Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

Design and Analysis of Slow Light Device based on Double Quantum Dots Tunneling Induced Transparency

Hossein Mardani, Hassan Kaatuzian, Bahram Choupanzadeh

Published Sep 13, 2021• 1 citation
Publisher

Abstract

Slow light Transparency window can be achieved with the help of Electromagnetically Induced Transparency (EIT) method and Tunneling Induced Transparency (TIT) method accompanied by observing tunneling effect between InAs quantum dot structure with energy gap of 0.35ev and a thin layer of GaAs potential barrier with energy gap of 1.42ev. By investigating different parameters such as group velocity and Slow Down Factor (SDF) coefficient at different detuning frequencies, we have obtained an improved design in tunneling and identifying some better conditions. Under TIT condition, the SDF parameter has improved to the amount of 3.2 × 106.

DOI
10.1109/nusod52207.2021.9541445

Related papers

Performance improvement of quantum dots slow light devices based on tunneling induced transparency method

Bahram Choupanzadeh, Hassan Kaatuzian

In this paper we analyze the structure of two types of quantum dots slow light devices. The first model is slow light devices based on coherent population oscillation (CPO), in this method, slow light device has a pump and signal, the simulation results in the form of curves with refractive index, absorption and slow down factor based on detuning changes is estimated. In the second model, with tunneling induced transparency (TIT) method, slow light device has an electric voltage. The simulation results in the form of curves with refractive index, absorption and Vg/C based on alteration photon energy is plotted. For better comparison with CPO method, in the next step, SDF curve is plotted for slow light device based on TIT. According to this figure, it can be realized that the amount of SDF for slow light using TIT are much higher than the amount of SDF for slow light using CPO. And finally we obtained maximum SDF variations as a function of radius of quantum dots, for both methods. According to this curve, when radius is 4 nm, SDF with slow light device based on TIT, 76 times higher than SDF with slow light device based on CPO and it can be noticed that the maximum SDF and radius of quantum dots, has reverse proportion.

Iranian Conference on Electrical Engineering•May 1, 2017•1 citation

Voltage-Controlled Slow Light via Resonant Tunneling Induced Transparency in Vertically aligned Conical Double Quantum Dot Molecules

Nooralhuda S.Yaqoob, Sabah M. M. Ameen

The electronic states of InAs/GaAs quantum dot has investigated for vertically-aligned double conical quantum dots molecule (CQDM). We calculated Eigen energies as a function of external voltage, wetting layer thickness and inter-dot spacer. Tunneling-induced transparency (TIT) in vertically coupled InAs/GaAs quantum dots using tunneling instead of pump laser, analogous to electromagnetically induced transparency (EIT) in atomic systems, has studied. The inter-dot quantum coupling strength is tuned by static electric fields. For parameters appropriate to a 100 Gbits/s optical network, slow down factor (SDF) as 109 can be achieved. The scheme is expected to be useful to construct a variable semiconductor optical buffer based on TIT in vertically coupled InAs/GaAs quantum dots controlled by electric fields.

•Jan 1, 2019•0 citations

Slow light using tunneling-induced transparency in triple semiconductor conical quantum dot molecule

Nooralhuda S.Yaqoob, Sabah M. M. Ameen

The electronic states of InAs/GaAs quantum dot has investigated for triple conical quantum dots molecule (CQDM). We calculated Eigen energies as a function of external voltage. Tunneling-induced transparency (TIT) in triple InAs/GaAs quantum dots using tunneling instead of pump laser, analogous to electromagnetically induced transparency (EIT) in atomic systems, has studied. The interdot quantum coupling strength is tuned by static electric fields. For parameters appropriate to a 100 Gbits/s optical network, slow down factor (SDF) as 109 can be achieved. The scheme is expected to be useful to construct a variable semiconductor optical buffer based on TIT in triple InAs/GaAs quantum dots controlled by electric fields.

AIP conference proceedings•Jan 1, 2020•0 citations

Tunable slow light in quantum dot molecule-embedded coupled cavities with photothermal effect

Jinzhao Xu, Xiaolei Liu, Ke Huang +4 more

The system optical response in quantum dot molecule (QDM)-embedded coupled cavities with photothermal effect is investigated theoretically. Couple resonator-induced transparency can be found first when only considering the photon tunneling between the double cavities. After implanting QDMs with tunneling effects into the right cavity, three transparency windows are observed due to QDMs and tunneling-induced transparency (TIT) therein. The fourth transparency window is formed due to photothermally induced transparency (PTIT). The results indicate the system absorption can be tuned by changing the system coupling strengths and frequency detunings. Furthermore, the transmission and group delay of the probe field are examined. Especially, the group delay in different transparency windows can be adjusted by the tunneling effect in the QDMs, and the group delay in PTIT can also be controlled by the system coupling strengths, etc. The research provides a new way of using the TIT to control the PTIT, which may be applied to design novel nanophotonic devices.

Journal of the Optical Society of America B•Oct 24, 2025•1 citation

Analysis and simulation of strained quantum wells slow light devices according to V-type EIT

Saeed Abdolhosseini, Hassan Kaatuzian, Bahram Choupanzadeh

This article investigates and improves optical properties of slow light devices. The device structure consists GaAs/AlGaAs [110] strained quantum wells (QWs) based on V-type electromagnetically induced transparency (EIT). In this paper, we use an analytical model in fractional dimension in order to simulate and analysis slow light device. Effects of well width variation have been investigated on exciton oscillator strength (EOS) and fractional dimension parameter. Influences of these parameters alterations have been illustrated in optical properties of slow light system such as slow down factor (SDF) and central energy of the device. Based on obtained results, we can adjust optical variables of slow light system with controlling the well thickness. Using proposed method, we have also estimated the maximum value of SDF about 9×103.

