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Journal of Applied Physics

Slow light control with electric fields in vertically coupled InGaAs/GaAs quantum dots

Chun-Hua Yuan, Ka‐Di Zhu, Yiwen Jiang

Published Jul 15, 2007• 18 citations
Publisher

Abstract

Tunneling-induced transparency in vertically coupled InGaAs/GaAs quantum dots using tunneling instead of pump laser, analogous to electromagnetically induced transparency in atomic systems, is studied. The interdot quantum coupling strength is tuned by static electric fields. The group velocity slow-down factor is theoretically analyzed as a function of electron tunneling at different broadened linewidths. For parameters appropriate to a 100 Gbits/s optical network, group velocities as low as 850 m/s are calculated. The scheme is expected to be useful to construct a variable semiconductor optical buffer based on electromagnetically induced transparency in vertically coupled InGaAs/GaAs quantum dots controlled by electric fields.

DOI
10.1063/1.2761826

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Tunneling-induced transparency in vertically coupled InGaAs/GaAs quantum dots using tunneling instead of pump laser, analogous to electromagnetically induced transparency in atomic systems, is studied. The interdot quantum coupling strength is tuned by static electric fields. The group velocity slow-down factor is theoretically analyzed as a function of electron tunneling at different broadened linewidths. For parameters appropriate to a 100 Gbits/s optical network, group velocities as low as 850 m/s are calculated. The scheme is expected to be useful to construct a variable semiconductor optical buffer based on electromagnetically induced transparency in vertically coupled InGaAs/GaAs quantum dots controlled by electric fields.
The electronic states of InAs/GaAs quantum dot has investigated for vertically-aligned double conical quantum dots molecule (CQDM). We calculated Eigen energies as a function of external voltage, wetting layer thickness and inter-dot spacer. Tunneling-induced transparency (TIT) in vertically coupled InAs/GaAs quantum dots using tunneling instead of pump laser, analogous to electromagnetically induced transparency (EIT) in atomic systems, has studied. The inter-dot quantum coupling strength is tuned by static electric fields. For parameters appropriate to a 100 Gbits/s optical network, slow down factor (SDF) as 109 can be achieved. The scheme is expected to be useful to construct a variable semiconductor optical buffer based on TIT in vertically coupled InAs/GaAs quantum dots controlled by electric fields.
The electronic states of InAs/GaAs quantum dot has investigated for triple conical quantum dots molecule (CQDM). We calculated Eigen energies as a function of external voltage. Tunneling-induced transparency (TIT) in triple InAs/GaAs quantum dots using tunneling instead of pump laser, analogous to electromagnetically induced transparency (EIT) in atomic systems, has studied. The interdot quantum coupling strength is tuned by static electric fields. For parameters appropriate to a 100 Gbits/s optical network, slow down factor (SDF) as 109 can be achieved. The scheme is expected to be useful to construct a variable semiconductor optical buffer based on TIT in triple InAs/GaAs quantum dots controlled by electric fields.
The authors demonstrate theoretically that there exists electromagnetically induced transparency in an asymmetric double quantum dot system using tunneling instead of pump laser. The group velocity slowdown factor is theoretically analyzed as a function of electron tunneling at different broadened linewidths. With feasible parameters for applications to a 100Gbits∕s optical network, numerical calculation infers group velocity as low as 300m∕s. The scheme is expected to be useful in constructing a variable semiconductor optical buffer based on electromagnetically induced transparency in an asymmetric double quantum dot controlled by voltage.
A variable semiconductor optical buffer based on the electromagnetically induced transparency in a quantum dot waveguide is theoretically investigated with feasible parameters for applications to a 40 Gbps optical network. We show the refractive index and absorption spectra of the quantum dot waveguide at various pump levels, which exhibit an optimal pump power for maximum slow-down factor, in agreement with the previous experimental observation using a Pr-doped solid. The group velocity slow-down factor is theoretically analysed as a function of the pump intensity at different broadened linewidths. Inhomogeneous broadening in self-assembled quantum dots degrades the slow-down factor. In order to reduce the inhomogeneous broadening effects, we propose to use a resonant microcavity structure with quantum dots embedded in the active layer to enhance the slow-down factor.
Electromagnetic induced transparency is an optical phenomenon that allows transmission of a laser beam through a dense medium by using a control laser beam. Here, we propose the use of a quantum molecule where the control laser beam is replaced by the electron tunneling between quantum dots, which can be controlled by an external electric field, opening the possibility to induce transparency and slow light with electric gates. Our results show that a transparency window appears if the tunneling strength Te{T}_{e}Te​ and the decay rate of direct exciton ${\ensuremath{\Gamma}}_{1}$ obey the condition ${T}_{e}/{\ensuremath{\Gamma}}_{1}\ensuremath{\le}0.5$.
This is a detailed study of slow light based on quantum effects in semiconductor nanostructures. We propose to implement an optical buffer using semiconductor quantum dots and quantum wells based on coherent population oscillation and spin related electromagnetically induced transparency. We identify different pump-and-probe schemes and develop comprehensive theoretical models which include important physical mechanisms in semiconductors. Semiconductors have unique properties which are inaccessible to other slow light media, and these enable the possibilities of controlling the semiconductor-based optical buffer in addition to the optical method. We investigate how to electrically control group index (slowdown factor) in quantum dots by using reverse bias voltage and forward injection current. We also develop a model to use the anisotropy of the light-hole exciton to vary the slowdown factor via two different mechanisms (coherent population oscillation and spin related electromagnetically induced transparency). Finally, we propose an idea to use the strain to control the spin relaxation time in semiconductors, which can help spin-dependent slow light in semiconductors. This research shows that the semiconductor is a promising candidate to demonstrate an optical buffer and can provide more flexible control than other slow light materials.