We present two possible methods for the fabrication of sub-micron sized Josephson junctions, namely the shadow-evaporation technique and the cross-type technology. Their importance for the field of modern super-conducting technology is discussed. As examples we present measurement results of a two-qubit sample and a prototype of a microwave detector fabricated each by one of the described methods. We review potential applications of superconducting quantum circuits based on the developed methods.
We present two possible methods for the fabrication of sub-micron sized Josephson junctions, namely the shadow-evaporation technique and the cross-type technology. Their importance for the field of modern super-conducting technology is discussed. As examples we present measurement results of a two-qubit sample and a prototype of a microwave detector fabricated each by one of the described methods. We review potential applications of superconducting quantum circuits based on the developed methods.
The performance of superconducting electronic devices such as superconducting quantum bits (qubits) and superconducting quantum interference devices (SQUIDs) strongly relies on high-quality Josephson junctions (JJ) and their integration into surrounding circuit elements. Therefore, a corresponding fabrication technology should allow for the fabrication of all required elements including the JJs, inductances, capacitances and waveguides. For a long time, shadow evaporation technique was the state of the art for the implementation of sub-μ m sized JJs based on aluminum for qubits of high coherence times. Although, the use of a single lithographic step represents a major advantage of this technique. However, shadowing effects limit sample size, device complexity, and thus scalability of the circuitry. To overcome these limitations and to meet the demands of next generation scalable quantum circuits, in this work we introduce our cross -type JJ aluminum technology, where JJs are defined by the overlap of two narrow perpendicular stripes. We discuss the technological challenges, with a focus on our newly developed dry etching process for patterning of the aluminum thin film. Compared to a lift-off based process, this advanced wafer-scale fabrication technology offers a high integration density and the required design flexibility. We will present first results on cross -type aluminum JJs.
Josephson tunnel junctions are the centerpiece of almost any superconducting electronic circuit, including qubits. Typically, the junctions for qubits are fabricated using shadow evaporation techniques to reduce dielectric loss contributions from the superconducting film interfaces. In recent years, however, sub-micrometer scale overlap junctions have started to attract attention. Compared to shadow mask techniques, neither an angle dependent deposition nor free-standing bridges or overlaps are needed, which are significant limitations for wafer-scale processing. This comes at the cost of breaking the vacuum during fabrication, but simplifies integration in multi-layered circuits and implementation of vastly different junction sizes and enables fabrication on a larger scale in an industrially standardized process. In this work, we demonstrate the feasibility of a subtractive process for the fabrication of overlap junctions. In an array of test contacts, we find low aging of the average normal state resistance of only 1.6% over 6 months. We evaluate the coherence properties of the junctions by employing them in superconducting transmon qubits. In time domain experiments, we find that both, the qubit life- and coherence time of our best device, are, on average, greater than 20 μs. Finally, we discuss potential improvements to our technique. This work paves the way toward a more standardized process flow with advanced materials and growth processes, and constitutes an important step for the large scale fabrication of superconducting quantum circuits.
Josephson tunnel junctions represent a key element in superconducting electronics and quantum circuits. For many years, shadow evaporation by means of Dolan-type bridges has been the state-of-the-art for deep sub- micrometer sized structures. Increasing demand in the number of Josephson junctions, e.g. in qubit circuits and travelling wave parametric amplifiers, requests for a wafer-scale fabrication process with precise control of junction parameters and have led to an advanced lift-off technique called Manhattan-type junction technology in recent years. Herein, we report on the development of a 100 mm wafer-scale fabrication technology for deep sub-micrometer sized Al Josephson junctions with linear dimensions down to 180 nm. The critical currentICof the junctions ranges from about 10 to 120 nA scaling with their linear dimensions. Low temperature transport measurements as well as room-temperature characterization has been used forICand process homogeneity determination of series arrays of up to 50 Josephson junctions. We discuss technology parameters such as yield, on-chip and on-wafer reproducibility of the junction's critical currents as well as main process limitations. Moreover, we present experimental results on the characterization of first transmon-type qubits fabricated using this technology.
Fabrication of sub-micron Josephson junctions is demonstrated using standard processing techniques for high-coherence, superconducting qubits. These junctions are made in two separate lithography steps with normal-angle evaporation. Most significantly, this work demonstrates that it is possible to achieve high coherence with junctions formed on aluminum surfaces cleaned in situ with Ar milling before the junction oxidation. This method eliminates the angle-dependent shadow masks typically used for small junctions. Therefore, this is conducive to the implementation of typical methods for improving margins and yield using conventional CMOS processing. The current method uses electron-beam lithography and an additive process to define the top and bottom electrodes. Extension of this work to optical lithography and subtractive processes is discussed.
We present a fabrication scheme and testing results for epitaxial sub-micrometer Josephson junctions. The junctions are made using a high-temperature (1170 K) "via process" yielding junctions as small as 0.8 mu m in diameter by use of optical lithography. Sapphire (Al2O3) tunnel-barriers are grown on an epitaxial Re/Ti multilayer base-electrode. We have fabricated devices with both Re and Al top electrodes. While room-temperature (295 K) resistance versus area data are favorable for both types of top electrodes, the low-temperature (50 mK) data show that junctions with the Al top electrode have a much higher subgap resistance. The microwave loss properties of the junctions have been measured by use of superconducting Josephson junction qubits. The results show that high subgap resistance correlates to improved qubit performance.
Besides serving as promising candidates for realizing quantum computing, superconducting quantum circuits are one of a few macroscopic physical systems in which fundamental quantum phenomena can be directly demonstrated and tested, giving rise to a vast field of intensive research work both theoretically and experimentally. In this paper we report our work on the fabrication of superconducting quantum circuits, starting from its building blocks: Al/AlO x /Al Josephson junctions. By using electron beam lithography patterning and shadow evaporation, we have fabricated aluminum Josephson junctions with a controllable critical current density ( j c ) and wide range of junction sizes from 0.01 μm 2 up to 1 μm 2 . We have carried out systematical studies on the oxidation process in fabricating Al/AlO x /Al Josephson junctions suitable for superconducting flux qubits. Furthermore, we have also fabricated superconducting quantum circuits such as superconducting flux qubits and charge-flux qubits.