Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

International Journal of Modern Physics B

The electronic states and the optical absorption for an asymmetrical quantum well applied with an external electric field

Yu Liu, Youbin Yu

Published Oct 20, 2019• 2 citations
Publisher

Abstract

Electric field influences on the electronic states and the optical absorption in an asymmetrical quantum well with semiparabolic potential are investigated. The formula for the absorption coefficients in this asymmetrical quantum well with electric field are deduced by applying iterative method and density-matrix approach. The results are discussed with GaAs/AlGaAs materials and show that the external electric field has a significant effect on the electronic states and absorption coefficients of asymmetric quantum wells.

DOI
10.1142/s0217979219503016

Related papers

Linear and Nonlinear Optical Absorptions in Semiparabolic Quantum Wells

ZHANGLi, XIEHong-Jing

By using the compact density matrix approach and iterative procedure, a detailed procedure for the calculation of the linear and nonlinear optical absorption coefficients was given in the electric-field-biased semi parabolic quantum wells(QWs). The simple analytical formulas for the linear and nonlinear optical absorption coefficients in the systems are also deduced. Numerical result on typical GaAs materials shows that,the linear and nonlinear optical absorption coefficients sensitively depend on the applied electric field and the confined potential frequency of the semiparabolic QWs systems as well as the incident optics beam intensity.

Journal of Optoelectronics·laser•Jan 1, 2004•0 citations

Optical absorption in asymmetrical Gaussian potential quantum dot under the application of an electric field*

Xuechao Li, Chun-Bao Ye, Juan Gao +1 more

We theoretically investigate the optical absorption coefficient (OAC) in asymmetrical Gaussian potential quantum dots subject to an applied electric field. Confined wave functions together with energies of electron energies in an effective mass approximation framework are obtained. The OAC is expressed according to the iterative method and the compact-density-matrix approach. Based on our results, OAC is sensitively dependent on external electric field together with the incident optical intensity. Additionally, peak shifts into greater energy as the quantum dot radius decrease. Moreover, the parameters of Gaussian potential have a significant influence on the OAC.

Chinese Physics B•May 13, 2020•34 citations

Intersubband transition in an asymmetry quantum well under intense laser field

Gong Jian

The effect of the electric field and intense laser field on the intersubband transition and optical absorption in an Al0.3Ga0.7As/GaAs asymmetric double quantum well is theoretically investigated by using the transfer matrix approach.The Hartree potential due to the electron-electron interaction is considered in our calculation.For intersubband transitions in an asymmetric double quantum well,the peaks of the absorption coefficient are found to be a blue or red shifted by tuning the intensity of the laser field and the applied electric field.It can be concluded that the intense laser field and external electric field have a considerable influence on the electronic and optical properties for an asymmetric double quantum well.

Journal of Optoelectronics·laser•Jan 1, 2010•0 citations

Optical properties in GaAs/AlGaAs semiparabolic quantum wells by the finite difference method: Combined effects of electric field and magnetic field

Ruyu Yan, Jian Tang, Zhihai Zhang +1 more

In the present work, the optical properties of GaAs/AlGaAs semiparabolic quantum wells (QWs) are studied under the effect of applied electric field and magnetic field by using the compact-density-matrix method. The energy eigenvalues and their corresponding eigenfunctions of the system are calculated by using the differential method. Simultaneously, the nonlinear optical rectification (OR) and optical absorption coefficients (OACs) are investigated, which are modulated by the applied electric field and magnetic field. It is found that the position and the magnitude of the resonant peaks of the nonlinear OR and OACs can depend strongly on the applied electric field, magnetic field and confined potential frequencies. This gives a new way to control the device applications based on the intersubband transitions of electrons in this system.

International Journal of Modern Physics B•Apr 2, 2018•21 citations

Nonlinear optical properties of asymmetric double-graded quantum wells

Hafize Seda Aydınoğlu, S. Şakiroğlu, H. Sarı +2 more

In this work, the effects of the structure parameters, such as the central barrier thickness and the aluminium concentrations x, on the linear and nonlinear intersubband optical absorption coefficients and refractive index changes of the asymmetric double-graded quantum wells (ADGQWs) under the presence of an external static electric field are studied theoretically. The nonlinear optical properties of the ADGQWs are obtained using the compact-density matrix approach and iterative method. The numerical results obtained from the present work show that the external static electric field and the structure parameters play an important role in the optical properties of ADGQWs. Depending on the asymmetric nature of the confinement potential, in an electric field of kV/cm, the overlap between electronic wave functions decreases with increasing field whereas it increases for larger field values. The tunability of intersubband transitions can be applied to optical modulators and various device applications based on the optical transitions of electrons.

