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Journal of Optoelectronics·laser

Linear and Nonlinear Optical Absorptions in Semiparabolic Quantum Wells

ZHANGLi, XIEHong-Jing

Published Jan 1, 2004• 0 citations
OpenAlex

Abstract

By using the compact density matrix approach and iterative procedure, a detailed procedure for the calculation of the linear and nonlinear optical absorption coefficients was given in the electric-field-biased semi parabolic quantum wells(QWs). The simple analytical formulas for the linear and nonlinear optical absorption coefficients in the systems are also deduced. Numerical result on typical GaAs materials shows that,the linear and nonlinear optical absorption coefficients sensitively depend on the applied electric field and the confined potential frequency of the semiparabolic QWs systems as well as the incident optics beam intensity.

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By using the compact density matrix approach and iterative procedure, a detailed procedure for the calculation of the linear and nonlinear optical absorption coefficients was given in the electric-field-biased semi parabolic quantum wells(QWs). The simple analytical formulas for the linear and nonlinear optical absorption coefficients in the systems are also deduced. Numerical result on typical GaAs materials shows that,the linear and nonlinear optical absorption coefficients sensitively depend on the applied electric field and the confined potential frequency of the semiparabolic QWs systems as well as the incident optics beam intensity.
Authors give a detailed procedure for the calculation of the linear and third-order nonlinear optical absorption in special asymmetric quantum wells. It is obtained an analytic formula for the optical absorption by the compact density matrix method and the iterative procedure. Finally, the numerical results are presented for typical GaAs/AlGaAs asymmetric quantum wells. The numerical results show that the incident optical intensity and the asymmetry of the quantum wells have great influences on the optical absorption.
In the present work, the optical properties of GaAs/AlGaAs semiparabolic quantum wells (QWs) are studied under the effect of applied electric field and magnetic field by using the compact-density-matrix method. The energy eigenvalues and their corresponding eigenfunctions of the system are calculated by using the differential method. Simultaneously, the nonlinear optical rectification (OR) and optical absorption coefficients (OACs) are investigated, which are modulated by the applied electric field and magnetic field. It is found that the position and the magnitude of the resonant peaks of the nonlinear OR and OACs can depend strongly on the applied electric field, magnetic field and confined potential frequencies. This gives a new way to control the device applications based on the intersubband transitions of electrons in this system.
The analytic forms of the linear and the third-order nonlinear optical intersubband absorption coefficients were obtained for general asymmetric quantum well systems using the density matrix formalism.Based on the model,the linear and the third-order nonlinear intersubband optical absorptions in electric-field biased hyperbolic quantum wells were studied.The numerical results were presented for a typical AlxGa1-xAs/GaAs electric-field biased hyperbolic quantum wells.The results show that the contributors to the nonlinear absorption coefficient are due to the electric field,the shape of quantum well and the optical intensity.
Abstract By using the displacement harmonic variant method and the compact density matrix approach, the linear and nonlinear intersubband refractive‐index changes (RICs) in a semiparabolic quantum well (QW) with an applied electric field have been investigated in detail. Simple analytical formulae for the linear and nonlinear RICs in the system were also deduced. The effect of the band nonparabolicity has been taken into account. Numerical calculations of typical GaAs semiparabolic QWs were performed. The dependence of the linear and nonlinear RICs on the incident optical intensity, the frequency of the confined potential of the semiparabolic quantum well, and the strength of the applied electric field were discussed under both conditions of considering and ignoring the band nonparabolicity. Results reveal that the RICs in the semiparabolic quantum‐well system sensitively depend on these factors. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
The refractive index changes near the absorption edge in semiparabolic quantum wells are examined as a function of the incident optical intensity, and an analytic formula for the changes in the refractive index is obtained by using the compact-density matrix approach and an iterative method. Numerical results are presented for some typical AlGaAs/GaAs quantum wells. The calculated results show that the incident optical intensity and the semiparabolic confinement frequency have a great influence on the total refractive index changes.
By using the compact density matrix approach and displacement harmonic variant and numerical calculation methods,the linear and nonlinear intersubband refractive index changes(RICs) in a semi-parabolic quantum well with applied electric field were investigated in detail.Numerical calculations on GaAs were performed for the dependence of RIC on the incident optical intensity,the frequency of confined potential of the semi-parabolic quantum well and the strength of applied electric field.Results reveal that the RICs in the semi-parabolic quantum well system sensitively depend on these factors.