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Proceedings of the IEEE

Variable optical buffer using slow light in semiconductor nanostructures

Connie J. Chang-Hasnain, C. C. Kuo, Jungho Kim, S. L. Chuang

Published Oct 31, 2003• 313 citations
Publisher

Abstract

A compact variable all-optical buffer using semiconductor quantum dot (QD) structures is proposed and analyzed. The buffering effect is achieved by slowing down the optical signal using an external control light source to vary the dispersion characteristic of the medium via an electromagnetically induced transparency effect. We present a theoretical investigation of the criteria for achieving slow light in semiconductor QDs. A QD structure in the presence of strain is analyzed with the inclusion of polarization-dependent intersubband dipole selection rules. Experimental methods to synthesize and the measurements of coherent properties in state-of-the-art QDs are surveyed. Slow-light effects in uniform and nonuniform QDs are compared. Finally, optical signal propagation through the semiconductor optical buffer is presented to demonstrate the feasibility for practical applications.

DOI
10.1109/jproc.2003.818335

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A compact variable all-optical buffer using semiconductor quantum dot (QD) structures is proposed and analyzed. The buffering effect is achieved by slowing down the optical signal using an external control light source to vary the dispersion characteristic of the medium via an electromagnetically induced transparency effect. We present a theoretical investigation of the criteria for achieving slow light in semiconductor QDs. A QD structure in the presence of strain is analyzed with the inclusion of polarization-dependent intersubband dipole selection rules. Experimental methods to synthesize and the measurements of coherent properties in state-of-the-art QDs are surveyed. Slow-light effects in uniform and nonuniform QDs are compared. Finally, optical signal propagation through the semiconductor optical buffer is presented to demonstrate the feasibility for practical applications.
We proposed a compact variable all-optical buffer using slow-light in semiconductor nanostructures. We discuss the general design principle via dispersion engineering. The buffering effect is achieved by slowing down the optical signal using an external control light source to vary the dispersion characteristic of the medium via electromagnetically induced transparency effect. We demonstrate that the semiconductor quantum dot structures can be used as a slow-light medium. In such structure, the total buffering time is variable and controlled by an external pump laser. We present a theoretical investigation of the criteria for achieving slow light in semiconductor quantum dots. New pump scheme is proposed to overcome the sample nonuniformity. Finally, optical signal propagation through the semiconductor optical buffer is presented to demonstrate the feasibility for practical applications.
This is a detailed study of slow light based on quantum effects in semiconductor nanostructures. We propose to implement an optical buffer using semiconductor quantum dots and quantum wells based on coherent population oscillation and spin related electromagnetically induced transparency. We identify different pump-and-probe schemes and develop comprehensive theoretical models which include important physical mechanisms in semiconductors. Semiconductors have unique properties which are inaccessible to other slow light media, and these enable the possibilities of controlling the semiconductor-based optical buffer in addition to the optical method. We investigate how to electrically control group index (slowdown factor) in quantum dots by using reverse bias voltage and forward injection current. We also develop a model to use the anisotropy of the light-hole exciton to vary the slowdown factor via two different mechanisms (coherent population oscillation and spin related electromagnetically induced transparency). Finally, we propose an idea to use the strain to control the spin relaxation time in semiconductors, which can help spin-dependent slow light in semiconductors. This research shows that the semiconductor is a promising candidate to demonstrate an optical buffer and can provide more flexible control than other slow light materials.
A variable semiconductor optical buffer based on the electromagnetically induced transparency in a quantum dot waveguide is theoretically investigated with feasible parameters for applications to a 40 Gbps optical network. We show the refractive index and absorption spectra of the quantum dot waveguide at various pump levels, which exhibit an optimal pump power for maximum slow-down factor, in agreement with the previous experimental observation using a Pr-doped solid. The group velocity slow-down factor is theoretically analysed as a function of the pump intensity at different broadened linewidths. Inhomogeneous broadening in self-assembled quantum dots degrades the slow-down factor. In order to reduce the inhomogeneous broadening effects, we propose to use a resonant microcavity structure with quantum dots embedded in the active layer to enhance the slow-down factor.
A variable semiconductor optical buffer based on the electromagnetically induced transparency (EIT) in a three level conical quantum dot system (CQD) is theoretically investigated. The system is interacting with two (control and signal) laser beams. Signal light with subluminal velocity is possible in such system through the quantum interference effect induced by the control pump field. We investigate the refractive index and absorption spectra of the QD waveguide at different pump levels, which exhibit an optimal pump power for maximum slow-down factor (SDF). The group velocity SDF is theoretically analyzed as a function of the pump intensity at different broadened line widths. The present study is based on the assumption that the medium is homogeneous. In this paper, a SDF as a function of CQD radius was studied. The simulation results indicate that the SDF increases with decreasing CQD radius.