Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

International journal of optics and applications

Analytical Investigation of Slow Light Systems with Strained Quantum Wells Structure under Applied Magnetic and Electric Fields Based on V-type EIT

Saeed Abdolhosseini, Hassan Kaatuzian, Reza Kohandani

Published Apr 1, 2017• 0 citations
Publisher

Abstract

In this paper, a slow light device, which is composed of GaAs/AlGaAs [110] strained quantum wells, has been studied to realize V-type electromagnetically induced transparency phenomenon. Influences of applying electric and magnetic fields are investigated theoretically on main properties of the slow light devices, such as slow down factor and refractive index, based on Bloch equations approach. This is the first study of applying external magnetic and electric fields impacts on proposed structure by using V-type electromagnetically induced transparency. By changing the external fields, we are able to modify central frequency of presented structure that provides appropriate conditions in order to be utilized in optical storages, optical buffers and all-optical switches. According to the simulation results, the peak value of slow down factor is estimated to near 5000 when power intensity of pump and signal are 10 kW/cm2 and 0.1 kW/cm2, respectively. With optimization the amount of external fields, the central frequency of system can reach positive shift as high as 1.1 THz and negative shift close to -1.1 THz.

DOI
10.5923/j.optics.20170702.03

Related papers

Analysis and simulation of strained quantum wells slow light devices according to V-type EIT

Saeed Abdolhosseini, Hassan Kaatuzian, Bahram Choupanzadeh

This article investigates and improves optical properties of slow light devices. The device structure consists GaAs/AlGaAs [110] strained quantum wells (QWs) based on V-type electromagnetically induced transparency (EIT). In this paper, we use an analytical model in fractional dimension in order to simulate and analysis slow light device. Effects of well width variation have been investigated on exciton oscillator strength (EOS) and fractional dimension parameter. Influences of these parameters alterations have been illustrated in optical properties of slow light system such as slow down factor (SDF) and central energy of the device. Based on obtained results, we can adjust optical variables of slow light system with controlling the well thickness. Using proposed method, we have also estimated the maximum value of SDF about 9×103.

Iranian Conference on Electrical Engineering•May 1, 2017•1 citation

Analysis of the effects of applying external fields and device dimensions alterations on GaAs/AlGaAs multiple quantum well slow light devices based on excitonic population oscillation

Reza Kohandani, Ashkan Zandi, Hassan Kaatuzian

This paper demonstrates the effects of applying magnetic and electric fields and physical dimensions alterations on AlGaAs/GaAs multiple quantum well (QW) slow light devices. Physical parameters include quantum well sizes and number of quantum wells. To the best of our knowledge, this is the first analysis of the effects of both applying magnetic/electric fields and physical parameters alterations and the first suggestion for matching the prefabrication and post fabrication tuning of the slow light devices based on excitonic population oscillations. The aim of our theoretical analysis is controlling the optical properties such as central frequency, bandwidth, and slow down factor (SDF) in slow light devices based on excitonic population oscillation to achieve better tuning. To reach these purposes, first we investigate the quantum well size and number of quantum wells alteration effects. Next, we analyze the effects of applying magnetic and electric fields to the multiple quantum well structure, separately. Finally, physical parameters and applied external fields are changed for measuring frequency shift and SDF for coherent population oscillation slow light devices. The results show the available central frequency shifts in about 1.6 THz at best. Also the SDF value improvement is about one order of magnitude. These results will be applicable for optical nonlinearity enhancements, all-optical signal processing, optical communications, all-optical switches, optical modulators, and variable true delays.

Applied Optics•Feb 19, 2014•9 citations

Electric field effects on multiple quantum wells slow light device

Hossein Shokri Kojori, Hassan Kaatuzian, Abodolbar Mallah

Summary from only given. This paper investigates the effect of applied electric field on frequency center, bandwidth and slow down factor of an slow light device. In this way, we consider the shift of exciton energy levels in quantum wells. Analysis and simulation of a basic GaAs/AlGaAs quantum wells optical slow light device shows that applied electric field can tune the frequency and time domain properties of an optical slow light device. Simulation shows that electric field could shift the limited gigahertz bandwidth of this device up to 1 THz. These achievements are useful in optical nonlinearity enhancement and all-optical signal processing applications.

