Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

IEEE Journal of Quantum Electronics

Slow Light Based on Coherent Population Oscillation in Quantum Dots at Room Temperature

Shu‐Wei Chang, Piotr Konrad Kondratko, Hui Su, Shun Lien Chuang

Published Jan 23, 2007• 31 citations
Publisher

Abstract

We develop a model for slow light based on the coherent population oscillation of quantum dots at room temperature. With the absorption dip and corresponding variation of the refractive index due to the coherent population beating induced by the pump and probe signal, quantum dots can be used as a slow-light medium. Our theoretical model matches the experimental results very well. We also experimentally and theoretically demonstrate that both the forward-bias injection current and reverse-bias voltage can change the group index in a semiconductor quantum-dot waveguide. Our results indicate that quantum-dot devices can be potentially used as electrically and optically controllable slow light devices

DOI
10.1109/jqe.2006.889060

Related papers

Room-temperature slow light with semiconductor quantum-dot devices

Hui Su, Shun Lien Chuang

We demonstrate room-temperature slow light that is electrically and optically controllable by using a quantum-dot (QD) semiconductor optical amplifier (SOA) at zero and low bias below the transparency current. The absorption spectrum of the QD SOA exhibits a spectral dip with a corresponding group-index dispersion and group delay owing to coherent population oscillation caused by the interaction of pump and probe laser light near resonance of the first heavy-hole-conduction-state transition. At an optical pump power of approximately 0.3 mW inside the single-mode waveguide without current injection, a group-index change of 3.0 with a bandwidth of 2 GHz was measured. This group-index change can be controlled by injection of electrical current and by changing the optical pump power.

Optics Letters•Jan 15, 2006•86 citations

Slow Light Based on Quantum Effects in Quantum Wells and Quantum Dots

Shu‐Wei Chang

This is a detailed study of slow light based on quantum effects in semiconductor nanostructures. We propose to implement an optical buffer using semiconductor quantum dots and quantum wells based on coherent population oscillation and spin related electromagnetically induced transparency. We identify different pump-and-probe schemes and develop comprehensive theoretical models which include important physical mechanisms in semiconductors. Semiconductors have unique properties which are inaccessible to other slow light media, and these enable the possibilities of controlling the semiconductor-based optical buffer in addition to the optical method. We investigate how to electrically control group index (slowdown factor) in quantum dots by using reverse bias voltage and forward injection current. We also develop a model to use the anisotropy of the light-hole exciton to vary the slowdown factor via two different mechanisms (coherent population oscillation and spin related electromagnetically induced transparency). Finally, we propose an idea to use the strain to control the spin relaxation time in semiconductors, which can help spin-dependent slow light in semiconductors. This research shows that the semiconductor is a promising candidate to demonstrate an optical buffer and can provide more flexible control than other slow light materials.

•Jan 1, 2006•1 citation

Variable Slow Light Using Coherent Population Oscillation in Quantum Dot Electro-absorption Modulator

Piotr Konrad Kondratko, Shu‐Wei Chang, Hui Su +1 more

Room temperature quantum-dot semiconductor electro-absorption modulator is utilized as an optical group delay. Electrical (reverse and forward bias below transparency current level) and optical tunable buffer is realized by means of counter-propagating coherent population oscillation.

Slow and Fast Light (SL)•Jan 1, 2006•2 citations

Electrically Tunable Slow and Fast Light using Coherent Population Oscillations in Quantum Dot Semiconductor Optical Amplifier

Ali Rostami, A. Lotfian, Reza Yadipour +2 more

Coherent population oscillations (CPO) in quantum dots (QDs) have been utilized in this article to achieve slow and fast light effects in a semiconductor optical amplifier. These phenomena have been achieved based on a pump-probe scheme and tuning the input current source. Coupled rate equations have been developed to determine the carrier dynamics and occupation probabilities. The effects of barrier, wetting layer and excited state densities have been included for CPO phenomenon occurring between the ground states. A quantum disc model embedded in another disc has been assumed for modeling the QDs and density matrix elements are used to obtain induced polarization at the signal frequency after determining the energy states and state probabilities. Tunable absorption dip, corresponding refractive index variation and group index, exhibit widely tunable slow and fast light characteristics by changing the bias condition.

