Iranian Conference on Electrical Engineering

Theoretical Investigation of effects of Size Variations and External Magnetic Field on Binding Energy and Center Frequency in InGaAs/GaAs Quantum Dot Slow Light Devices

Bahram Choupanzadeh, Hassan Kaatuzian

Published Apr 1, 2019• 0 citations

Abstract

This paper theoretically investigates the effects of changing external magnetic field intensity on exciton binding energy and center frequency in Quantum Dot (QD) slow light devices. The physical size alterations including quantum dot radius and height on the optical characteristics of this device will also be studied. Finally, by variations of both the abovementioned items (magnetic applied field and device sizes), we will predict new properties for the device. Material of the quantum dot (QD) slow light device is made from InGaAs/GaAs and basically works by the coherent population oscillations (CPO) method. Optical properties such as exciton binding energy and center frequency can be tuned and improved using several methods that are discussed in this paper. These methods may be used for optical modulation, signal processing, switching and optical communications. According to the results of our investigation, binding energy may be estimated at the range of 0.02 electron-volts and central frequency of the QD slow light device can be modified in the range of 5 THz.

DOI: 10.1109/iraniancee.2019.8786633

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