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Optical and Quantum Electronics

Intensity-dependent nonlinear optical properties in an asymmetric Gaussian potential quantum well-modulated by external fields

M. Sayrac, A. Türkoğlu, Miguel Eduardo Mora-Ramos, Fatih Ungan

Published Aug 13, 2021• 20 citations
Publisher

Abstract

Abstract In this paper, the effects of external electric, magnetic and non-resonant intense laser fields on the nonlinear optical rectification (NOR), second-harmonic (SH), and third-harmonic (TH) generation in a GaAs quantum well with asymmetrical Gaussian potential are theoretically investigated. Firstly, the energy eigenvalues and eigenfunctions of a single electron confined in the structure are obtained by using the diagonalization method within the framework of the effective-mass and parabolic band approaches. Then, using these energy eigenvalues and eigenfunctions, expressions derived within the compact density matrix approximation has been employed to calculate the coefficients of the nonlinear optical response in the structure. The obtained simulation results show that the influence of the external fields leads to significant changes in the coefficients of nonlinear optical rectification, second and third harmonic generation in the system. As a result, it has been seen that the amplitude and position of the peaks of nonlinear optical rectification, second and third harmonic coefficients can be controlled by changing the applied external fields.

DOI
10.1007/s11082-021-03136-y

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•Nov 4, 2016•0 citations
Abstract In this paper, the effects of external electric, magnetic and non-resonant intense laser fields on the nonlinear optical rectification (NOR), second-harmonic (SH), and third-harmonic (TH) generation in a GaAs quantum well with asymmetrical Gaussian potential are theoretically investigated. Firstly, the energy eigenvalues and eigenfunctions of a single electron confined in the structure are obtained by using the diagonalization method within the framework of the effective-mass and parabolic band approaches. Then, using these energy eigenvalues and eigenfunctions, expressions derived within the compact density matrix approximation has been employed to calculate the coefficients of the nonlinear optical response in the structure. The obtained simulation results show that the influence of the external fields leads to significant changes in the coefficients of nonlinear optical rectification, second and third harmonic generation in the system. As a result, it has been seen that the amplitude and position of the peaks of nonlinear optical rectification, second and third harmonic coefficients can be controlled by changing the applied external fields.
Abstract In this present study, the effects of electric, magnetic, and non-resonant intense laser field (ILF) on the linear, third-order nonlinear, and total optical absorption coefficients (TOACs) and relative refractive index changes (RRICs) of GaAs quantum well, having Hulthen confinement potential, were theoretically investigated. In addition, the dependence of the nonlinear optical properties in the structure on the optical intensity of incident photon and the inverse relaxation time was also calculated. To do this research, firstly the energy eigenvalues and eigenfunctions of the structure were calculated by using the effective mass and envelope function approaches. By using these calculated subband energy levels and wave functions belonging to these levels, the nonlinear optical properties of the system were obtained via the iterative method, within the compact density matrix approach framework. The obtained numerical results show that the optical properties of the considered system depend on the externally applied fields. With the applied external electric and magnetic field, the peak positions of TOACs and RRICs shift to higher energies, and the peak magnitudes increase. The high-frequency ILF applied to the structure shifts the peak positions of TOACs and RRICs initially towards higher energies and then towards lower energies and their peak sizes increase. These results show that the optical properties of the system can be adjusted purposively by changing the magnitude of applied external fields.
The effects of a static electric field on the nonlinear optical rectification, second- and third-harmonic generation in a quantum well described by Morse potential are theoretically investigated. Analytical expressions for the optical coefficients due to intersubband optical transitions with an applied electric field are extracted from the compact-density matrix approach and iterative scheme. Numerical results presented for a typical GaAs quantum well reveal the feasibility of control of optical transitions between the size-quantized subbands. In addition, we have to emphasize the fact that the optical response of the system is remarkably sensitive to the electric field and structural range parameter.
Abstractauthoren This paper investigates the effects of an intense laser field and electric field on the optical properties of quantum well represented by Morse potential. The non-resonant, high-frequency intense laser effects upon the system are treated within the framework of non-perturbative approach, modifying the confinement potential associated to the heterostructure. The analytical expressions of the linear and third-order nonlinear optical absorption coefficients and refractive index changes are obtained by using the compact-density matrix formalism. The results for a typical GaAs quantum well correspond to several configurations of the structural parameter, the strengths of the intense laser radiation, and the static electric field. Numerical results reveal the striking influence of the external fields on the magnitude and resonant peak energy positions of the optical absorption coefficients and refractive index changes. Besides, the control of intersubband optical transitions by the structure parameter seems feasible.
Abstract In this theoretical work, we investigate how external fields like as electric, magnetic, and intense laser fields, as well as structural factors, affect the third harmonic generation (THG) coefficient of an AlGaAs/GaAs Manning-like double quantum well heterostructure. To achieve our goals, we numerically solve the time-independent Schrödinger equation using the diagonalization approach with the effective mass approximation and then derive the subband energy levels and corresponding wave functions of the structure. After that, we derive the mathematical expression of the THG coefficient by using the compact density matrix method. According to our results, the resonance peaks of the THG coefficient show shifting to the high-energy region with an increase in the field’s magnitude in cases where external fields (electric, magnetic, and intense laser) are applied separately. At the same time, increasing the depth (width) of the quantum well structure causes the THG peaks to shift to the high (low) energy region. We believe that the findings from this search will have a substantial impact on existing experimental device designs and applications.
Abstract . In this study, the effects of a non-resonant intense laser field and the Al-concentration on the optical rectification, second and third harmonic generation in asymmetric double quantum well are investigated within the compact density matrix approach theoretically. The results show that the intense laser field and the Al-concentration lead to significant changes in the coefficients of nonlinear optical rectification, second and third harmonic generations. Keywords: Asymmetric double quantum well, Nonlinear optical rectification, Second and third harmonic generations, Intense laser field Ozet. Bu calismada, asimetrik cift kuantum kuyusunun dogrusal olmayan optik duzeltme, ikinci ve ucuncu harmonikleri uzerine Al-konsantrasyonu ve rezonans olmayan yogun lazer alaninin etkisi kompakt yogunluk matris yaklasimi kullanilarak teorik olarak incelenmistir. Sonuclar, yogun lazer alani ve Al-konsantrasyonun dogrusal olmayan optik duzeltme, ikinci ve ucuncu harmonikler uzerine onemli degismelere neden oldugunu gostermektedir.
. In this study, the effects of a non-resonant intense laser field and the Al-concentration on the optical rectification, second and third harmonic generation in asymmetric double quantum well are investigated within the compact density matrix approach theoretically. The results show that the intense laser field and the Al-concentration lead to significant changes in the coefficients of nonlinear optical rectification, second and third harmonic generations. Keywords: Asymmetric double quantum well, Nonlinear optical rectification, Second and third harmonic generations, Intense laser field Özet. Bu çalışmada, asimetrik çift kuantum kuyusunun doğrusal olmayan optik düzeltme, ikinci ve üçüncü harmonikleri üzerine Al-konsantrasyonu ve rezonans olmayan yoğun lazer alanının etkisi kompakt yoğunluk matris yaklaşımı kullanılarak teorik olarak incelenmiştir. Sonuçlar, yoğun lazer alanı ve Al-konsantrasyonun doğrusal olmayan optik düzeltme, ikinci ve üçüncü harmonikler üzerine önemli değişmelere neden olduğunu göstermektedir.