Iranian Conference on Electrical Engineering•May 1, 2017•1 citation

Voltage-controlled slow light in asymmetry double quantum dots

Chun-Hua Yuan, Ka‐Di Zhu

The authors demonstrate theoretically that there exists electromagnetically induced transparency in an asymmetric double quantum dot system using tunneling instead of pump laser. The group velocity slowdown factor is theoretically analyzed as a function of electron tunneling at different broadened linewidths. With feasible parameters for applications to a 100Gbits∕s optical network, numerical calculation infers group velocity as low as 300m∕s. The scheme is expected to be useful in constructing a variable semiconductor optical buffer based on electromagnetically induced transparency in an asymmetric double quantum dot controlled by voltage.

Applied Physics Letters•Jul 31, 2006•113 citations
Slow light Transparency window can be achieved with the help of Electromagnetically Induced Transparency (EIT) method and Tunneling Induced Transparency (TIT) method accompanied by observing tunneling effect between InAs quantum dot structure with energy gap of 0.35ev and a thin layer of GaAs potential barrier with energy gap of 1.42ev. By investigating different parameters such as group velocity and Slow Down Factor (SDF) coefficient at different detuning frequencies, we have obtained an improved design in tunneling and identifying some better conditions. Under TIT condition, the SDF parameter has improved to the amount of 3.2 × 106.
In this paper we analyze the structure of two types of quantum dots slow light devices. The first model is slow light devices based on coherent population oscillation (CPO), in this method, slow light device has a pump and signal, the simulation results in the form of curves with refractive index, absorption and slow down factor based on detuning changes is estimated. In the second model, with tunneling induced transparency (TIT) method, slow light device has an electric voltage. The simulation results in the form of curves with refractive index, absorption and Vg/C based on alteration photon energy is plotted. For better comparison with CPO method, in the next step, SDF curve is plotted for slow light device based on TIT. According to this figure, it can be realized that the amount of SDF for slow light using TIT are much higher than the amount of SDF for slow light using CPO. And finally we obtained maximum SDF variations as a function of radius of quantum dots, for both methods. According to this curve, when radius is 4 nm, SDF with slow light device based on TIT, 76 times higher than SDF with slow light device based on CPO and it can be noticed that the maximum SDF and radius of quantum dots, has reverse proportion.
The electronic states of InAs/GaAs quantum dot has investigated for vertically-aligned double conical quantum dots molecule (CQDM). We calculated Eigen energies as a function of external voltage, wetting layer thickness and inter-dot spacer. Tunneling-induced transparency (TIT) in vertically coupled InAs/GaAs quantum dots using tunneling instead of pump laser, analogous to electromagnetically induced transparency (EIT) in atomic systems, has studied. The inter-dot quantum coupling strength is tuned by static electric fields. For parameters appropriate to a 100 Gbits/s optical network, slow down factor (SDF) as 109 can be achieved. The scheme is expected to be useful to construct a variable semiconductor optical buffer based on TIT in vertically coupled InAs/GaAs quantum dots controlled by electric fields.
The electronic states of InAs/GaAs quantum dot has investigated for triple conical quantum dots molecule (CQDM). We calculated Eigen energies as a function of external voltage. Tunneling-induced transparency (TIT) in triple InAs/GaAs quantum dots using tunneling instead of pump laser, analogous to electromagnetically induced transparency (EIT) in atomic systems, has studied. The interdot quantum coupling strength is tuned by static electric fields. For parameters appropriate to a 100 Gbits/s optical network, slow down factor (SDF) as 109 can be achieved. The scheme is expected to be useful to construct a variable semiconductor optical buffer based on TIT in triple InAs/GaAs quantum dots controlled by electric fields.
The system optical response in quantum dot molecule (QDM)-embedded coupled cavities with photothermal effect is investigated theoretically. Couple resonator-induced transparency can be found first when only considering the photon tunneling between the double cavities. After implanting QDMs with tunneling effects into the right cavity, three transparency windows are observed due to QDMs and tunneling-induced transparency (TIT) therein. The fourth transparency window is formed due to photothermally induced transparency (PTIT). The results indicate the system absorption can be tuned by changing the system coupling strengths and frequency detunings. Furthermore, the transmission and group delay of the probe field are examined. Especially, the group delay in different transparency windows can be adjusted by the tunneling effect in the QDMs, and the group delay in PTIT can also be controlled by the system coupling strengths, etc. The research provides a new way of using the TIT to control the PTIT, which may be applied to design novel nanophotonic devices.
This article investigates and improves optical properties of slow light devices. The device structure consists GaAs/AlGaAs [110] strained quantum wells (QWs) based on V-type electromagnetically induced transparency (EIT). In this paper, we use an analytical model in fractional dimension in order to simulate and analysis slow light device. Effects of well width variation have been investigated on exciton oscillator strength (EOS) and fractional dimension parameter. Influences of these parameters alterations have been illustrated in optical properties of slow light system such as slow down factor (SDF) and central energy of the device. Based on obtained results, we can adjust optical variables of slow light system with controlling the well thickness. Using proposed method, we have also estimated the maximum value of SDF about 9×103.
The authors demonstrate theoretically that there exists electromagnetically induced transparency in an asymmetric double quantum dot system using tunneling instead of pump laser. The group velocity slowdown factor is theoretically analyzed as a function of electron tunneling at different broadened linewidths. With feasible parameters for applications to a 100Gbits∕s optical network, numerical calculation infers group velocity as low as 300m∕s. The scheme is expected to be useful in constructing a variable semiconductor optical buffer based on electromagnetically induced transparency in an asymmetric double quantum dot controlled by voltage.