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Slow Light Based on Quantum Effects in Quantum Wells and Quantum Dots

Shu‐Wei Chang

Published Jan 1, 2006• 1 citation
OpenAlex

Abstract

This is a detailed study of slow light based on quantum effects in semiconductor nanostructures. We propose to implement an optical buffer using semiconductor quantum dots and quantum wells based on coherent population oscillation and spin related electromagnetically induced transparency. We identify different pump-and-probe schemes and develop comprehensive theoretical models which include important physical mechanisms in semiconductors. Semiconductors have unique properties which are inaccessible to other slow light media, and these enable the possibilities of controlling the semiconductor-based optical buffer in addition to the optical method. We investigate how to electrically control group index (slowdown factor) in quantum dots by using reverse bias voltage and forward injection current. We also develop a model to use the anisotropy of the light-hole exciton to vary the slowdown factor via two different mechanisms (coherent population oscillation and spin related electromagnetically induced transparency). Finally, we propose an idea to use the strain to control the spin relaxation time in semiconductors, which can help spin-dependent slow light in semiconductors. This research shows that the semiconductor is a promising candidate to demonstrate an optical buffer and can provide more flexible control than other slow light materials.

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This is a detailed study of slow light based on quantum effects in semiconductor nanostructures. We propose to implement an optical buffer using semiconductor quantum dots and quantum wells based on coherent population oscillation and spin related electromagnetically induced transparency. We identify different pump-and-probe schemes and develop comprehensive theoretical models which include important physical mechanisms in semiconductors. Semiconductors have unique properties which are inaccessible to other slow light media, and these enable the possibilities of controlling the semiconductor-based optical buffer in addition to the optical method. We investigate how to electrically control group index (slowdown factor) in quantum dots by using reverse bias voltage and forward injection current. We also develop a model to use the anisotropy of the light-hole exciton to vary the slowdown factor via two different mechanisms (coherent population oscillation and spin related electromagnetically induced transparency). Finally, we propose an idea to use the strain to control the spin relaxation time in semiconductors, which can help spin-dependent slow light in semiconductors. This research shows that the semiconductor is a promising candidate to demonstrate an optical buffer and can provide more flexible control than other slow light materials.
A compact variable all-optical buffer using semiconductor quantum dot (QD) structures is proposed and analyzed. The buffering effect is achieved by slowing down the optical signal using an external control light source to vary the dispersion characteristic of the medium via an electromagnetically induced transparency effect. We present a theoretical investigation of the criteria for achieving slow light in semiconductor QDs. A QD structure in the presence of strain is analyzed with the inclusion of polarization-dependent intersubband dipole selection rules. Experimental methods to synthesize and the measurements of coherent properties in state-of-the-art QDs are surveyed. Slow-light effects in uniform and nonuniform QDs are compared. Finally, optical signal propagation through the semiconductor optical buffer is presented to demonstrate the feasibility for practical applications.
We develop a model for slow light based on the coherent population oscillation of quantum dots at room temperature. With the absorption dip and corresponding variation of the refractive index due to the coherent population beating induced by the pump and probe signal, quantum dots can be used as a slow-light medium. Our theoretical model matches the experimental results very well. We also experimentally and theoretically demonstrate that both the forward-bias injection current and reverse-bias voltage can change the group index in a semiconductor quantum-dot waveguide. Our results indicate that quantum-dot devices can be potentially used as electrically and optically controllable slow light devices
We proposed a compact variable all-optical buffer using slow-light in semiconductor nanostructures. We discuss the general design principle via dispersion engineering. The buffering effect is achieved by slowing down the optical signal using an external control light source to vary the dispersion characteristic of the medium via electromagnetically induced transparency effect. We demonstrate that the semiconductor quantum dot structures can be used as a slow-light medium. In such structure, the total buffering time is variable and controlled by an external pump laser. We present a theoretical investigation of the criteria for achieving slow light in semiconductor quantum dots. New pump scheme is proposed to overcome the sample nonuniformity. Finally, optical signal propagation through the semiconductor optical buffer is presented to demonstrate the feasibility for practical applications.
We develop a theoretical model for slow light using excitonic population oscillation in a semiconductor quantum well. In a two-level system, if the resonant pump and the signal have a difference frequency within the range of inverse of the carrier lifetime, coherent population beating at this frequency will be generated. We analyze the excitonic population oscillation using an atomiclike model extended from semiconductor Bloch equations for both spin subsystems of the excitonic population and the electrical polarization density. The two spin subsystems are coupled by the excitation-induced dephasing rate, which depends on the net population difference in conduction and heavy hole quantized bands and the population exchange due to flip of the spins of electrons or holes. We present our theoretical results for the absorbance, the refractive index spectra, and the slowdown factor due to population oscillation at various pump intensities, and show very good agreement with experimental data. It is shown that a slowdown factor of $3.12\ifmmode\times\else\texttimes\fi{}{10}^{4}$ has been achieved for a semiconductor quantum-well structure. We also obtain analytical solutions from our theory and account for different response behaviors of the signal when its polarization is either parallel or orthogonal to that of the pump, which has also been confirmed by experiments.
Investigations of slow and fast light effects in semiconductor waveguides entail interesting physics and point to a number of promising applications. In this review we give an overview of recent progress in the field, in particular focusing on the physical mechanisms of electromagnetically induced transparency and coherent population oscillations. While electromagnetically induced transparency has been the most important effect in realizing slowdown effects in atomic gasses, progress has been comparatively slow in semiconductors due to inherent problems of fast dephasing times and inhomogeneous broadening in quantum dots. The physics of electromagnetically induced transparency in semiconductors is discussed, emphasizing these limitations and recent suggestions for overcoming them. On the other hand, the mechanism of coherent population oscillations relies on wave mixing effects and is well suited for semiconductor waveguides. Recent experimental progress is reviewed, emphasizing new ideas that have significantly enhanced the degree of control that can be exercised and the frequency range that can be achieved. Thus, applications within microwave photonics appear to be within reach.
We model the slow-light phenomenon using electromagnetically induced transparency from spin coherence in [110] quantum wells. The long electron-spin lifetime in [110] quantum wells and the strain-induced shift of the light-hole-like excitonic transition energy below those of the heavy-hole-like continuum states can enhance the performance of slow light. The optical anisotropy due to band mixing and strain in [110] quantum wells is properly taken into consideration. By using light-hole-like excitons, the delay of a probe light with TM polarization in an optical waveguide controllable by an intense pump is made possible with the aid of long spin coherence.