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AIP conference proceedings

Slow light using tunneling-induced transparency in triple semiconductor conical quantum dot molecule

Nooralhuda S.Yaqoob, Sabah M. M. Ameen

Published Jan 1, 2020• 0 citations
Publisher

Abstract

The electronic states of InAs/GaAs quantum dot has investigated for triple conical quantum dots molecule (CQDM). We calculated Eigen energies as a function of external voltage. Tunneling-induced transparency (TIT) in triple InAs/GaAs quantum dots using tunneling instead of pump laser, analogous to electromagnetically induced transparency (EIT) in atomic systems, has studied. The interdot quantum coupling strength is tuned by static electric fields. For parameters appropriate to a 100 Gbits/s optical network, slow down factor (SDF) as 109 can be achieved. The scheme is expected to be useful to construct a variable semiconductor optical buffer based on TIT in triple InAs/GaAs quantum dots controlled by electric fields.

DOI
10.1063/5.0027451

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The electronic states of InAs/GaAs quantum dot has investigated for triple conical quantum dots molecule (CQDM). We calculated Eigen energies as a function of external voltage. Tunneling-induced transparency (TIT) in triple InAs/GaAs quantum dots using tunneling instead of pump laser, analogous to electromagnetically induced transparency (EIT) in atomic systems, has studied. The interdot quantum coupling strength is tuned by static electric fields. For parameters appropriate to a 100 Gbits/s optical network, slow down factor (SDF) as 109 can be achieved. The scheme is expected to be useful to construct a variable semiconductor optical buffer based on TIT in triple InAs/GaAs quantum dots controlled by electric fields.
The electronic states of InAs/GaAs quantum dot has investigated for vertically-aligned double conical quantum dots molecule (CQDM). We calculated Eigen energies as a function of external voltage, wetting layer thickness and inter-dot spacer. Tunneling-induced transparency (TIT) in vertically coupled InAs/GaAs quantum dots using tunneling instead of pump laser, analogous to electromagnetically induced transparency (EIT) in atomic systems, has studied. The inter-dot quantum coupling strength is tuned by static electric fields. For parameters appropriate to a 100 Gbits/s optical network, slow down factor (SDF) as 109 can be achieved. The scheme is expected to be useful to construct a variable semiconductor optical buffer based on TIT in vertically coupled InAs/GaAs quantum dots controlled by electric fields.
Tunneling-induced transparency in vertically coupled InGaAs/GaAs quantum dots using tunneling instead of pump laser, analogous to electromagnetically induced transparency in atomic systems, is studied. The interdot quantum coupling strength is tuned by static electric fields. The group velocity slow-down factor is theoretically analyzed as a function of electron tunneling at different broadened linewidths. For parameters appropriate to a 100 Gbits/s optical network, group velocities as low as 850 m/s are calculated. The scheme is expected to be useful to construct a variable semiconductor optical buffer based on electromagnetically induced transparency in vertically coupled InGaAs/GaAs quantum dots controlled by electric fields.
Slow light Transparency window can be achieved with the help of Electromagnetically Induced Transparency (EIT) method and Tunneling Induced Transparency (TIT) method accompanied by observing tunneling effect between InAs quantum dot structure with energy gap of 0.35ev and a thin layer of GaAs potential barrier with energy gap of 1.42ev. By investigating different parameters such as group velocity and Slow Down Factor (SDF) coefficient at different detuning frequencies, we have obtained an improved design in tunneling and identifying some better conditions. Under TIT condition, the SDF parameter has improved to the amount of 3.2 × 106.
The authors demonstrate theoretically that there exists electromagnetically induced transparency in an asymmetric double quantum dot system using tunneling instead of pump laser. The group velocity slowdown factor is theoretically analyzed as a function of electron tunneling at different broadened linewidths. With feasible parameters for applications to a 100Gbits∕s optical network, numerical calculation infers group velocity as low as 300m∕s. The scheme is expected to be useful in constructing a variable semiconductor optical buffer based on electromagnetically induced transparency in an asymmetric double quantum dot controlled by voltage.
A variable semiconductor optical buffer based on the electromagnetically induced transparency (EIT) in a three level conical quantum dot system (CQD) is theoretically investigated. The system is interacting with two (control and signal) laser beams. Signal light with subluminal velocity is possible in such system through the quantum interference effect induced by the control pump field. We investigate the refractive index and absorption spectra of the QD waveguide at different pump levels, which exhibit an optimal pump power for maximum slow-down factor (SDF). The group velocity SDF is theoretically analyzed as a function of the pump intensity at different broadened line widths. The present study is based on the assumption that the medium is homogeneous. In this paper, a SDF as a function of CQD radius was studied. The simulation results indicate that the SDF increases with decreasing CQD radius.
Electromagnetic induced transparency is an optical phenomenon that allows transmission of a laser beam through a dense medium by using a control laser beam. Here, we propose the use of a quantum molecule where the control laser beam is replaced by the electron tunneling between quantum dots, which can be controlled by an external electric field, opening the possibility to induce transparency and slow light with electric gates. Our results show that a transparency window appears if the tunneling strength Te{T}_{e}Te​ and the decay rate of direct exciton ${\ensuremath{\Gamma}}_{1}$ obey the condition ${T}_{e}/{\ensuremath{\Gamma}}_{1}\ensuremath{\le}0.5$.