The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics•Jun 12, 2018•26 citations

Study on linear and third-order nonlinear optical absorption in special asymmetric quantum wells

Qi Guo

Authors give a detailed procedure for the calculation of the linear and third-order nonlinear optical absorption in special asymmetric quantum wells. It is obtained an analytic formula for the optical absorption by the compact density matrix method and the iterative procedure. Finally, the numerical results are presented for typical GaAs/AlGaAs asymmetric quantum wells. The numerical results show that the incident optical intensity and the asymmetry of the quantum wells have great influences on the optical absorption.

Chinese Journal of Quantum Electronics•Jan 1, 2004•0 citations
Electric field influences on the electronic states and the optical absorption in an asymmetrical quantum well with semiparabolic potential are investigated. The formula for the absorption coefficients in this asymmetrical quantum well with electric field are deduced by applying iterative method and density-matrix approach. The results are discussed with GaAs/AlGaAs materials and show that the external electric field has a significant effect on the electronic states and absorption coefficients of asymmetric quantum wells.
By using the compact density matrix approach and iterative procedure, a detailed procedure for the calculation of the linear and nonlinear optical absorption coefficients was given in the electric-field-biased semi parabolic quantum wells(QWs). The simple analytical formulas for the linear and nonlinear optical absorption coefficients in the systems are also deduced. Numerical result on typical GaAs materials shows that,the linear and nonlinear optical absorption coefficients sensitively depend on the applied electric field and the confined potential frequency of the semiparabolic QWs systems as well as the incident optics beam intensity.
We theoretically investigate the optical absorption coefficient (OAC) in asymmetrical Gaussian potential quantum dots subject to an applied electric field. Confined wave functions together with energies of electron energies in an effective mass approximation framework are obtained. The OAC is expressed according to the iterative method and the compact-density-matrix approach. Based on our results, OAC is sensitively dependent on external electric field together with the incident optical intensity. Additionally, peak shifts into greater energy as the quantum dot radius decrease. Moreover, the parameters of Gaussian potential have a significant influence on the OAC.
The effect of the electric field and intense laser field on the intersubband transition and optical absorption in an Al0.3Ga0.7As/GaAs asymmetric double quantum well is theoretically investigated by using the transfer matrix approach.The Hartree potential due to the electron-electron interaction is considered in our calculation.For intersubband transitions in an asymmetric double quantum well,the peaks of the absorption coefficient are found to be a blue or red shifted by tuning the intensity of the laser field and the applied electric field.It can be concluded that the intense laser field and external electric field have a considerable influence on the electronic and optical properties for an asymmetric double quantum well.
In the present work, the optical properties of GaAs/AlGaAs semiparabolic quantum wells (QWs) are studied under the effect of applied electric field and magnetic field by using the compact-density-matrix method. The energy eigenvalues and their corresponding eigenfunctions of the system are calculated by using the differential method. Simultaneously, the nonlinear optical rectification (OR) and optical absorption coefficients (OACs) are investigated, which are modulated by the applied electric field and magnetic field. It is found that the position and the magnitude of the resonant peaks of the nonlinear OR and OACs can depend strongly on the applied electric field, magnetic field and confined potential frequencies. This gives a new way to control the device applications based on the intersubband transitions of electrons in this system.
In this work, the effects of the structure parameters, such as the central barrier thickness and the aluminium concentrations x, on the linear and nonlinear intersubband optical absorption coefficients and refractive index changes of the asymmetric double-graded quantum wells (ADGQWs) under the presence of an external static electric field are studied theoretically. The nonlinear optical properties of the ADGQWs are obtained using the compact-density matrix approach and iterative method. The numerical results obtained from the present work show that the external static electric field and the structure parameters play an important role in the optical properties of ADGQWs. Depending on the asymmetric nature of the confinement potential, in an electric field of kV/cm, the overlap between electronic wave functions decreases with increasing field whereas it increases for larger field values. The tunability of intersubband transitions can be applied to optical modulators and various device applications based on the optical transitions of electrons.
Authors give a detailed procedure for the calculation of the linear and third-order nonlinear optical absorption in special asymmetric quantum wells. It is obtained an analytic formula for the optical absorption by the compact density matrix method and the iterative procedure. Finally, the numerical results are presented for typical GaAs/AlGaAs asymmetric quantum wells. The numerical results show that the incident optical intensity and the asymmetry of the quantum wells have great influences on the optical absorption.