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arXiv:0801.3351 · Applied Physics Letters

Multilayer atom chips for versatile atom micromanipulation

M. Trinker, S. Groth, Stefan Haslinger, Stephanie Manz, Thomas Betz, Stephan Schneider, I. Bar‐Joseph, Thorsten Schumm, Jörg Schmiedmayer

Published Jun 23, 2008• 50 citations
arXivHTMLPDF

Abstract

We employ a combination of optical and electron-beam lithography to create an atom chip combining submicron wire structures with larger conventional wires on a single substrate. The multilayer fabrication enables crossed wire configurations, greatly enhancing the flexibility in designing potentials for ultracold quantum gases and Bose–Einstein condensates. Large current densities of >6×107A∕cm2 and high voltages of up to 65V across 0.3μm gaps are supported by even the smallest wire structures. We experimentally demonstrate the flexibility of the next generation atom chip by producing Bose–Einstein condensates in magnetic traps created by a combination of wires involving all different fabrication methods and structure sizes.

DOI
10.1063/1.2945893

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Neutral atoms can be trapped and manipulated with surface mounted microscopic current carrying and charged structures. We present a lithographic fabrication process for such atom chips based on evaporated metal films. The size limit of this process is below 1 μm. At room temperature, thin wires can carry current densities of more than 107A∕cm2 and voltages of more than 500 V. Extensive test measurements for different substrates and metal thicknesses (up to 5 μm) are compared to models for the heating characteristics of the microscopic wires. Among the materials tested, we find that Si is the best suited substrate for atom chips.
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