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Journal of Optoelectronics·laser

Intersubband transition in an asymmetry quantum well under intense laser field

Gong Jian

Published Jan 1, 2010• 0 citations
OpenAlex

Abstract

The effect of the electric field and intense laser field on the intersubband transition and optical absorption in an Al0.3Ga0.7As/GaAs asymmetric double quantum well is theoretically investigated by using the transfer matrix approach.The Hartree potential due to the electron-electron interaction is considered in our calculation.For intersubband transitions in an asymmetric double quantum well,the peaks of the absorption coefficient are found to be a blue or red shifted by tuning the intensity of the laser field and the applied electric field.It can be concluded that the intense laser field and external electric field have a considerable influence on the electronic and optical properties for an asymmetric double quantum well.

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•Oct 7, 2022•0 citations
The effect of the electric field and intense laser field on the intersubband transition and optical absorption in an Al0.3Ga0.7As/GaAs asymmetric double quantum well is theoretically investigated by using the transfer matrix approach.The Hartree potential due to the electron-electron interaction is considered in our calculation.For intersubband transitions in an asymmetric double quantum well,the peaks of the absorption coefficient are found to be a blue or red shifted by tuning the intensity of the laser field and the applied electric field.It can be concluded that the intense laser field and external electric field have a considerable influence on the electronic and optical properties for an asymmetric double quantum well.
This numerical study scrutinizes the impact of both the thickness of layers and an externally applied magnetic field on the optical absorption coefficient and alterations in the refractive index pertaining to the intersubband optical transition (1-2) within an asymmetric double parabolic structure, utilizing GaAs/AlGaAs quantum wells as a basis.Energy levels and their corresponding wave functions have been ascertained through the use of the shooting method.The findings of this investigation suggest a pronounced sensitivity of the optical absorption coefficient and changes in the refractive index to the thickness of the layers and the applied external magnetic field.It has been observed that the intensification of the magnetic field results in a resonant peak position shifting towards higher energy values, whereas the thickness of the layers exerts an influence on the resonance peak magnitude.The insights derived from this study hold considerable potential for application, particularly in the development of optical devices predicated on intersubband electronic transitions.
In this study, the effects of external electric, magnetic, and non-resonant intense laser fields on the optical absorption properties of a GaAs/Al0.30Ga0.70As single quantum well were theoretically investigated. The electronic structure was obtained by solving the one-dimensional Schrödinger equation within the effective mass approximation using the finite difference method, and the transition energy, dipole matrix element, and linear optical absorption spectra were compared under different field conditions. The results show that electric and magnetic fields produce limited but systematic shifts in the optical absorption resonance. In contrast, the non-resonant intense laser field modifies the effective well potential and leads to a more pronounced and nonmonotonic change in the transition energy and absorption spectrum. Under combined-field conditions, the optical resonance can be tuned depending on the applied field parameters. These findings indicate that the optical absorption response of GaAs/Al0.30Ga0.70As quantum wells can be controllably modified by external fields and that the investigated structure provides a theoretically meaningful model for field-controlled optoelectronic applications.
Electric field influences on the electronic states and the optical absorption in an asymmetrical quantum well with semiparabolic potential are investigated. The formula for the absorption coefficients in this asymmetrical quantum well with electric field are deduced by applying iterative method and density-matrix approach. The results are discussed with GaAs/AlGaAs materials and show that the external electric field has a significant effect on the electronic states and absorption coefficients of asymmetric quantum wells.
Abstractauthoren This paper investigates the effects of an intense laser field and electric field on the optical properties of quantum well represented by Morse potential. The non-resonant, high-frequency intense laser effects upon the system are treated within the framework of non-perturbative approach, modifying the confinement potential associated to the heterostructure. The analytical expressions of the linear and third-order nonlinear optical absorption coefficients and refractive index changes are obtained by using the compact-density matrix formalism. The results for a typical GaAs quantum well correspond to several configurations of the structural parameter, the strengths of the intense laser radiation, and the static electric field. Numerical results reveal the striking influence of the external fields on the magnitude and resonant peak energy positions of the optical absorption coefficients and refractive index changes. Besides, the control of intersubband optical transitions by the structure parameter seems feasible.
The intersubband optical absorption coefficients and the refractive index change depending on the intense laser field (ILF); both are calculated in a square quantum well (SQW) and a graded quantum well (GQW). Our results show that the position and the magnitude of the linear, nonlinear and total absorption coefficients and refractive index changes depend on the laser field parameter and the quantum well (QW) shape. By increasing the ILF value, we can obtain a red shift or a blue shift in the intersubband optical transitions as dependent on the shape of the QW. For the SQW, the intersubband absorption spectrum shows a blue shift up to the critical laser field value. This spectrum shows a red shift for ILF values larger than this certain value. For the GQW, the intersubband absorption spectrum shows a red shift by increasing the ILF. Thus the absorption coefficients and the refractive index changes, which can be suitable for great performance optical modulators and multiple infrared optical device applications, can be easily obtained by tuning the ILF value and the QW shape.
Abstract Linear, nonlinear and total optical absorption coefficients and relative refractive index changes for both symmetric and asymmetric double V-shaped quantum well configurations formed within AlxGa1-xAs/GaAs heterostructure are theoretically investigated. Responses of these coefficients to well widths, barrier widths and concentration of aluminum within the barrier as well as applied external electromagnetic fields are the subject of this study. The electronic spectra of the structures are obtained as a solution of Schrödinger equation with relevant potential and external agents in the framework of effective mass and envelope wave function approximations. The optical properties are calculated via the analytical expressions obtained by iterative solutions within compact density matrix approach. Although increasing barrier width and aluminum concentration act similar significant red shifting on the referred coefficients for both symmetric and asymmetric double V-shaped wells, the varying well widths acts differently for each configuration. Widening both wells in symmetric case moves the resonance peaks to lower energies, while the rise on only one well carries the resonance peaks to higher energies for asymmetric case. Enhancing both the electric and magnetic fields shift the resonance peaks to the blue for symmetric and also asymmetric wells. High dependency of the optical properties to the structural parameters and external electromagnetic fields as well as asymmetry of the wells is presented here in detail.