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Journal of the Optical Society of America B

Slow light using spin coherence and V-type electromagnetically induced transparency in [110] strained quantum wells

Shu‐Wei Chang, Shun Lien Chuang, Connie J. Chang-Hasnain, Hailin Wang

Published Mar 15, 2007• 15 citations
Publisher

Abstract

We model the slow-light phenomenon using electromagnetically induced transparency from spin coherence in [110] quantum wells. The long electron-spin lifetime in [110] quantum wells and the strain-induced shift of the light-hole-like excitonic transition energy below those of the heavy-hole-like continuum states can enhance the performance of slow light. The optical anisotropy due to band mixing and strain in [110] quantum wells is properly taken into consideration. By using light-hole-like excitons, the delay of a probe light with TM polarization in an optical waveguide controllable by an intense pump is made possible with the aid of long spin coherence.

DOI
10.1364/josab.24.000849

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We model the slow-light phenomenon using electromagnetically induced transparency from spin coherence in [110] quantum wells. The long electron-spin lifetime in [110] quantum wells and the strain-induced shift of the light-hole-like excitonic transition energy below those of the heavy-hole-like continuum states can enhance the performance of slow light. The optical anisotropy due to band mixing and strain in [110] quantum wells is properly taken into consideration. By using light-hole-like excitons, the delay of a probe light with TM polarization in an optical waveguide controllable by an intense pump is made possible with the aid of long spin coherence.
This is a detailed study of slow light based on quantum effects in semiconductor nanostructures. We propose to implement an optical buffer using semiconductor quantum dots and quantum wells based on coherent population oscillation and spin related electromagnetically induced transparency. We identify different pump-and-probe schemes and develop comprehensive theoretical models which include important physical mechanisms in semiconductors. Semiconductors have unique properties which are inaccessible to other slow light media, and these enable the possibilities of controlling the semiconductor-based optical buffer in addition to the optical method. We investigate how to electrically control group index (slowdown factor) in quantum dots by using reverse bias voltage and forward injection current. We also develop a model to use the anisotropy of the light-hole exciton to vary the slowdown factor via two different mechanisms (coherent population oscillation and spin related electromagnetically induced transparency). Finally, we propose an idea to use the strain to control the spin relaxation time in semiconductors, which can help spin-dependent slow light in semiconductors. This research shows that the semiconductor is a promising candidate to demonstrate an optical buffer and can provide more flexible control than other slow light materials.
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In this paper, a slow light device, which is composed of GaAs/AlGaAs [110] strained quantum wells, has been studied to realize V-type electromagnetically induced transparency phenomenon. Influences of applying electric and magnetic fields are investigated theoretically on main properties of the slow light devices, such as slow down factor and refractive index, based on Bloch equations approach. This is the first study of applying external magnetic and electric fields impacts on proposed structure by using V-type electromagnetically induced transparency. By changing the external fields, we are able to modify central frequency of presented structure that provides appropriate conditions in order to be utilized in optical storages, optical buffers and all-optical switches. According to the simulation results, the peak value of slow down factor is estimated to near 5000 when power intensity of pump and signal are 10 kW/cm2 and 0.1 kW/cm2, respectively. With optimization the amount of external fields, the central frequency of system can reach positive shift as high as 1.1 THz and negative shift close to -1.1 THz.
We propose and analyze a novel scheme to realize electromagnetically induced transparency (EIT) via robust electron spin coherence in semiconductor quantum wells. This scheme uses light hole transitions in a quantum well waveguide to induce electron spin coherence in the absence of an external magnetic field. For certain polarization configurations, the light hole transitions form a crossed double-V system. EIT in this system is strongly modified by a coherent wave mixing process induced by the electron spin coherence.
This article investigates and improves optical properties of slow light devices. The device structure consists GaAs/AlGaAs [110] strained quantum wells (QWs) based on V-type electromagnetically induced transparency (EIT). In this paper, we use an analytical model in fractional dimension in order to simulate and analysis slow light device. Effects of well width variation have been investigated on exciton oscillator strength (EOS) and fractional dimension parameter. Influences of these parameters alterations have been illustrated in optical properties of slow light system such as slow down factor (SDF) and central energy of the device. Based on obtained results, we can adjust optical variables of slow light system with controlling the well thickness. Using proposed method, we have also estimated the maximum value of SDF about 9×103.
A Λ-type three-level system of GaAs/AlGaAs multiple quantum wells (MQWs) was constructed by using exciton spin coherence in the transient optical response. Theoretical analysis with density matrix and Maxwell equations then yielded the phase shift, absorption, group velocity and group velocity dispersion. The calculated velocity is ∼6.14 × 104 m/s and the corresponding pulse delay is ∼8 ps. A convenient basis is provided for investigating how many-body effects in semiconductors modify the magnitude, spectral shape, and space and time dependence of the electromagnetically induced transparency phenomenon.