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GaAs/Al0.30Ga0.70As Kuantum Kuyusunda Optik Soğurmanın Alanla Kontrolü

Didem Altun

Published May 3, 2026• 0 citations
OpenAlex

Abstract

In this study, the effects of external electric, magnetic, and non-resonant intense laser fields on the optical absorption properties of a GaAs/Al0.30Ga0.70As single quantum well were theoretically investigated. The electronic structure was obtained by solving the one-dimensional Schrödinger equation within the effective mass approximation using the finite difference method, and the transition energy, dipole matrix element, and linear optical absorption spectra were compared under different field conditions. The results show that electric and magnetic fields produce limited but systematic shifts in the optical absorption resonance. In contrast, the non-resonant intense laser field modifies the effective well potential and leads to a more pronounced and nonmonotonic change in the transition energy and absorption spectrum. Under combined-field conditions, the optical resonance can be tuned depending on the applied field parameters. These findings indicate that the optical absorption response of GaAs/Al0.30Ga0.70As quantum wells can be controllably modified by external fields and that the investigated structure provides a theoretically meaningful model for field-controlled optoelectronic applications.

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In this study, the effects of external electric, magnetic, and non-resonant intense laser fields on the optical absorption properties of a GaAs/Al0.30Ga0.70As single quantum well were theoretically investigated. The electronic structure was obtained by solving the one-dimensional Schrödinger equation within the effective mass approximation using the finite difference method, and the transition energy, dipole matrix element, and linear optical absorption spectra were compared under different field conditions. The results show that electric and magnetic fields produce limited but systematic shifts in the optical absorption resonance. In contrast, the non-resonant intense laser field modifies the effective well potential and leads to a more pronounced and nonmonotonic change in the transition energy and absorption spectrum. Under combined-field conditions, the optical resonance can be tuned depending on the applied field parameters. These findings indicate that the optical absorption response of GaAs/Al0.30Ga0.70As quantum wells can be controllably modified by external fields and that the investigated structure provides a theoretically meaningful model for field-controlled optoelectronic applications.
In this study, the resonant peaks of the linear optical absorption (OA) and rectification coefficients in GaAs/GaAlAs quantum well are calculated as dependent on the applied electric field (F), the magnetic field (B) and the laser field intensity parameter (α0). Our results show that the shape of confined potential profile, the energy levels and the dipole moment matrix elements are changed as dependent on the F, B and α0. Also, the resonant peaks of the OA and rectification coefficients depend on the applied external field effects. Therefore, the variation of the resonant peaks of these coefficients which can be appropriate for various optical modulators and infrared optical device applications can be smoothly obtained by the alteration electric, magnetic and intense laser field.
In this study, the effects of the external fields (electric and tilted magnetic fields) and well parameters on the optical absorption coefficients in GaAs/GaAlAs multiple (five) quantum wells under the applied electric and tilted magnetic fields has been investigated theoretically. Firstly, the energy eigenvalues and eigen functions of an electron confined in multiple quantum wells are calculated by analytically from Schrödinger equation using the transfer matrix method within the effective mass approximation, Secondly, the linear, nonlinear and total intersubband optical absorptions in GaAs/GaAlAs multiple quantum wells system are studied within the compact density-matrix approach. It is shown that the parameters such as strenghts of the external fields and θ-tilted angle values not only shift the peak positions in absorption spectrum but also considerably modify their potential heights. In generally, electronic and optical properties of the quantum wells are very sensitive to the applied external fields and well parameters. Therefore, we can conclude that the effect of the external fields can be used to tune and control the optical properties of interest in the range of the far-infrared electromagnetic spectrum.
Abstract In our investigation, we analyzed the variations in both linear and nonlinear optical properties of the GaAs/GaAlAs single quantum well heterostructure with modified Lennard-Jones potential under the conditions where external fields and the adjustable physical parameters of the structure are changed. We get the solution of the Schrödinger equation for identifying the subband energy levels with their wave functions taking advantage of the diagonalization method, effective mass approach, and parabolic band model. As a result, we find that the changes in the applied external fields and structure parameters have effects on the total optical absorption coefficients and total relative refractive index changes. While the optical response becomes red-shifted with the increment of applied electric, magnetic and intense laser fields and the well width, it becomes blue-shifted with the increment of the well depth.
Abstract In this present study, the effects of electric, magnetic, and non-resonant intense laser field (ILF) on the linear, third-order nonlinear, and total optical absorption coefficients (TOACs) and relative refractive index changes (RRICs) of GaAs quantum well, having Hulthen confinement potential, were theoretically investigated. In addition, the dependence of the nonlinear optical properties in the structure on the optical intensity of incident photon and the inverse relaxation time was also calculated. To do this research, firstly the energy eigenvalues and eigenfunctions of the structure were calculated by using the effective mass and envelope function approaches. By using these calculated subband energy levels and wave functions belonging to these levels, the nonlinear optical properties of the system were obtained via the iterative method, within the compact density matrix approach framework. The obtained numerical results show that the optical properties of the considered system depend on the externally applied fields. With the applied external electric and magnetic field, the peak positions of TOACs and RRICs shift to higher energies, and the peak magnitudes increase. The high-frequency ILF applied to the structure shifts the peak positions of TOACs and RRICs initially towards higher energies and then towards lower energies and their peak sizes increase. These results show that the optical properties of the system can be adjusted purposively by changing the magnitude of applied external fields.
External fields modify the confinement potential and electronic structure in a multiple quantum well system, affecting the light–matter interaction. Here, we present a theoretical study of the modulation of the nonlinear optical response simultaneously employing an intense non-resonant laser field and an electric field. Considering four occupied subbands, we focus on a GaAs/AlGaAs symmetric multiple quantum well system with five wells and six barriers. By solving the Schrödinger equation through the finite element method under the effective mass approximation, we determine the electronic structure and the nonlinear optical response using the density matrix formalism. The laser field dresses the confinement potential while the electric field breaks the inversion symmetry. The combined effect of both fields modifies the intersubband transition energies and the overlap of the wave functions. The results obtained demonstrate an active tunability of the nonlinear optical response, opening up the possibility of designing optoelectronic devices with tunable optical properties.
The effect of the electric field and intense laser field on the intersubband transition and optical absorption in an Al0.3Ga0.7As/GaAs asymmetric double quantum well is theoretically investigated by using the transfer matrix approach.The Hartree potential due to the electron-electron interaction is considered in our calculation.For intersubband transitions in an asymmetric double quantum well,the peaks of the absorption coefficient are found to be a blue or red shifted by tuning the intensity of the laser field and the applied electric field.It can be concluded that the intense laser field and external electric field have a considerable influence on the electronic and optical properties for an asymmetric double quantum well.