Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

The European Physical Journal Plus

Effects of external fields and structural parameters on third harmonic generation of GaAs/AlGaAs Manning-like double quantum well structure

Ahmet Türker Tüzemen

Published Jun 11, 2024• 5 citations
Publisher

Abstract

Abstract In this theoretical work, we investigate how external fields like as electric, magnetic, and intense laser fields, as well as structural factors, affect the third harmonic generation (THG) coefficient of an AlGaAs/GaAs Manning-like double quantum well heterostructure. To achieve our goals, we numerically solve the time-independent Schrödinger equation using the diagonalization approach with the effective mass approximation and then derive the subband energy levels and corresponding wave functions of the structure. After that, we derive the mathematical expression of the THG coefficient by using the compact density matrix method. According to our results, the resonance peaks of the THG coefficient show shifting to the high-energy region with an increase in the field’s magnitude in cases where external fields (electric, magnetic, and intense laser) are applied separately. At the same time, increasing the depth (width) of the quantum well structure causes the THG peaks to shift to the high (low) energy region. We believe that the findings from this search will have a substantial impact on existing experimental device designs and applications.

DOI
10.1140/epjp/s13360-024-05328-3

Related papers

Intensity-dependent nonlinear optical properties in an asymmetric Gaussian potential quantum well-modulated by external fields

M. Sayrac, A. Türkoğlu, Miguel Eduardo Mora-Ramos +1 more

Abstract In this paper, the effects of external electric, magnetic and non-resonant intense laser fields on the nonlinear optical rectification (NOR), second-harmonic (SH), and third-harmonic (TH) generation in a GaAs quantum well with asymmetrical Gaussian potential are theoretically investigated. Firstly, the energy eigenvalues and eigenfunctions of a single electron confined in the structure are obtained by using the diagonalization method within the framework of the effective-mass and parabolic band approaches. Then, using these energy eigenvalues and eigenfunctions, expressions derived within the compact density matrix approximation has been employed to calculate the coefficients of the nonlinear optical response in the structure. The obtained simulation results show that the influence of the external fields leads to significant changes in the coefficients of nonlinear optical rectification, second and third harmonic generation in the system. As a result, it has been seen that the amplitude and position of the peaks of nonlinear optical rectification, second and third harmonic coefficients can be controlled by changing the applied external fields.

Optical and Quantum Electronics•Aug 13, 2021•20 citations

Regulation of optical properties by applied external fields for a quantum well with Hulthen potential

A. Türkoğlu

Abstract In this present study, the effects of electric, magnetic, and non-resonant intense laser field (ILF) on the linear, third-order nonlinear, and total optical absorption coefficients (TOACs) and relative refractive index changes (RRICs) of GaAs quantum well, having Hulthen confinement potential, were theoretically investigated. In addition, the dependence of the nonlinear optical properties in the structure on the optical intensity of incident photon and the inverse relaxation time was also calculated. To do this research, firstly the energy eigenvalues and eigenfunctions of the structure were calculated by using the effective mass and envelope function approaches. By using these calculated subband energy levels and wave functions belonging to these levels, the nonlinear optical properties of the system were obtained via the iterative method, within the compact density matrix approach framework. The obtained numerical results show that the optical properties of the considered system depend on the externally applied fields. With the applied external electric and magnetic field, the peak positions of TOACs and RRICs shift to higher energies, and the peak magnitudes increase. The high-frequency ILF applied to the structure shifts the peak positions of TOACs and RRICs initially towards higher energies and then towards lower energies and their peak sizes increase. These results show that the optical properties of the system can be adjusted purposively by changing the magnitude of applied external fields.

Laser Physics•Feb 24, 2022•13 citations

Examination of influences of external fields and structural parameters on the nonlinear optical properties of the GaAs/GaAlAs single quantum well with modified Lennard-Jones potential

H. Sayrac, Ahmet Türker Tüzemen, E. B. Al +2 more

Abstract In our investigation, we analyzed the variations in both linear and nonlinear optical properties of the GaAs/GaAlAs single quantum well heterostructure with modified Lennard-Jones potential under the conditions where external fields and the adjustable physical parameters of the structure are changed. We get the solution of the Schrödinger equation for identifying the subband energy levels with their wave functions taking advantage of the diagonalization method, effective mass approach, and parabolic band model. As a result, we find that the changes in the applied external fields and structure parameters have effects on the total optical absorption coefficients and total relative refractive index changes. While the optical response becomes red-shifted with the increment of applied electric, magnetic and intense laser fields and the well width, it becomes blue-shifted with the increment of the well depth.