Iranian Conference on Electrical Engineering•Jan 1, 2011•0 citations

Theoretical analysis of multiple quantum-well, slow-light devices under applied external fields using a fully analytical model in fractional dimension

Reza Kohandani, Hassan Kaatuzian

We report a theoretical study of optical properties of AlGaAs/GaAs multiple quantum-well (MQW), slow-light devices based on excitonic population oscillations under applied external magnetic and electric fields using an analytical model for complex dielectric constant of Wannier excitons in fractional dimension. The results are shown for quantum wells (QWs) of different width. The significant characteristics of the exciton in QWs such as exciton energy and exciton oscillator strength (EOS) can be varied by application of external magnetic and electric fields. It is found that a higher bandwidth and an appropriate slow-down factor (SDF) can be achieved by changing the QW width during the fabrication process and by applying magnetic and electric fields during device functioning, respectively. It is shown that a SDF of is obtained at best.

Quantum Electronics•Jan 31, 2015•7 citations

Theoretical Investigation of effects of Size Variations and External Magnetic Field on Binding Energy and Center Frequency in InGaAs/GaAs Quantum Dot Slow Light Devices

Bahram Choupanzadeh, Hassan Kaatuzian

This paper theoretically investigates the effects of changing external magnetic field intensity on exciton binding energy and center frequency in Quantum Dot (QD) slow light devices. The physical size alterations including quantum dot radius and height on the optical characteristics of this device will also be studied. Finally, by variations of both the abovementioned items (magnetic applied field and device sizes), we will predict new properties for the device. Material of the quantum dot (QD) slow light device is made from InGaAs/GaAs and basically works by the coherent population oscillations (CPO) method. Optical properties such as exciton binding energy and center frequency can be tuned and improved using several methods that are discussed in this paper. These methods may be used for optical modulation, signal processing, switching and optical communications. According to the results of our investigation, binding energy may be estimated at the range of 0.02 electron-volts and central frequency of the QD slow light device can be modified in the range of 5 THz.

Iranian Conference on Electrical Engineering•Apr 1, 2019•0 citations

Electromagnetically-induced transparency and slow light in GaAs/AlGaAs multiple quantum wells in a transient regime

Seongmin Ma, Hua Xu, Byoung Seung HAM

Electromagnetically-induced transparency (EIT) is observed and analyzed for the group velocity of a femtosecond light pulse interacting with GaAs/AlGaAs multiple quantum wells (MQWs) in a transient regime. The calculated slowdown factor of the group velocity inside the medium due to the dynamic refractive index change is approximately 2.10 x 10(3). We discuss the potential of EIT-induced slow light in GaAs/AlGaAs MQWs for ultrafast (approximately 210 GHz) all-optical information processing such as photon routing.

