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arXiv:cond-mat/0404141 · Applied Physics Letters

Atom chips: Fabrication and thermal properties

S. Groth, P. Krüger, S. Wildermuth, R. Folman, T. Fernholz, Jörg Schmiedmayer, D. Mahalu, I. Bar-Joseph

Published Oct 4, 2004• 105 citations
arXivHTMLPDF

Abstract

Neutral atoms can be trapped and manipulated with surface mounted microscopic current carrying and charged structures. We present a lithographic fabrication process for such atom chips based on evaporated metal films. The size limit of this process is below 1 μm. At room temperature, thin wires can carry current densities of more than 107A∕cm2 and voltages of more than 500 V. Extensive test measurements for different substrates and metal thicknesses (up to 5 μm) are compared to models for the heating characteristics of the microscopic wires. Among the materials tested, we find that Si is the best suited substrate for atom chips.

DOI
10.1063/1.1804601

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Neutral atoms can be trapped and manipulated with surface mounted microscopic current carrying and charged structures. We present a lithographic fabrication process for such atom chips based on evaporated metal films. The size limit of this process is below 1 μm. At room temperature, thin wires can carry current densities of more than 107A∕cm2 and voltages of more than 500 V. Extensive test measurements for different substrates and metal thicknesses (up to 5 μm) are compared to models for the heating characteristics of the microscopic wires. Among the materials tested, we find that Si is the best suited substrate for atom chips.
Atom chips are robust and extremely powerful toolboxes for quantum optical experiments, since they make it possible to create exceedingly precise magnetic traps for neutral atoms with minimal field modulations. Accurate manipulation of trapped atoms is feasible with magnetic and electric fields created on the atom chip. Therefore atom chips with high quality surfaces and extremely well defined wires were build (roughness < 20nm). Furthermore new generations of atom chips were developed, like the multi-layer atom chip with contact-free wire crossings, the sub-micron structured atom chip and the semiconducting atom chip. Extensive characterisation measurements of atom chip wires demonstrated that the wires stand current densities of up to 10^7A/cm^2 for seconds and voltage differences of more than 500V over 10µm. From the different materials tested doped silicon with a thin silicon dioxide layer is the best qualified substrate for atom chip fabrication. The atom chips fabricated during this thesis have been used in many successful experiments, yielding numerous results. Moreover this thesis established the basics for many further experiments in atom physics and quantum optics and delivers complete instructions for the fabrication of all developed atom chips as well as an introduction to the experiments.
We employ a combination of optical and electron-beam lithography to create an atom chip combining submicron wire structures with larger conventional wires on a single substrate. The multilayer fabrication enables crossed wire configurations, greatly enhancing the flexibility in designing potentials for ultracold quantum gases and Bose–Einstein condensates. Large current densities of >6×107A∕cm2 and high voltages of up to 65V across 0.3μm gaps are supported by even the smallest wire structures. We experimentally demonstrate the flexibility of the next generation atom chip by producing Bose–Einstein condensates in magnetic traps created by a combination of wires involving all different fabrication methods and structure sizes.
An atom chip has been fabricated for the study of interactions between 87^{87}87Rb Rydberg atoms and a Au surface. The chip tightly confines cold atoms by generating high magnetic field gradients using microfabricated current-carrying wires. These trapped atoms may be excited to Rydberg states at well-defined atom-surface distances. For the purpose of Rydberg atom-surface interaction studies, the chip has a thermally evaporated Au surface layer, separated from the underlying trapping wires by a planarizing polyimide dielectric. Special attention was paid to the edge roughness of the trapping wires, the planarization of the polyimide, and the grain structure of the Au surface.
This study describes the design and fabrication of transparent atom chips for atomic physics experiments. A fabrication process was developed to define the wire patterns on a transparent glass substrate to create the desired magnetic field for atom trapping experiments. An area on the chip was reserved for the optical access, so that the laser light can penetrate directly through the glass substrate for the laser cooling process. Furthermore, since the thermal conductivity of the glass substrate is poorer than other common materials for atom chip substrate, for example silicon, silicon carbide, aluminum nitride. Thus, heat dissipation copper blocks are designed on the front and back of the glass substrate to improve the electrical current conduction. The testing results showed that a maximum burnout current of 2 A was measured from the wire pattern (with a width of 100 μm and a height of 20 μm) without any heat dissipation design and it can increase to 2.5 A with a heat dissipation design on the front side of the atom chips. Therefore, heat dissipation copper blocks were designed and fabricated on the back of the glass substrate just under the wire patterns which increases the maximum burnout current to 4.5 A. Moreover, a maximum burnout current of 6 A was achieved when the entire backside glass substrate was recessed and a thicker copper block was electroplated, which meets most requirements of atomic physics experiments.
This paper describes the design and fabrication of an atom chip for atom tunneling experiments. A fabrication process was developed that uses a combination of UV-optical and Electron-Beam lithography to pattern micrometer and nanometer scale copper wires on a single chip. The minimum wire width fabricated in this work is 200 nm. The wires can carry current densities of more than 7.5times107A/cm2. The electrical current tests establish the feasibility of realizing chip-based atom tunneling experiments.