Physica Scripta•Jun 3, 2025•5 citations

Study of third harmonic generation in quantum wells with a new potential

Guo Kang-xia

The third harmonic generation coefficients( THG) in quantum wells with a new potential are studied theoretically. We obtain eigenfunctions and energy eigenvalues by means of solving Schrodinger equation within the framework of effective mass approximation method. The analytic expressions of the third-harmonic generation coefficients can be got using the compact-density-matrix approach and iterative method. It is found that the THG coefficients are affected by the width of the quantum well d and the parameter U0.

Journal of Guangzhou University•Jan 1, 2015•0 citations

Investigation on Nonlinear Optical Properties of Symmetric and Asymmetric Double V-Shaped Potential Wells with Structural Parameters and External Electromagnetic Fields

Aysevil Salman Durmuşlar

Abstract Linear, nonlinear and total optical absorption coefficients and relative refractive index changes for both symmetric and asymmetric double V-shaped quantum well configurations formed within AlxGa1-xAs/GaAs heterostructure are theoretically investigated. Responses of these coefficients to well widths, barrier widths and concentration of aluminum within the barrier as well as applied external electromagnetic fields are the subject of this study. The electronic spectra of the structures are obtained as a solution of Schrödinger equation with relevant potential and external agents in the framework of effective mass and envelope wave function approximations. The optical properties are calculated via the analytical expressions obtained by iterative solutions within compact density matrix approach. Although increasing barrier width and aluminum concentration act similar significant red shifting on the referred coefficients for both symmetric and asymmetric double V-shaped wells, the varying well widths acts differently for each configuration. Widening both wells in symmetric case moves the resonance peaks to lower energies, while the rise on only one well carries the resonance peaks to higher energies for asymmetric case. Enhancing both the electric and magnetic fields shift the resonance peaks to the blue for symmetric and also asymmetric wells. High dependency of the optical properties to the structural parameters and external electromagnetic fields as well as asymmetry of the wells is presented here in detail.

•Oct 7, 2022•0 citations

Optical properties of a GaAs cone-like quantum dot: Second and third-harmonic generation

Reza Khordad, Hossein Bahramiyan

In the present work, we have studied numerically the second harmonic generation (SHG) and third harmonic generation (THG) in a cone-like quantum dot. For this purpose, we firstly obtained the energy levels and wave functions of this system. Then, we have used an expression for the SHG and THG by a compact density matrix approach and an iterative procedure. The SHG and THG enhance and shift toward lower energy by increasing the height h and vertex angle α. According to the results it is found that the structural parameters have great influence on the THG in this system.

