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Revista Mexicana de Física

Study of non-linear optical properties of center and edge delta-doped multiple quantum wells

Monica Gambhir, Vinod Prasad

Published Aug 31, 2018• 9 citations
Publisher

Abstract

In the present paper, the linear and non-linear optical properties of GaAs/AlGaAs multiple quantum well with on-center and on-edge delta doping are studied within the effective mass approximation. The delta potential is analytically modeled within each quantum well potential to obtain the energy levels and the corresponding wave functions using the robust finite difference method. The linear and non-linear optical absorption coefficients and changes in the refractive index are studied in the presence of a static magnetic and a periodic laser field using the density matrix approach. The obtained results show that the position of resonances and the amplitude of the optical absorption coefficients and the refractive index changes can be modified by varying the magnetic field and strength and position of doping potential. Lastly, an increase of the optical intensity appreciably changes the total absorption coefficient, as well as the total refractive index changes. Obtained results are important for the design of various electronic components such as high-power FETs and infrared photonic devices based on the intersubband transition of electrons in δ-doped multiple quantum wells.

DOI
10.31349/revmexfis.64.439

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In the present paper, the linear and non-linear optical properties of GaAs/AlGaAs multiple quantum well with on-center and on-edge delta doping are studied within the effective mass approximation. The delta potential is analytically modeled within each quantum well potential to obtain the energy levels and the corresponding wave functions using the robust finite difference method. The linear and non-linear optical absorption coefficients and changes in the refractive index are studied in the presence of a static magnetic and a periodic laser field using the density matrix approach. The obtained results show that the position of resonances and the amplitude of the optical absorption coefficients and the refractive index changes can be modified by varying the magnetic field and strength and position of doping potential. Lastly, an increase of the optical intensity appreciably changes the total absorption coefficient, as well as the total refractive index changes. Obtained results are important for the design of various electronic components such as high-power FETs and infrared photonic devices based on the intersubband transition of electrons in δ-doped multiple quantum wells.
In the present paper, the linear and non-linear optical properties of GaAs/AlGaAs with on-center and on-edge delta doping are studied within the effective mass approximation. The delta potential is analytically modeled within each quantum well potential to obtain the energy levels and the corresponding wave functions using the robust finite difference method. The linear and non-linear optical absorption coefficients and changes in the refractive index are studied in the presence of a static magnetic and a periodic laser field using the density matrix approach. The obtained results show that the position of resonances and the amplitude of the optical absorption coefficients and the refractive index changes can be modified by varying the magnetic field and strength and position of doping potential. Lastly, an increase of the optical intensity appreciably changes the total absorption coefficient, as well as the total refractive index changes. Obtained results are important for the design of various electronic components such as high-power FETs and infrared photonic devices based on the intersubband transition of electrons in δ-doped MQWs.
A detailed theoretical study on the electron-related optical responses in triple δ-doped GaAs quantum wells in the presence of non-resonant, monochromatic intense laser field is presented. For this purpose, we first obtained the bound subband energy levels and their corresponding envelope wave functions of the structure for different central doping concentrations within the effective-mass approximation. Then, we calculate the effect of the non-resonant intense laser field on the optical properties of this structure using the compact-density-matrix approach via the iterative method. We found that the optical absorption coefficients and refractive index changes in the triple δ-doped GaAs quantum well can be modulated by changing the central doping concentration and the intensity of the non-resonant, monochromatic laser field. In addition, it is shown that a sufficiently intense laser field suppresses the multiple quantum well configuration towards a single potential well one and the optical response becomes practically independent of the δ-doping concentration.
Optical properties of quantum well nanostructure for typical GaAs/AlxGa1-xAs are investigated in a new approach. By using the point canonical transformation method and numerical solution of the Schrödinger equation, the energy levels and wave functions of electrons in the quantum well confinement potential are calculated. Then, the effect of position-dependent effective mass on the intersubband optical absorption coefficient and the refractive index changes of the quantum well calculated by compact density matrix method, are studied. Results are compared with the case of constant mass. Our results show that with considering spatially varying electron effective mass linear and nonlinear optical properties increases and shifts toward the lower energies. Researches on this matter open a new field in fundamental and applied physics, and also offer a wide range of potential applications for photonic devices.
Simultaneous effects of an on-center hydrogenic impurity and band edge non-parabolicity on intersubband optical absorption coefficients and refractive index changes of a typical GaAs/Al x Ga 1−x As spherical quantum dot are theoretically investigated, using the Luttinger—Kohn effective mass equation. So, electronic structure and optical properties of the system are studied by means of the matrix diagonalization technique and compact density matrix approach, respectively. Finally, effects of an impurity, band edge non-parabolicity, incident light intensity and the dot size on the linear, the third-order nonlinear and the total optical absorption coefficients and refractive index changes are investigated. Our results indicate that, the magnitudes of these optical quantities increase and their peaks shift to higher energies as the influences of the impurity and the band edge non-parabolicity are considered. Moreover, incident light intensity and the dot size have considerable effects on the optical absorption coefficients and refractive index changes.
In this paper, we investigate theoretically the effects of electric field on the linear and nonlinear optical properties of Morse quantum wells considering a two-level system. The effective mass approximation and the envelope function approach are used to calculate the energy levels and wave functions. The analytical expressions of the optical properties are obtained by using the compact density-matrix approach. The linear and third-order nonlinear optical absorption coefficients and the refractive index changes are investigated as a function of the incident photon energy for several configurations of the structural parameter and the applied electric field. Numerical results, presented for a typical GaAs/AlGaAs quantum well, reveal that the electric field has a significant effect on the optical characteristics of these structures and intersubband transitions can be modified by tuning the structural range parameter of the potential.
In this study, the effects of the external fields (electric and tilted magnetic fields) and well parameters on the optical absorption coefficients in GaAs/GaAlAs multiple (five) quantum wells under the applied electric and tilted magnetic fields has been investigated theoretically. Firstly, the energy eigenvalues and eigen functions of an electron confined in multiple quantum wells are calculated by analytically from Schrödinger equation using the transfer matrix method within the effective mass approximation, Secondly, the linear, nonlinear and total intersubband optical absorptions in GaAs/GaAlAs multiple quantum wells system are studied within the compact density-matrix approach. It is shown that the parameters such as strenghts of the external fields and θ-tilted angle values not only shift the peak positions in absorption spectrum but also considerably modify their potential heights. In generally, electronic and optical properties of the quantum wells are very sensitive to the applied external fields and well parameters. Therefore, we can conclude that the effect of the external fields can be used to tune and control the optical properties of interest in the range of the far-infrared electromagnetic spectrum.