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Annual Meeting Optical Society of America

Symmetric self-electrooptic effect device

Anthony L. Lentine, Harvard Scott Hinton, David A. B. Miller, J. E. Henry, J. E. Cunningham, Leo M. F. Chirovsky

Published Jan 1, 1987• 23 citations
Publisher

Abstract

We demonstrate an integrated symmetric self-electrooptic effect device (S-SEED) consisting of two quantum well PIN diodes electrically connected in a series. The device acts as a bistable optical memory element with individual set S and reset R inputs and complementary outputs (optical S-R latch). The switching point is determined by the ratio of the two inputs, making the device insensitive to optical power supply fluctuations when both power beams are derived from the same source; i.e., it solves the problem of critical biasing common to most optically bistable devices.

DOI
10.1364/oam.1987.tuj6

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Electro-optical effects, such as the Franz-Keldysh effect in bulk materials or the quantum confined Stark effect in quantum well structures, lead to strong optoelectronic nonlinearities which form the basis for optical modulators and optically bistable devices. They result from a modification of the optical absorption properties by an applied electric field and are particularly pronounced in the case of low dimensional semiconductors. We review theoretical modelling and computer simulations of such optoelectronic devices in particular for ZnSe based quantum well structures, where excitonic features dominate even at room temperature. The field dependent absorption spectra are calculated by a many-body theory including the full electron-electron interaction. The transition from the quantum confined Stark effect, which is found for well widths smaller than the exciton Bohr diameter, to the Franz-Keldysh effect, which corresponds to the limit of wide wells, is studied. Optical bistability and switching is found in R-SEED and D-SEED configurations, and the optimization of the device performance is discussed.