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IEEE Lasers and Electro-Optics Society Annual Meeting (LEOS)

Slow-light in nonuniform quantum dot waveguide

C. C. Kuo, Connie J. Chang-Hasnain, Jungho Kim, S. L. Chuang

Published Aug 23, 2004• 2 citations
Publisher

Abstract

We analyzed a new variable all-optical buffer using semiconductor quantum dots (QD). We show that an InAs-InGaAs-GaAs QD waveguide with 20 meV inhomogeneous linewidth can achieve substantial buffering with a novel unbalanced multi-wavelength pumping scheme.
DOI
10.1109/leos.2003.1251898

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A variable semiconductor optical buffer based on the electromagnetically induced transparency in a quantum dot waveguide is theoretically investigated with feasible parameters for applications to a 40 Gbps optical network. We show the refractive index and absorption spectra of the quantum dot waveguide at various pump levels, which exhibit an optimal pump power for maximum slow-down factor, in agreement with the previous experimental observation using a Pr-doped solid. The group velocity slow-down factor is theoretically analysed as a function of the pump intensity at different broadened linewidths. Inhomogeneous broadening in self-assembled quantum dots degrades the slow-down factor. In order to reduce the inhomogeneous broadening effects, we propose to use a resonant microcavity structure with quantum dots embedded in the active layer to enhance the slow-down factor.
A compact variable all-optical buffer using semiconductor quantum dot (QD) structures is proposed and analyzed. The buffering effect is achieved by slowing down the optical signal using an external control light source to vary the dispersion characteristic of the medium via an electromagnetically induced transparency effect. We present a theoretical investigation of the criteria for achieving slow light in semiconductor QDs. A QD structure in the presence of strain is analyzed with the inclusion of polarization-dependent intersubband dipole selection rules. Experimental methods to synthesize and the measurements of coherent properties in state-of-the-art QDs are surveyed. Slow-light effects in uniform and nonuniform QDs are compared. Finally, optical signal propagation through the semiconductor optical buffer is presented to demonstrate the feasibility for practical applications.
We proposed a compact variable all-optical buffer using slow-light in semiconductor nanostructures. We discuss the general design principle via dispersion engineering. The buffering effect is achieved by slowing down the optical signal using an external control light source to vary the dispersion characteristic of the medium via electromagnetically induced transparency effect. We demonstrate that the semiconductor quantum dot structures can be used as a slow-light medium. In such structure, the total buffering time is variable and controlled by an external pump laser. We present a theoretical investigation of the criteria for achieving slow light in semiconductor quantum dots. New pump scheme is proposed to overcome the sample nonuniformity. Finally, optical signal propagation through the semiconductor optical buffer is presented to demonstrate the feasibility for practical applications.
This investigation experimentally demonstrates a tunable slow light device using a quantum dot (QD) semiconductor laser. The QD semiconductor laser at 1.3 mum fabricated on a GaAs substrate is grown by molecular beam epitaxy. Tunable slow light can be achieved by adjusting the bias current and wavelength detuning. The slow light device operated under probe signal from 5 to 10 GHz is presented. Moreover, we also demonstrate that the tunable slow light device can be used in a subcarrier multiplexed system.
Tunneling-induced transparency in vertically coupled InGaAs/GaAs quantum dots using tunneling instead of pump laser, analogous to electromagnetically induced transparency in atomic systems, is studied. The interdot quantum coupling strength is tuned by static electric fields. The group velocity slow-down factor is theoretically analyzed as a function of electron tunneling at different broadened linewidths. For parameters appropriate to a 100 Gbits/s optical network, group velocities as low as 850 m/s are calculated. The scheme is expected to be useful to construct a variable semiconductor optical buffer based on electromagnetically induced transparency in vertically coupled InGaAs/GaAs quantum dots controlled by electric fields.
The ability to manipulate the speed of light has recently become one of the most exciting emergent topics in optics. There are several experimental demonstrations showing the capability to slow down light more than six orders of magnitude in a variety of media, ranging from atomic vapor, solid state crystal, to semiconductors. These results have led to intensive research into new materials, devices, and system studies that examine their impact to new applications. It is believed that we are on the verge of a dramatic change in the way we envision and construct communication, processing and control systems. One direct application of slow and fast light devices is in the area of communications. One grand challenge remaining in information technology today is to store and buffer optical signals directly in optical format. As such, optical signals must be converted to electronic signals to route, switch, or be processed. This resulted in significant latencies and traffic congestions in current networks. In addition, keeping the data in optical domain during the routing process can greatly reduce the power, complexity and size of the routers. To this end, a controllable optical delay line can effectively function as an optical buffer, and the storage is proportional to the variability of the group velocity. In addition to optical buffers, slow and fast light devices can be used as tunable true-time delay elements in microwave photonics, which are important for remotely controlling phased array antenna. Other novel applications include nonlinear optics, optical signal processing, and quantum information processing. There are various approaches that can be used to vary the optical group velocity. Ultraslow or fast group velocity may result from a large material dispersion, waveguide dispersion, or both. In this paper, the authors provide a review of recent progress of slow and fast light using semiconductor devices. Specifically, they will discuss results obtained using semiconductor quantum-well/quantum-dot absorber and optical amplifiers. Slow and fast light are controllable electrically by changing the bias current or voltage as well as optically by changing the pump laser intensity and wavelength. Delay-bandwidth tradeoff and other figures of merits are analyzed