Atom chips are robust and extremely powerful toolboxes for quantum optical experiments, since they make it possible to create exceedingly precise magnetic traps for neutral atoms with minimal field modulations. Accurate manipulation of trapped atoms is feasible with magnetic and electric fields created on the atom chip. Therefore atom chips with high quality surfaces and extremely well defined wires were build (roughness < 20nm). Furthermore new generations of atom chips were developed, like the multi-layer atom chip with contact-free wire crossings, the sub-micron structured atom chip and the semiconducting atom chip. Extensive characterisation measurements of atom chip wires demonstrated that the wires stand current densities of up to 10^7A/cm^2 for seconds and voltage differences of more than 500V over 10µm. From the different materials tested doped silicon with a thin silicon dioxide layer is the best qualified substrate for atom chip fabrication. The atom chips fabricated during this thesis have been used in many successful experiments, yielding numerous results. Moreover this thesis established the basics for many further experiments in atom physics and quantum optics and delivers complete instructions for the fabrication of all developed atom chips as well as an introduction to the experiments.
Atom chips are robust and extremely powerful toolboxes for quantum optical experiments, since they make it possible to create exceedingly precise magnetic traps for neutral atoms with minimal field modulations. Accurate manipulation of trapped atoms is feasible with magnetic and electric fields created on the atom chip. Therefore atom chips with high quality surfaces and extremely well defined wires were build (roughness < 20nm). Furthermore new generations of atom chips were developed, like the multi-layer atom chip with contact-free wire crossings, the sub-micron structured atom chip and the semiconducting atom chip. Extensive characterisation measurements of atom chip wires demonstrated that the wires stand current densities of up to 10^7A/cm^2 for seconds and voltage differences of more than 500V over 10µm. From the different materials tested doped silicon with a thin silicon dioxide layer is the best qualified substrate for atom chip fabrication. The atom chips fabricated during this thesis have been used in many successful experiments, yielding numerous results. Moreover this thesis established the basics for many further experiments in atom physics and quantum optics and delivers complete instructions for the fabrication of all developed atom chips as well as an introduction to the experiments.
The laser cooling, trapping and manipulating of neutral atoms has become a valuable tool for scientists, providing innovative ways to probe the nature of reality and giving rise to transformative devices in the fields of precise measurement and quantum information processing. Unlike traditional complex and bulky atomic experimental facilities, atom chips, through the design, fabrication of surface-patterned microstructures, and the integration of devices on the substrates, can precisely control the magnetic, electric or optical fields on a micro-nano scale with low power consumption. It can realize strong trapping as well as coherent atomic manipulation. Since atom chip was first proposed twenty years ago, it has built a robust quantum platform for miniaturizing and integrating quantum optics and atomic physics tools on a chip. In this paper, first, we briefly review the development history of atom chips, then introduce the basic knowledge of micro potential traps and micro guides based on on-chip current-carrying wires. Afterwards, the key technologies about the chip material, design, fabrication, characterization and integration of atom chips are discussed in detail. We not only focus on the currently most active and successful areas - current carrying wires, but also look at more visionary approaches such as to the manipulation of atoms with real nano structures, say, carbon nano tubes. The design and fabrication principles of ideal atom chips are discussed as well. In the forth part, the worldwide plans and research projects involving with atom chip technologies are summarized, showing that many countries see this as an important foundational technology. Following that, the major developments in the application fields including atom clocks, atom interferometer gyroscope, cold atom gravimeter, etc are described. Finally, the challenges faced by atom chips towards practical application are pointed out and the prospects for their subsequent development are depicted.
Neutral atoms can be trapped and manipulated with surface mounted microscopic current carrying and charged structures. We present a lithographic fabrication process for such atom chips based on evaporated metal films. The size limit of this process is below 1 μm. At room temperature, thin wires can carry current densities of more than 107A∕cm2 and voltages of more than 500 V. Extensive test measurements for different substrates and metal thicknesses (up to 5 μm) are compared to models for the heating characteristics of the microscopic wires. Among the materials tested, we find that Si is the best suited substrate for atom chips.