Journal of Optical Communications•Jan 14, 2013•1 citation

Room temperature slow and fast light in quantum-dot semiconductor optical amplifiers

Hui Su, Shun Lien Chuang

We demonstrate room temperature optically and electrically controllable group delay using population oscillation in a quantum-dot (QD) semiconductor optical amplifier (SOA). A reduction of the group index up to 10% with a bandwidth of 13 GHz is achieved under different configurations of injection current and optical pump intensity. Our theoretical results based on population pulsation agree well with experimental data. We extract the linewidth enhancement factor and effective carrier diffusion coefficient of the QD SOA. We also observe slow light when the injection current is increased.

Applied Physics Letters•Feb 3, 2006•77 citations

Room temperature variable slow light using semiconductor quantum dots

Piotr Konrad Kondratko, Hui Su, Shun Lien Chuang

We demonstrate slow light at room temperature using a quantum-dot semiconductor optical amplifier with a controllable delay by forward and reverse bias below the transparency current level.

Conference on Lasers and Electro-Optics•Jan 1, 2006•2 citations
We develop a model for slow light based on the coherent population oscillation of quantum dots at room temperature. With the absorption dip and corresponding variation of the refractive index due to the coherent population beating induced by the pump and probe signal, quantum dots can be used as a slow-light medium. Our theoretical model matches the experimental results very well. We also experimentally and theoretically demonstrate that both the forward-bias injection current and reverse-bias voltage can change the group index in a semiconductor quantum-dot waveguide. Our results indicate that quantum-dot devices can be potentially used as electrically and optically controllable slow light devices
We demonstrate room-temperature slow light that is electrically and optically controllable by using a quantum-dot (QD) semiconductor optical amplifier (SOA) at zero and low bias below the transparency current. The absorption spectrum of the QD SOA exhibits a spectral dip with a corresponding group-index dispersion and group delay owing to coherent population oscillation caused by the interaction of pump and probe laser light near resonance of the first heavy-hole-conduction-state transition. At an optical pump power of approximately 0.3 mW inside the single-mode waveguide without current injection, a group-index change of 3.0 with a bandwidth of 2 GHz was measured. This group-index change can be controlled by injection of electrical current and by changing the optical pump power.
This is a detailed study of slow light based on quantum effects in semiconductor nanostructures. We propose to implement an optical buffer using semiconductor quantum dots and quantum wells based on coherent population oscillation and spin related electromagnetically induced transparency. We identify different pump-and-probe schemes and develop comprehensive theoretical models which include important physical mechanisms in semiconductors. Semiconductors have unique properties which are inaccessible to other slow light media, and these enable the possibilities of controlling the semiconductor-based optical buffer in addition to the optical method. We investigate how to electrically control group index (slowdown factor) in quantum dots by using reverse bias voltage and forward injection current. We also develop a model to use the anisotropy of the light-hole exciton to vary the slowdown factor via two different mechanisms (coherent population oscillation and spin related electromagnetically induced transparency). Finally, we propose an idea to use the strain to control the spin relaxation time in semiconductors, which can help spin-dependent slow light in semiconductors. This research shows that the semiconductor is a promising candidate to demonstrate an optical buffer and can provide more flexible control than other slow light materials.
Coherent population oscillations (CPO) in quantum dots (QDs) have been utilized in this article to achieve slow and fast light effects in a semiconductor optical amplifier. These phenomena have been achieved based on a pump-probe scheme and tuning the input current source. Coupled rate equations have been developed to determine the carrier dynamics and occupation probabilities. The effects of barrier, wetting layer and excited state densities have been included for CPO phenomenon occurring between the ground states. A quantum disc model embedded in another disc has been assumed for modeling the QDs and density matrix elements are used to obtain induced polarization at the signal frequency after determining the energy states and state probabilities. Tunable absorption dip, corresponding refractive index variation and group index, exhibit widely tunable slow and fast light characteristics by changing the bias condition.
We demonstrate room temperature optically and electrically controllable group delay using population oscillation in a quantum-dot (QD) semiconductor optical amplifier (SOA). A reduction of the group index up to 10% with a bandwidth of 13 GHz is achieved under different configurations of injection current and optical pump intensity. Our theoretical results based on population pulsation agree well with experimental data. We extract the linewidth enhancement factor and effective carrier diffusion coefficient of the QD SOA. We also observe slow light when the injection current is increased.