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Iranian Conference on Electrical Engineering

Well width and alloy concentration dependence of optical properties of slow light devices

Hassan Kaatuzian, Reza Kohandani

Published May 1, 2015• 3 citations
Publisher

Abstract

This paper theoretically presents a technique for characteristics tuning of AlGaAs/GaAs multiple quantum well (MQW) slow light devices based on excitonic population oscillations. The multiple quantum well slow light device is analyzed and simulated using semiconductor Bloch equations. In addition the simulation results are shown for the quantum wells (QWs) of different width and barriers with different alloy concentration. The results demonstrate that the optical properties of the slow light device, such as central frequency and bandwidth, are dependent on quantum well width and aluminum percentage of the multiple quantum well structure. According to the best theoretical results, the central frequency of the device can be shifted in a range of 2THz.

DOI
10.1109/iraniancee.2015.7146435

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This paper theoretically presents a technique for characteristics tuning of AlGaAs/GaAs multiple quantum well (MQW) slow light devices based on excitonic population oscillations. The multiple quantum well slow light device is analyzed and simulated using semiconductor Bloch equations. In addition the simulation results are shown for the quantum wells (QWs) of different width and barriers with different alloy concentration. The results demonstrate that the optical properties of the slow light device, such as central frequency and bandwidth, are dependent on quantum well width and aluminum percentage of the multiple quantum well structure. According to the best theoretical results, the central frequency of the device can be shifted in a range of 2THz.
The influence of barrier thickness variations on the operation of GaAs/AlGaAs multiple quantum well (MQW) slow light devices based on coherence population oscillations (CPOs) is explained. The variations are shown to affect the slow down factor (SDF) and bandwidth of these devices. Bloch equations and the analytical model in fractional dimension are used to analyse and simulate the slow light device. It is shown that other physical parameters of MQW structures (QW width and barrier alloy concentration) affect significantly the optical properties of the device. The presented approaches make it possible to achieve suitable values of SDF and focal energy by adjusting the barrier thickness, QW width and aluminium content. The maximum range of the centre frequency tuning is estimated to be about 1 THz in our calculations, while the slow down factor can reach a high value of 8.5 × 10 4 .
This paper demonstrates the effects of applying magnetic and electric fields and physical dimensions alterations on AlGaAs/GaAs multiple quantum well (QW) slow light devices. Physical parameters include quantum well sizes and number of quantum wells. To the best of our knowledge, this is the first analysis of the effects of both applying magnetic/electric fields and physical parameters alterations and the first suggestion for matching the prefabrication and post fabrication tuning of the slow light devices based on excitonic population oscillations. The aim of our theoretical analysis is controlling the optical properties such as central frequency, bandwidth, and slow down factor (SDF) in slow light devices based on excitonic population oscillation to achieve better tuning. To reach these purposes, first we investigate the quantum well size and number of quantum wells alteration effects. Next, we analyze the effects of applying magnetic and electric fields to the multiple quantum well structure, separately. Finally, physical parameters and applied external fields are changed for measuring frequency shift and SDF for coherent population oscillation slow light devices. The results show the available central frequency shifts in about 1.6 THz at best. Also the SDF value improvement is about one order of magnitude. These results will be applicable for optical nonlinearity enhancements, all-optical signal processing, optical communications, all-optical switches, optical modulators, and variable true delays.
We report a theoretical study of optical properties of AlGaAs/GaAs multiple quantum-well (MQW), slow-light devices based on excitonic population oscillations under applied external magnetic and electric fields using an analytical model for complex dielectric constant of Wannier excitons in fractional dimension. The results are shown for quantum wells (QWs) of different width. The significant characteristics of the exciton in QWs such as exciton energy and exciton oscillator strength (EOS) can be varied by application of external magnetic and electric fields. It is found that a higher bandwidth and an appropriate slow-down factor (SDF) can be achieved by changing the QW width during the fabrication process and by applying magnetic and electric fields during device functioning, respectively. It is shown that a SDF of is obtained at best.
This paper investigates the effects of quantum well size changes on center frequency and slow down factor of an slow light device. In this way, we consider the quantum well size alteration effects on oscillator strength and binding energy of exciton. First, we investigate the variations in oscillator strength of exciton due to different quantum well size. Second, exciton binding energy level shift due to size of quantum well is investigated. According to this analysis, we have developed a new method for tuning slow light device bandwidth center frequency and slow down factor. Analysis and simulation of a basic GaAs/AlGaAs quantum wells optical slow light device based on excitonic population oscillation shows that size of quantum wells could tune both of the frequency properties and slow down factor of an optical slow light device. In our simulation with 34 quantum wells each with the width of 60?, we have received the slow down factor of more than 60,000. These achievements are useful in optical nonlinearity enhancements, all-optical signal processing applications and optical communications.
Summary from only given. This paper investigates the effect of applied electric field on frequency center, bandwidth and slow down factor of an slow light device. In this way, we consider the shift of exciton energy levels in quantum wells. Analysis and simulation of a basic GaAs/AlGaAs quantum wells optical slow light device shows that applied electric field can tune the frequency and time domain properties of an optical slow light device. Simulation shows that electric field could shift the limited gigahertz bandwidth of this device up to 1 THz. These achievements are useful in optical nonlinearity enhancement and all-optical signal processing applications.
This article investigates and improves optical properties of slow light devices. The device structure consists GaAs/AlGaAs [110] strained quantum wells (QWs) based on V-type electromagnetically induced transparency (EIT). In this paper, we use an analytical model in fractional dimension in order to simulate and analysis slow light device. Effects of well width variation have been investigated on exciton oscillator strength (EOS) and fractional dimension parameter. Influences of these parameters alterations have been illustrated in optical properties of slow light system such as slow down factor (SDF) and central energy of the device. Based on obtained results, we can adjust optical variables of slow light system with controlling the well thickness. Using proposed method, we have also estimated the maximum value of SDF about 9×103.