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Optics and Photonics Journal

Effects of Quantum well Size Alteration on Excitonic Population Oscillation Slow Light Devices Properties

Hassan Kaatuzian, Hossein Shokri Kojori, Ashkan Zandi, Reza Kohandani

Published Jan 1, 2013• 7 citations
Publisher

Abstract

This paper investigates the effects of quantum well size changes on center frequency and slow down factor of an slow light device. In this way, we consider the quantum well size alteration effects on oscillator strength and binding energy of exciton. First, we investigate the variations in oscillator strength of exciton due to different quantum well size. Second, exciton binding energy level shift due to size of quantum well is investigated. According to this analysis, we have developed a new method for tuning slow light device bandwidth center frequency and slow down factor. Analysis and simulation of a basic GaAs/AlGaAs quantum wells optical slow light device based on excitonic population oscillation shows that size of quantum wells could tune both of the frequency properties and slow down factor of an optical slow light device. In our simulation with 34 quantum wells each with the width of 60?, we have received the slow down factor of more than 60,000. These achievements are useful in optical nonlinearity enhancements, all-optical signal processing applications and optical communications.

DOI
10.4236/opj.2013.32b070

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This paper demonstrates the effects of applying magnetic and electric fields and physical dimensions alterations on AlGaAs/GaAs multiple quantum well (QW) slow light devices. Physical parameters include quantum well sizes and number of quantum wells. To the best of our knowledge, this is the first analysis of the effects of both applying magnetic/electric fields and physical parameters alterations and the first suggestion for matching the prefabrication and post fabrication tuning of the slow light devices based on excitonic population oscillations. The aim of our theoretical analysis is controlling the optical properties such as central frequency, bandwidth, and slow down factor (SDF) in slow light devices based on excitonic population oscillation to achieve better tuning. To reach these purposes, first we investigate the quantum well size and number of quantum wells alteration effects. Next, we analyze the effects of applying magnetic and electric fields to the multiple quantum well structure, separately. Finally, physical parameters and applied external fields are changed for measuring frequency shift and SDF for coherent population oscillation slow light devices. The results show the available central frequency shifts in about 1.6 THz at best. Also the SDF value improvement is about one order of magnitude. These results will be applicable for optical nonlinearity enhancements, all-optical signal processing, optical communications, all-optical switches, optical modulators, and variable true delays.
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This paper theoretically presents a technique for characteristics tuning of AlGaAs/GaAs multiple quantum well (MQW) slow light devices based on excitonic population oscillations. The multiple quantum well slow light device is analyzed and simulated using semiconductor Bloch equations. In addition the simulation results are shown for the quantum wells (QWs) of different width and barriers with different alloy concentration. The results demonstrate that the optical properties of the slow light device, such as central frequency and bandwidth, are dependent on quantum well width and aluminum percentage of the multiple quantum well structure. According to the best theoretical results, the central frequency of the device can be shifted in a range of 2THz.
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