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IEEE Photonics Technology Letters

A novel optical bistable multiple-quantum-well phase modulator

C. Park, Kumar Shiralagi, Ravi Droopad, GEORGE N. MARACAS

Published Nov 1, 1992• 3 citations
Publisher

Abstract

The authors present a new type of optically bistable phase modulator utilizing a self electrooptic effect device (SEED) integrated with an electrooptic wavelength modulator. An electrically bistable SEED, operating on the principle of the quantum-confined Stark effect, controls the bias voltage across an electrooptic waveguide phase modulator to produce optical bistability. A control signal at 0.848 mu m, corresponding to the first electron to heavy hole exciton transition in GaAs/AlGaAs multiple-quantum-well is used to switch 1.152 mu m light propagating through a waveguide in a direction normal to the control beam.>

DOI
10.1109/68.166950

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The authors present a new type of optically bistable phase modulator utilizing a self electrooptic effect device (SEED) integrated with an electrooptic wavelength modulator. An electrically bistable SEED, operating on the principle of the quantum-confined Stark effect, controls the bias voltage across an electrooptic waveguide phase modulator to produce optical bistability. A control signal at 0.848 mu m, corresponding to the first electron to heavy hole exciton transition in GaAs/AlGaAs multiple-quantum-well is used to switch 1.152 mu m light propagating through a waveguide in a direction normal to the control beam.>
The quantum confined Stark effect has found wide application in devices for optical modulation and bistable switching. Whilst normally-incident strained layer modulators and self electro-optic effect devices (SEEDs) have been demonstrated [1-3], the introduction of strain has provided little performance advantage. Recently there has been a growing interest in the properties of strained piezoelectric structures resulting from growth on orientations other than the (100) [4-6]. In this communication we present the results of an investigation of the electro-optical absorption modulation properties of a strained InGaAs/GaAs multiple quantum well p-i(MQW)-n grown on a (111)B GaAs substrate. Subsequently we demonstrate optical bistability using the self electro-optic effect without the application of an external bias.
Electro-optical effects, such as the Franz-Keldysh effect in bulk materials or the quantum confined Stark effect in quantum well structures, lead to strong optoelectronic nonlinearities which form the basis for optical modulators and optically bistable devices. They result from a modification of the optical absorption properties by an applied electric field and are particularly pronounced in the case of low dimensional semiconductors. We review theoretical modelling and computer simulations of such optoelectronic devices in particular for ZnSe based quantum well structures, where excitonic features dominate even at room temperature. The field dependent absorption spectra are calculated by a many-body theory including the full electron-electron interaction. The transition from the quantum confined Stark effect, which is found for well widths smaller than the exciton Bohr diameter, to the Franz-Keldysh effect, which corresponds to the limit of wide wells, is studied. Optical bistability and switching is found in R-SEED and D-SEED configurations, and the optimization of the device performance is discussed.
Abstract This paper briefly reviews the nonlinear optical and electro-optical properties and applications of GaAs—AlGaAs multiple quantum wells, all of which are compatible with laser diodes or semiconductor electronics or both. They show large nonlinear absorption and refraction (associated with their strong room-temperature exciton resonances) applicable to all-optical devices. They also show large electroabsorptive effects, some of which are unique to the quantum wells at any temperature, which are so strong that optical modulators can be made with micrometre dimensions. A new class of optical bistability (due to increasing absorption) is also reviewed; combination of this with the electroabsorptive effects enables a new mirrorless optical switch called a Self Electro-optic Effect Device (SEED), which sets a new standard for optical switching energies, with energy densities reduced by a factor of six by comparison to even the best resonant cavity devices.
We demonstrate an integrated symmetric self-electrooptic effect device (S-SEED) consisting of two quantum well PIN diodes electrically connected in a series. The device acts as a bistable optical memory element with individual set S and reset R inputs and complementary outputs (optical S-R latch). The switching point is determined by the ratio of the two inputs, making the device insensitive to optical power supply fluctuations when both power beams are derived from the same source; i.e., it solves the problem of critical biasing common to most optically bistable devices.