Optics Express•Aug 6, 2009•55 citations
In this paper, a slow light device, which is composed of GaAs/AlGaAs [110] strained quantum wells, has been studied to realize V-type electromagnetically induced transparency phenomenon. Influences of applying electric and magnetic fields are investigated theoretically on main properties of the slow light devices, such as slow down factor and refractive index, based on Bloch equations approach. This is the first study of applying external magnetic and electric fields impacts on proposed structure by using V-type electromagnetically induced transparency. By changing the external fields, we are able to modify central frequency of presented structure that provides appropriate conditions in order to be utilized in optical storages, optical buffers and all-optical switches. According to the simulation results, the peak value of slow down factor is estimated to near 5000 when power intensity of pump and signal are 10 kW/cm2 and 0.1 kW/cm2, respectively. With optimization the amount of external fields, the central frequency of system can reach positive shift as high as 1.1 THz and negative shift close to -1.1 THz.
This article investigates and improves optical properties of slow light devices. The device structure consists GaAs/AlGaAs [110] strained quantum wells (QWs) based on V-type electromagnetically induced transparency (EIT). In this paper, we use an analytical model in fractional dimension in order to simulate and analysis slow light device. Effects of well width variation have been investigated on exciton oscillator strength (EOS) and fractional dimension parameter. Influences of these parameters alterations have been illustrated in optical properties of slow light system such as slow down factor (SDF) and central energy of the device. Based on obtained results, we can adjust optical variables of slow light system with controlling the well thickness. Using proposed method, we have also estimated the maximum value of SDF about 9×103.
This paper demonstrates the effects of applying magnetic and electric fields and physical dimensions alterations on AlGaAs/GaAs multiple quantum well (QW) slow light devices. Physical parameters include quantum well sizes and number of quantum wells. To the best of our knowledge, this is the first analysis of the effects of both applying magnetic/electric fields and physical parameters alterations and the first suggestion for matching the prefabrication and post fabrication tuning of the slow light devices based on excitonic population oscillations. The aim of our theoretical analysis is controlling the optical properties such as central frequency, bandwidth, and slow down factor (SDF) in slow light devices based on excitonic population oscillation to achieve better tuning. To reach these purposes, first we investigate the quantum well size and number of quantum wells alteration effects. Next, we analyze the effects of applying magnetic and electric fields to the multiple quantum well structure, separately. Finally, physical parameters and applied external fields are changed for measuring frequency shift and SDF for coherent population oscillation slow light devices. The results show the available central frequency shifts in about 1.6 THz at best. Also the SDF value improvement is about one order of magnitude. These results will be applicable for optical nonlinearity enhancements, all-optical signal processing, optical communications, all-optical switches, optical modulators, and variable true delays.
Summary from only given. This paper investigates the effect of applied electric field on frequency center, bandwidth and slow down factor of an slow light device. In this way, we consider the shift of exciton energy levels in quantum wells. Analysis and simulation of a basic GaAs/AlGaAs quantum wells optical slow light device shows that applied electric field can tune the frequency and time domain properties of an optical slow light device. Simulation shows that electric field could shift the limited gigahertz bandwidth of this device up to 1 THz. These achievements are useful in optical nonlinearity enhancement and all-optical signal processing applications.
We report a theoretical study of optical properties of AlGaAs/GaAs multiple quantum-well (MQW), slow-light devices based on excitonic population oscillations under applied external magnetic and electric fields using an analytical model for complex dielectric constant of Wannier excitons in fractional dimension. The results are shown for quantum wells (QWs) of different width. The significant characteristics of the exciton in QWs such as exciton energy and exciton oscillator strength (EOS) can be varied by application of external magnetic and electric fields. It is found that a higher bandwidth and an appropriate slow-down factor (SDF) can be achieved by changing the QW width during the fabrication process and by applying magnetic and electric fields during device functioning, respectively. It is shown that a SDF of is obtained at best.
This paper theoretically investigates the effects of changing external magnetic field intensity on exciton binding energy and center frequency in Quantum Dot (QD) slow light devices. The physical size alterations including quantum dot radius and height on the optical characteristics of this device will also be studied. Finally, by variations of both the abovementioned items (magnetic applied field and device sizes), we will predict new properties for the device. Material of the quantum dot (QD) slow light device is made from InGaAs/GaAs and basically works by the coherent population oscillations (CPO) method. Optical properties such as exciton binding energy and center frequency can be tuned and improved using several methods that are discussed in this paper. These methods may be used for optical modulation, signal processing, switching and optical communications. According to the results of our investigation, binding energy may be estimated at the range of 0.02 electron-volts and central frequency of the QD slow light device can be modified in the range of 5 THz.
Electromagnetically-induced transparency (EIT) is observed and analyzed for the group velocity of a femtosecond light pulse interacting with GaAs/AlGaAs multiple quantum wells (MQWs) in a transient regime. The calculated slowdown factor of the group velocity inside the medium due to the dynamic refractive index change is approximately 2.10 x 10(3). We discuss the potential of EIT-induced slow light in GaAs/AlGaAs MQWs for ultrafast (approximately 210 GHz) all-optical information processing such as photon routing.