the characteristics can easily be controlled by the applied voltage. Additionally, it is found that the external resistance R adds a further nonlinearity. As an important result, two hysteresis cycles can now occur in succeeding regions of the input power (Fig. 2). If R is replaced by a conventional photodetector or a second SEED element, interesting logic operations between two independent optical signals are possible. Au doped samples reveal that the bistability depends on the orientation of the electric field. Since Au traps control also the absorption we conclude finally that the device characteristics can largely be engineered.
The authors present a new type of optically bistable phase modulator utilizing a self electrooptic effect device (SEED) integrated with an electrooptic wavelength modulator. An electrically bistable SEED, operating on the principle of the quantum-confined Stark effect, controls the bias voltage across an electrooptic waveguide phase modulator to produce optical bistability. A control signal at 0.848 mu m, corresponding to the first electron to heavy hole exciton transition in GaAs/AlGaAs multiple-quantum-well is used to switch 1.152 mu m light propagating through a waveguide in a direction normal to the control beam.>