The field of atom chips is a relatively new area of research which is rapidly becoming of great interest to the scientific community. It started out as a small branch of cold atom physics which has quickly grown into a multidisciplinary\nsubject. It now encompasses topics from fundamental atomic and quantum theory, optics and laser science, to the engineering of ultra sensitive sensors.\n\nIn this thesis the first steps are taken towards a truly integrated atom chip device for real world applications. Multiple devices are presented that allow the trapping, cooling, manipulation and counting of atoms. Each device presents a new component required for the integration and miniaturisation of atom chips\ninto a single device, capable of being used as a sensor.\n\nInitially, a wire trap was created capable of trapping and splitting a cloud of BoseEinstein condensate (BEC) for use in atom interferometry. Using this chip a BEC has been successfully created, trapped and coherent splitting of this cloud has been achieved.\n\nSubsequently, the integration and simplification of the initial trapping process was approached. In all the experiments to date, atoms are initially collected from a warm vapour by a magneto-optical trap (MOT). This thesis presents a new approach in which microscopic pyramidal MOTs’ are integrated into the chip itself. This greatly reduces the number of optical components and helps to simplify the process significantly.\n\nAlso presented is a method for creating a planar-concave micro-cavity capable of single atom detection. One such cavity consists of a concave mirror fabricated in silicon and the planar tip of an optical fibre. The performance of the resonators\nis highly dependent on the surface roughness and shape profile of the concave mirrors therefore a detailed study into the fabrication technique and its effects on these parameters was undertaken. Using such cavities single atom detection has been shown to be possible. These cavities have also been sccessfully integrated into an atom wire guide.\n\nFinally a co-sputtered amorphous silicon/titanium (a-Si/Ti) nanocomposite material was created and studied for its use as a novel structural material. This material is potentially suitable for integrated circuitry (IC)/Micro-electromechanical-\nsystems (MEMS) integration. The material’s electrical and\nstructural properties were investigated and initial results suggest that a-Si/Ti has the potential to be a compelling structural material for future IC/MEMS integration.\n\nTo build all of these devices, a full range of standard microfabrication techniques was necessary as well as some non standard processes that required considerable process development such as the electrochemical deposition.\n\nThis thesis presents a tool box of fabrication techniques for creating various components capable of different tasks that can be integrated into a single device. Each component has been successfully demonstrated in laboratory conditions. This represents a significant step toward a real world atom chip device.
In this work, we report the development and characterization of an atom chip for magnetic trapping of cold 87Rb atoms. For fabrication of the atom chip, a silicon substrate was used after depositing an insulating layer of silica (SiO2) on it. An adhesive chromium layer was further deposited on this substrate before the deposition of the final layer of gold. On this gold coated substrate, a z-shaped gold wire (cross section, 500×2.5μm2) was fabricated by a photo-chemical machining method. The chip wire was tested for current–voltage characteristics for its reliable operation in magnetic trapping. The atoms from an U-magneto-optical trap, after optical pumping, were directly trapped in the magnetic trap of the atom chip.
In order to take quantum mechanical systems out of the lab and produce practical devices, a method of miniaturizing and integrating apparatus components is needed. In the context of ultracold atomic gas experiments, the ideal method of achieving this miniaturization is the implementation of atom chip technology. By depositing micro-scale current carrying wires onto planar substrates, it is possible to create a magnetic trap capable of confining a cloud of neutral atoms in sufficient proximity to the chip surface for solid state devices to interact with the cloud. This thesis presents our lab’s first steps towards creating an atom chip capable of confining a cloud of rubidium-87. The chip prototypes were developed with the intent to incorporate them into the hybrid system apparatus within our lab. The chips are intended to serve as a platform for facilitating the interaction between the atomic gas ensemble and mesoscopic solid-state devices, allowing for the hybridization of the two systems. In this work I describe the design of the trapping wire configuration and the fabrication of the first two generations of chip prototypes. Additionally, I provide numerical simulations of the produced magnetic field, from which estimates of the trap frequency and depth can be calculated. Finally, I introduce some basic characterization tests of the absolute current limitations and resistive behavior of the chip wires, and the dimensional uniformity of the fabricated wire profiles.
This study describes the design and fabrication of transparent atom chips for atomic physics experiments. A fabrication process was developed to define the wire patterns on a transparent glass substrate to create the desired magnetic field for atom trapping experiments. An area on the chip was reserved for the optical access, so that the laser light can penetrate directly through the glass substrate for the laser cooling process. Furthermore, since the thermal conductivity of the glass substrate is poorer than other common materials for atom chip substrate, for example silicon, silicon carbide, aluminum nitride. Thus, heat dissipation copper blocks are designed on the front and back of the glass substrate to improve the electrical current conduction. The testing results showed that a maximum burnout current of 2 A was measured from the wire pattern (with a width of 100 μm and a height of 20 μm) without any heat dissipation design and it can increase to 2.5 A with a heat dissipation design on the front side of the atom chips. Therefore, heat dissipation copper blocks were designed and fabricated on the back of the glass substrate just under the wire patterns which increases the maximum burnout current to 4.5 A. Moreover, a maximum burnout current of 6 A was achieved when the entire backside glass substrate was recessed and a thicker copper block was electroplated, which meets most requirements of atomic physics experiments.