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ACTA PHOTONICA SINICA

Calculation of Linear and Nonlinear Intersubband Optical Absorption in Electric-field Biased Hyperbolic Quantum Wells

Libing Chen

Published Jan 1, 2009• 0 citations
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Abstract

The analytic forms of the linear and the third-order nonlinear optical intersubband absorption coefficients were obtained for general asymmetric quantum well systems using the density matrix formalism.Based on the model,the linear and the third-order nonlinear intersubband optical absorptions in electric-field biased hyperbolic quantum wells were studied.The numerical results were presented for a typical AlxGa1-xAs/GaAs electric-field biased hyperbolic quantum wells.The results show that the contributors to the nonlinear absorption coefficient are due to the electric field,the shape of quantum well and the optical intensity.

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The analytic forms of the linear and the third-order nonlinear optical intersubband absorption coefficients were obtained for general asymmetric quantum well systems using the density matrix formalism.Based on the model,the linear and the third-order nonlinear intersubband optical absorptions in electric-field biased hyperbolic quantum wells were studied.The numerical results were presented for a typical AlxGa1-xAs/GaAs electric-field biased hyperbolic quantum wells.The results show that the contributors to the nonlinear absorption coefficient are due to the electric field,the shape of quantum well and the optical intensity.
By using the compact density matrix approach and iterative procedure, a detailed procedure for the calculation of the linear and nonlinear optical absorption coefficients was given in the electric-field-biased semi parabolic quantum wells(QWs). The simple analytical formulas for the linear and nonlinear optical absorption coefficients in the systems are also deduced. Numerical result on typical GaAs materials shows that,the linear and nonlinear optical absorption coefficients sensitively depend on the applied electric field and the confined potential frequency of the semiparabolic QWs systems as well as the incident optics beam intensity.
In the past few years advance in nanofabrication techniques have made it possible to make well-like compound semiconductor structures of low nanometer size.In these structures,the state of the electron in the direction perpendicular to the length of the well is quantized with sufficiently large separation in energy levels and the motion of the electron parallel to the length is that of a quasi-free electron.One of the most remarkable properties of these one-dimensional electron system is that the optical transitions between the size-quantized subbands are feasible.The result shows there is a large optical nonlinearities in asymmetric quantum wells.The problem of optical saturation of intersubband absorption has recently attracted considerable attention.The problem is very important to the development of superlattice devices such as fast infrared detectors and(modulators) because one needs to know the range of input optical intensities for which linear operation is(possible.) The analytical expression of the linear and the third-order nonlinear optical intersubband absorption coefficients are obtained in Pschl-Teller wells using the density matrix formalism taking into account the(intrasubband) relaxation.Since there are two adjustable parameters κ and λ in Pschl-Teller wells,the shapes of the wells will change with the change of the parameters κ and λ,accordingly the linear and the third-order nonlinear optical absorption coefficients will change with the parameters κ and λ.It is shown that the optical absorption coefficient depends on the parameter,and the optical intensity strongly. The absorption saturation will occur with I increase.Numerical results are presented for a typical AlGaAs/GaAs Pschl-Teller well.
Authors give a detailed procedure for the calculation of the linear and third-order nonlinear optical absorption in special asymmetric quantum wells. It is obtained an analytic formula for the optical absorption by the compact density matrix method and the iterative procedure. Finally, the numerical results are presented for typical GaAs/AlGaAs asymmetric quantum wells. The numerical results show that the incident optical intensity and the asymmetry of the quantum wells have great influences on the optical absorption.
In this paper, we investigate theoretically the effects of electric field on the linear and nonlinear optical properties of Morse quantum wells considering a two-level system. The effective mass approximation and the envelope function approach are used to calculate the energy levels and wave functions. The analytical expressions of the optical properties are obtained by using the compact density-matrix approach. The linear and third-order nonlinear optical absorption coefficients and the refractive index changes are investigated as a function of the incident photon energy for several configurations of the structural parameter and the applied electric field. Numerical results, presented for a typical GaAs/AlGaAs quantum well, reveal that the electric field has a significant effect on the optical characteristics of these structures and intersubband transitions can be modified by tuning the structural range parameter of the potential.
The optical rectification coefficient in electric-field biased hyperbolic quantum wells was studied. The analytic expression of optical rectification coefficient of this system is derived by means of density matrix approach and the iterative method. Finally, the numerical results were presented for a typical GaAs electric-field biased hyperbolic quantum wells. The results show that the optical rectification coefficient in this system is larger than that in bulk GaAs material and it will change with the change of the parameter a of the quantum well and the applied electric field F.