Optics and Spectroscopy•Sep 1, 2014•28 citations
Abstract In this theoretical work, we investigate how external fields like as electric, magnetic, and intense laser fields, as well as structural factors, affect the third harmonic generation (THG) coefficient of an AlGaAs/GaAs Manning-like double quantum well heterostructure. To achieve our goals, we numerically solve the time-independent Schrödinger equation using the diagonalization approach with the effective mass approximation and then derive the subband energy levels and corresponding wave functions of the structure. After that, we derive the mathematical expression of the THG coefficient by using the compact density matrix method. According to our results, the resonance peaks of the THG coefficient show shifting to the high-energy region with an increase in the field’s magnitude in cases where external fields (electric, magnetic, and intense laser) are applied separately. At the same time, increasing the depth (width) of the quantum well structure causes the THG peaks to shift to the high (low) energy region. We believe that the findings from this search will have a substantial impact on existing experimental device designs and applications.
Abstract In this paper, the effects of external electric, magnetic and non-resonant intense laser fields on the nonlinear optical rectification (NOR), second-harmonic (SH), and third-harmonic (TH) generation in a GaAs quantum well with asymmetrical Gaussian potential are theoretically investigated. Firstly, the energy eigenvalues and eigenfunctions of a single electron confined in the structure are obtained by using the diagonalization method within the framework of the effective-mass and parabolic band approaches. Then, using these energy eigenvalues and eigenfunctions, expressions derived within the compact density matrix approximation has been employed to calculate the coefficients of the nonlinear optical response in the structure. The obtained simulation results show that the influence of the external fields leads to significant changes in the coefficients of nonlinear optical rectification, second and third harmonic generation in the system. As a result, it has been seen that the amplitude and position of the peaks of nonlinear optical rectification, second and third harmonic coefficients can be controlled by changing the applied external fields.
Abstract In this present study, the effects of electric, magnetic, and non-resonant intense laser field (ILF) on the linear, third-order nonlinear, and total optical absorption coefficients (TOACs) and relative refractive index changes (RRICs) of GaAs quantum well, having Hulthen confinement potential, were theoretically investigated. In addition, the dependence of the nonlinear optical properties in the structure on the optical intensity of incident photon and the inverse relaxation time was also calculated. To do this research, firstly the energy eigenvalues and eigenfunctions of the structure were calculated by using the effective mass and envelope function approaches. By using these calculated subband energy levels and wave functions belonging to these levels, the nonlinear optical properties of the system were obtained via the iterative method, within the compact density matrix approach framework. The obtained numerical results show that the optical properties of the considered system depend on the externally applied fields. With the applied external electric and magnetic field, the peak positions of TOACs and RRICs shift to higher energies, and the peak magnitudes increase. The high-frequency ILF applied to the structure shifts the peak positions of TOACs and RRICs initially towards higher energies and then towards lower energies and their peak sizes increase. These results show that the optical properties of the system can be adjusted purposively by changing the magnitude of applied external fields.
Abstract In our investigation, we analyzed the variations in both linear and nonlinear optical properties of the GaAs/GaAlAs single quantum well heterostructure with modified Lennard-Jones potential under the conditions where external fields and the adjustable physical parameters of the structure are changed. We get the solution of the Schrödinger equation for identifying the subband energy levels with their wave functions taking advantage of the diagonalization method, effective mass approach, and parabolic band model. As a result, we find that the changes in the applied external fields and structure parameters have effects on the total optical absorption coefficients and total relative refractive index changes. While the optical response becomes red-shifted with the increment of applied electric, magnetic and intense laser fields and the well width, it becomes blue-shifted with the increment of the well depth.
The third harmonic generation coefficients( THG) in quantum wells with a new potential are studied theoretically. We obtain eigenfunctions and energy eigenvalues by means of solving Schrodinger equation within the framework of effective mass approximation method. The analytic expressions of the third-harmonic generation coefficients can be got using the compact-density-matrix approach and iterative method. It is found that the THG coefficients are affected by the width of the quantum well d and the parameter U0.
Abstract Linear, nonlinear and total optical absorption coefficients and relative refractive index changes for both symmetric and asymmetric double V-shaped quantum well configurations formed within AlxGa1-xAs/GaAs heterostructure are theoretically investigated. Responses of these coefficients to well widths, barrier widths and concentration of aluminum within the barrier as well as applied external electromagnetic fields are the subject of this study. The electronic spectra of the structures are obtained as a solution of Schrödinger equation with relevant potential and external agents in the framework of effective mass and envelope wave function approximations. The optical properties are calculated via the analytical expressions obtained by iterative solutions within compact density matrix approach. Although increasing barrier width and aluminum concentration act similar significant red shifting on the referred coefficients for both symmetric and asymmetric double V-shaped wells, the varying well widths acts differently for each configuration. Widening both wells in symmetric case moves the resonance peaks to lower energies, while the rise on only one well carries the resonance peaks to higher energies for asymmetric case. Enhancing both the electric and magnetic fields shift the resonance peaks to the blue for symmetric and also asymmetric wells. High dependency of the optical properties to the structural parameters and external electromagnetic fields as well as asymmetry of the wells is presented here in detail.
In the present work, we have studied numerically the second harmonic generation (SHG) and third harmonic generation (THG) in a cone-like quantum dot. For this purpose, we firstly obtained the energy levels and wave functions of this system. Then, we have used an expression for the SHG and THG by a compact density matrix approach and an iterative procedure. The SHG and THG enhance and shift toward lower energy by increasing the height h and vertex angle α. According to the results it is found that the structural parameters have great influence on the THG in this system.