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Physics

Electro-Optical Modulation of the Nonlinear Optical Response in a GaAs/AlGaAs Symmetric Multiple Quantum Well System

C. A. Dagua-Conda, John A. Gil-Corrales, R. V. H. Hahn, Miguel Eduardo Mora-Ramos, Alvaro Luis Morales, C.A. Duque

Published Jun 12, 2025• 10 citations
Publisher

Abstract

External fields modify the confinement potential and electronic structure in a multiple quantum well system, affecting the light–matter interaction. Here, we present a theoretical study of the modulation of the nonlinear optical response simultaneously employing an intense non-resonant laser field and an electric field. Considering four occupied subbands, we focus on a GaAs/AlGaAs symmetric multiple quantum well system with five wells and six barriers. By solving the Schrödinger equation through the finite element method under the effective mass approximation, we determine the electronic structure and the nonlinear optical response using the density matrix formalism. The laser field dresses the confinement potential while the electric field breaks the inversion symmetry. The combined effect of both fields modifies the intersubband transition energies and the overlap of the wave functions. The results obtained demonstrate an active tunability of the nonlinear optical response, opening up the possibility of designing optoelectronic devices with tunable optical properties.

DOI
10.3390/physics7020022

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External fields modify the confinement potential and electronic structure in a multiple quantum well system, affecting the light–matter interaction. Here, we present a theoretical study of the modulation of the nonlinear optical response simultaneously employing an intense non-resonant laser field and an electric field. Considering four occupied subbands, we focus on a GaAs/AlGaAs symmetric multiple quantum well system with five wells and six barriers. By solving the Schrödinger equation through the finite element method under the effective mass approximation, we determine the electronic structure and the nonlinear optical response using the density matrix formalism. The laser field dresses the confinement potential while the electric field breaks the inversion symmetry. The combined effect of both fields modifies the intersubband transition energies and the overlap of the wave functions. The results obtained demonstrate an active tunability of the nonlinear optical response, opening up the possibility of designing optoelectronic devices with tunable optical properties.
In this study, the effects of the external fields (electric and tilted magnetic fields) and well parameters on the optical absorption coefficients in GaAs/GaAlAs multiple (five) quantum wells under the applied electric and tilted magnetic fields has been investigated theoretically. Firstly, the energy eigenvalues and eigen functions of an electron confined in multiple quantum wells are calculated by analytically from Schrödinger equation using the transfer matrix method within the effective mass approximation, Secondly, the linear, nonlinear and total intersubband optical absorptions in GaAs/GaAlAs multiple quantum wells system are studied within the compact density-matrix approach. It is shown that the parameters such as strenghts of the external fields and θ-tilted angle values not only shift the peak positions in absorption spectrum but also considerably modify their potential heights. In generally, electronic and optical properties of the quantum wells are very sensitive to the applied external fields and well parameters. Therefore, we can conclude that the effect of the external fields can be used to tune and control the optical properties of interest in the range of the far-infrared electromagnetic spectrum.
Abstract In this paper, the effects of external electric, magnetic and non-resonant intense laser fields on the nonlinear optical rectification (NOR), second-harmonic (SH), and third-harmonic (TH) generation in a GaAs quantum well with asymmetrical Gaussian potential are theoretically investigated. Firstly, the energy eigenvalues and eigenfunctions of a single electron confined in the structure are obtained by using the diagonalization method within the framework of the effective-mass and parabolic band approaches. Then, using these energy eigenvalues and eigenfunctions, expressions derived within the compact density matrix approximation has been employed to calculate the coefficients of the nonlinear optical response in the structure. The obtained simulation results show that the influence of the external fields leads to significant changes in the coefficients of nonlinear optical rectification, second and third harmonic generation in the system. As a result, it has been seen that the amplitude and position of the peaks of nonlinear optical rectification, second and third harmonic coefficients can be controlled by changing the applied external fields.
A detailed theoretical study on the electron-related optical responses in triple δ-doped GaAs quantum wells in the presence of non-resonant, monochromatic intense laser field is presented. For this purpose, we first obtained the bound subband energy levels and their corresponding envelope wave functions of the structure for different central doping concentrations within the effective-mass approximation. Then, we calculate the effect of the non-resonant intense laser field on the optical properties of this structure using the compact-density-matrix approach via the iterative method. We found that the optical absorption coefficients and refractive index changes in the triple δ-doped GaAs quantum well can be modulated by changing the central doping concentration and the intensity of the non-resonant, monochromatic laser field. In addition, it is shown that a sufficiently intense laser field suppresses the multiple quantum well configuration towards a single potential well one and the optical response becomes practically independent of the δ-doping concentration.
Abstractauthoren This paper investigates the effects of an intense laser field and electric field on the optical properties of quantum well represented by Morse potential. The non-resonant, high-frequency intense laser effects upon the system are treated within the framework of non-perturbative approach, modifying the confinement potential associated to the heterostructure. The analytical expressions of the linear and third-order nonlinear optical absorption coefficients and refractive index changes are obtained by using the compact-density matrix formalism. The results for a typical GaAs quantum well correspond to several configurations of the structural parameter, the strengths of the intense laser radiation, and the static electric field. Numerical results reveal the striking influence of the external fields on the magnitude and resonant peak energy positions of the optical absorption coefficients and refractive index changes. Besides, the control of intersubband optical transitions by the structure parameter seems feasible.
We study the linear and nonlinear optical response of intersubband transitions in a semiconductor quantum well. We describe the coupling of the quantum well structure with the electromagnetic field by using the nonlinear density matrix equations, in the two-subband approximation. We provide proper approximate analytical solutions to these equations that are used for the closed-form determination of the optical susceptibilities χ(1), χ(3), and χ(5). We also explore the dependence of χ(1), χ(3), and χ(5) on the electron sheet density for a specific double GaAs/AlGaAs quantum well.
In this work, the effects of the structure parameters, such as the central barrier thickness and the aluminium concentrations x, on the linear and nonlinear intersubband optical absorption coefficients and refractive index changes of the asymmetric double-graded quantum wells (ADGQWs) under the presence of an external static electric field are studied theoretically. The nonlinear optical properties of the ADGQWs are obtained using the compact-density matrix approach and iterative method. The numerical results obtained from the present work show that the external static electric field and the structure parameters play an important role in the optical properties of ADGQWs. Depending on the asymmetric nature of the confinement potential, in an electric field of kV/cm, the overlap between electronic wave functions decreases with increasing field whereas it increases for larger field values. The tunability of intersubband transitions can be applied to optical modulators and various device applications based on the optical transitions of electrons.