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The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics

Electron-related optical responses in triple δ -doped quantum wells

Fatih Ungan, Miguel Eduardo Mora-Ramos, Esin KASAPOĞLU, H. Sarı, İ. Sökmen

Published Nov 25, 2018• 10 citations
Publisher

Abstract

A detailed theoretical study on the electron-related optical responses in triple δ-doped GaAs quantum wells in the presence of non-resonant, monochromatic intense laser field is presented. For this purpose, we first obtained the bound subband energy levels and their corresponding envelope wave functions of the structure for different central doping concentrations within the effective-mass approximation. Then, we calculate the effect of the non-resonant intense laser field on the optical properties of this structure using the compact-density-matrix approach via the iterative method. We found that the optical absorption coefficients and refractive index changes in the triple δ-doped GaAs quantum well can be modulated by changing the central doping concentration and the intensity of the non-resonant, monochromatic laser field. In addition, it is shown that a sufficiently intense laser field suppresses the multiple quantum well configuration towards a single potential well one and the optical response becomes practically independent of the δ-doping concentration.

DOI
10.1080/14786435.2018.1549370

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In the present paper, the linear and non-linear optical properties of GaAs/AlGaAs multiple quantum well with on-center and on-edge delta doping are studied within the effective mass approximation. The delta potential is analytically modeled within each quantum well potential to obtain the energy levels and the corresponding wave functions using the robust finite difference method. The linear and non-linear optical absorption coefficients and changes in the refractive index are studied in the presence of a static magnetic and a periodic laser field using the density matrix approach. The obtained results show that the position of resonances and the amplitude of the optical absorption coefficients and the refractive index changes can be modified by varying the magnetic field and strength and position of doping potential. Lastly, an increase of the optical intensity appreciably changes the total absorption coefficient, as well as the total refractive index changes. Obtained results are important for the design of various electronic components such as high-power FETs and infrared photonic devices based on the intersubband transition of electrons in δ-doped multiple quantum wells.
In the present paper, the linear and non-linear optical properties of GaAs/AlGaAs with on-center and on-edge delta doping are studied within the effective mass approximation. The delta potential is analytically modeled within each quantum well potential to obtain the energy levels and the corresponding wave functions using the robust finite difference method. The linear and non-linear optical absorption coefficients and changes in the refractive index are studied in the presence of a static magnetic and a periodic laser field using the density matrix approach. The obtained results show that the position of resonances and the amplitude of the optical absorption coefficients and the refractive index changes can be modified by varying the magnetic field and strength and position of doping potential. Lastly, an increase of the optical intensity appreciably changes the total absorption coefficient, as well as the total refractive index changes. Obtained results are important for the design of various electronic components such as high-power FETs and infrared photonic devices based on the intersubband transition of electrons in δ-doped MQWs.
Abstract In this study, we thoroughly investigate the impacts of hydrostatic pressure, temperature, and position-dependent mass (PDM) on the nonlinear optical properties of asymmetric triple δ-doped GaAs quantum wells. Our analysis covers total optical absorption coefficients, relative refractive index changes, nonlinear optical rectification, second harmonic generation, and third harmonic generation. Initially, we employ PDM to solve the time-independent Schrödinger equation using the diagonalization method under effective mass and parabolic band approaches, considering pressure and temperature dependencies. Utilizing the first four energy eigenvalues and eigenfunctions, we apply the compact density matrix method to compute the system’s nonlinear optical properties numerically. The results indicate a shift in optical property peak positions toward lower (higher) energy spectra with increasing hydrostatic pressure (temperature). Furthermore, the influence of PDM shifts the system’s optical properties toward the higher energy spectrum, resembling the effect of temperature. From an experimental and theoretical perspective, one of the topics that researchers work on most is GaAs-based δ-doped systems (δ-doped heterojunction bipolar transistors, δ-doped field effect transistors, δ-multiple independent gate field effect transistors, etc.). We believe these findings will provide valuable insights for the researchers involved in GaAs-based δ-doped optoelectronic device design.
External fields modify the confinement potential and electronic structure in a multiple quantum well system, affecting the light–matter interaction. Here, we present a theoretical study of the modulation of the nonlinear optical response simultaneously employing an intense non-resonant laser field and an electric field. Considering four occupied subbands, we focus on a GaAs/AlGaAs symmetric multiple quantum well system with five wells and six barriers. By solving the Schrödinger equation through the finite element method under the effective mass approximation, we determine the electronic structure and the nonlinear optical response using the density matrix formalism. The laser field dresses the confinement potential while the electric field breaks the inversion symmetry. The combined effect of both fields modifies the intersubband transition energies and the overlap of the wave functions. The results obtained demonstrate an active tunability of the nonlinear optical response, opening up the possibility of designing optoelectronic devices with tunable optical properties.
Abstractauthoren This paper investigates the effects of an intense laser field and electric field on the optical properties of quantum well represented by Morse potential. The non-resonant, high-frequency intense laser effects upon the system are treated within the framework of non-perturbative approach, modifying the confinement potential associated to the heterostructure. The analytical expressions of the linear and third-order nonlinear optical absorption coefficients and refractive index changes are obtained by using the compact-density matrix formalism. The results for a typical GaAs quantum well correspond to several configurations of the structural parameter, the strengths of the intense laser radiation, and the static electric field. Numerical results reveal the striking influence of the external fields on the magnitude and resonant peak energy positions of the optical absorption coefficients and refractive index changes. Besides, the control of intersubband optical transitions by the structure parameter seems feasible.
Abstract In this present study, the effects of electric, magnetic, and non-resonant intense laser field (ILF) on the linear, third-order nonlinear, and total optical absorption coefficients (TOACs) and relative refractive index changes (RRICs) of GaAs quantum well, having Hulthen confinement potential, were theoretically investigated. In addition, the dependence of the nonlinear optical properties in the structure on the optical intensity of incident photon and the inverse relaxation time was also calculated. To do this research, firstly the energy eigenvalues and eigenfunctions of the structure were calculated by using the effective mass and envelope function approaches. By using these calculated subband energy levels and wave functions belonging to these levels, the nonlinear optical properties of the system were obtained via the iterative method, within the compact density matrix approach framework. The obtained numerical results show that the optical properties of the considered system depend on the externally applied fields. With the applied external electric and magnetic field, the peak positions of TOACs and RRICs shift to higher energies, and the peak magnitudes increase. The high-frequency ILF applied to the structure shifts the peak positions of TOACs and RRICs initially towards higher energies and then towards lower energies and their peak sizes increase. These results show that the optical properties of the system can be adjusted purposively by changing the magnitude of applied external fields.