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International Conference on Solid-State Sensors, Actuators and Microsystems

Fabrication and process characterization of atom transistor chips

Ho‐Chiao Chuang, Evan A. Salim, Vladan Vuletić, Dana Z. Anderson, Victor M. Bright

Published Jun 1, 2009• 0 citations
Publisher

Abstract

This paper describes the design and fabrication of an atom chip for atom tunneling experiments. A fabrication process was developed that uses a combination of UV-optical and Electron-Beam lithography to pattern micrometer and nanometer scale copper wires on a single chip. The minimum wire width fabricated in this work is 200 nm. The wires can carry current densities of more than 7.5times107A/cm2. The electrical current tests establish the feasibility of realizing chip-based atom tunneling experiments.

DOI
10.1109/sensor.2009.5285870

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This paper describes the design and fabrication of an atom chip for atom tunneling experiments. A fabrication process was developed that uses a combination of UV-optical and Electron-Beam lithography to pattern micrometer and nanometer scale copper wires on a single chip. The minimum wire width fabricated in this work is 200 nm. The wires can carry current densities of more than 7.5times107A/cm2. The electrical current tests establish the feasibility of realizing chip-based atom tunneling experiments.
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Neutral atoms can be trapped and manipulated with surface mounted microscopic current carrying and charged structures. We present a lithographic fabrication process for such atom chips based on evaporated metal films. The size limit of this process is below 1 μm. At room temperature, thin wires can carry current densities of more than 107A∕cm2 and voltages of more than 500 V. Extensive test measurements for different substrates and metal thicknesses (up to 5 μm) are compared to models for the heating characteristics of the microscopic wires. Among the materials tested, we find that Si is the best suited substrate for atom chips.
We employ a combination of optical and electron-beam lithography to create an atom chip combining submicron wire structures with larger conventional wires on a single substrate. The multilayer fabrication enables crossed wire configurations, greatly enhancing the flexibility in designing potentials for ultracold quantum gases and Bose–Einstein condensates. Large current densities of >6×107A∕cm2 and high voltages of up to 65V across 0.3μm gaps are supported by even the smallest wire structures. We experimentally demonstrate the flexibility of the next generation atom chip by producing Bose–Einstein condensates in magnetic traps created by a combination of wires involving all different fabrication methods and structure sizes.
Atom chips are robust and extremely powerful toolboxes for quantum optical experiments, since they make it possible to create exceedingly precise magnetic traps for neutral atoms with minimal field modulations. Accurate manipulation of trapped atoms is feasible with magnetic and electric fields created on the atom chip. Therefore atom chips with high quality surfaces and extremely well defined wires were build (roughness < 20nm). Furthermore new generations of atom chips were developed, like the multi-layer atom chip with contact-free wire crossings, the sub-micron structured atom chip and the semiconducting atom chip. Extensive characterisation measurements of atom chip wires demonstrated that the wires stand current densities of up to 10^7A/cm^2 for seconds and voltage differences of more than 500V over 10µm. From the different materials tested doped silicon with a thin silicon dioxide layer is the best qualified substrate for atom chip fabrication. The atom chips fabricated during this thesis have been used in many successful experiments, yielding numerous results. Moreover this thesis established the basics for many further experiments in atom physics and quantum optics and delivers complete instructions for the fabrication of all developed atom chips as well as an introduction to the experiments.
The laser cooling, trapping and manipulating of neutral atoms has become a valuable tool for scientists, providing innovative ways to probe the nature of reality and giving rise to transformative devices in the fields of precise measurement and quantum information processing. Unlike traditional complex and bulky atomic experimental facilities, atom chips, through the design, fabrication of surface-patterned microstructures, and the integration of devices on the substrates, can precisely control the magnetic, electric or optical fields on a micro-nano scale with low power consumption. It can realize strong trapping as well as coherent atomic manipulation. Since atom chip was first proposed twenty years ago, it has built a robust quantum platform for miniaturizing and integrating quantum optics and atomic physics tools on a chip. In this paper, first, we briefly review the development history of atom chips, then introduce the basic knowledge of micro potential traps and micro guides based on on-chip current-carrying wires. Afterwards, the key technologies about the chip material, design, fabrication, characterization and integration of atom chips are discussed in detail. We not only focus on the currently most active and successful areas - current carrying wires, but also look at more visionary approaches such as to the manipulation of atoms with real nano structures, say, carbon nano tubes. The design and fabrication principles of ideal atom chips are discussed as well. In the forth part, the worldwide plans and research projects involving with atom chip technologies are summarized, showing that many countries see this as an important foundational technology. Following that, the major developments in the application fields including atom clocks, atom interferometer gyroscope, cold atom gravimeter, etc are described. Finally, the challenges faced by atom chips towards practical application are pointed out and the prospects for their subsequent development are depicted.