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Iranian Conference on Electrical Engineering

Performance improvement of quantum dots slow light devices based on tunneling induced transparency method

Bahram Choupanzadeh, Hassan Kaatuzian

Published May 1, 2017• 1 citation
Publisher

Abstract

In this paper we analyze the structure of two types of quantum dots slow light devices. The first model is slow light devices based on coherent population oscillation (CPO), in this method, slow light device has a pump and signal, the simulation results in the form of curves with refractive index, absorption and slow down factor based on detuning changes is estimated. In the second model, with tunneling induced transparency (TIT) method, slow light device has an electric voltage. The simulation results in the form of curves with refractive index, absorption and Vg/C based on alteration photon energy is plotted. For better comparison with CPO method, in the next step, SDF curve is plotted for slow light device based on TIT. According to this figure, it can be realized that the amount of SDF for slow light using TIT are much higher than the amount of SDF for slow light using CPO. And finally we obtained maximum SDF variations as a function of radius of quantum dots, for both methods. According to this curve, when radius is 4 nm, SDF with slow light device based on TIT, 76 times higher than SDF with slow light device based on CPO and it can be noticed that the maximum SDF and radius of quantum dots, has reverse proportion.

DOI
10.1109/iraniancee.2017.7985102

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In this paper we analyze the structure of two types of quantum dots slow light devices. The first model is slow light devices based on coherent population oscillation (CPO), in this method, slow light device has a pump and signal, the simulation results in the form of curves with refractive index, absorption and slow down factor based on detuning changes is estimated. In the second model, with tunneling induced transparency (TIT) method, slow light device has an electric voltage. The simulation results in the form of curves with refractive index, absorption and Vg/C based on alteration photon energy is plotted. For better comparison with CPO method, in the next step, SDF curve is plotted for slow light device based on TIT. According to this figure, it can be realized that the amount of SDF for slow light using TIT are much higher than the amount of SDF for slow light using CPO. And finally we obtained maximum SDF variations as a function of radius of quantum dots, for both methods. According to this curve, when radius is 4 nm, SDF with slow light device based on TIT, 76 times higher than SDF with slow light device based on CPO and it can be noticed that the maximum SDF and radius of quantum dots, has reverse proportion.
In this paper we simulate and analyze a sample of slow light semiconducting device with quantum dot structure based on coherent population oscillation (CPO). The simulation is conducted to enhance the main parameters of slow light device and a method is presented for setting the output specifications of this kind of devices. In this paper, we deal with changing the size of quantum dot to find the ideal size. The simulation results indicate that as the size of quantum dot changes properly (with reducing more than 50 percent of quantum dots both radius and height), then the slope of diagram of the real part of refractive index increases significantly so that the Slow Down Factor (SDF) predicted to be18 times greater. Analysis and simulations based on cylinderical quantum dots structure slow light devices based on exitonic cpo.
Slow light Transparency window can be achieved with the help of Electromagnetically Induced Transparency (EIT) method and Tunneling Induced Transparency (TIT) method accompanied by observing tunneling effect between InAs quantum dot structure with energy gap of 0.35ev and a thin layer of GaAs potential barrier with energy gap of 1.42ev. By investigating different parameters such as group velocity and Slow Down Factor (SDF) coefficient at different detuning frequencies, we have obtained an improved design in tunneling and identifying some better conditions. Under TIT condition, the SDF parameter has improved to the amount of 3.2 × 106.
This article investigates and improves optical properties of slow light devices. The device structure consists GaAs/AlGaAs [110] strained quantum wells (QWs) based on V-type electromagnetically induced transparency (EIT). In this paper, we use an analytical model in fractional dimension in order to simulate and analysis slow light device. Effects of well width variation have been investigated on exciton oscillator strength (EOS) and fractional dimension parameter. Influences of these parameters alterations have been illustrated in optical properties of slow light system such as slow down factor (SDF) and central energy of the device. Based on obtained results, we can adjust optical variables of slow light system with controlling the well thickness. Using proposed method, we have also estimated the maximum value of SDF about 9×103.
We develop a model for slow light based on the coherent population oscillation of quantum dots at room temperature. With the absorption dip and corresponding variation of the refractive index due to the coherent population beating induced by the pump and probe signal, quantum dots can be used as a slow-light medium. Our theoretical model matches the experimental results very well. We also experimentally and theoretically demonstrate that both the forward-bias injection current and reverse-bias voltage can change the group index in a semiconductor quantum-dot waveguide. Our results indicate that quantum-dot devices can be potentially used as electrically and optically controllable slow light devices
Coherent population oscillation (CPO) is a successful method used to implement semiconductorbased slow light using the coherent pump-probe effect. The first demonstration was carried out in semiconductormultiple quantumwells (MQWs) [1-3] soon after the experimental demonstration of slow light in ruby crystal [4,5]. Later, slow light based on CPO in semiconductor QWs and quantum dots (QDs)was also successfully demonstrated at room temperature [6-10], and the slow-light regime was soon extended to the corresponding fast-light regime in semiconductor gainmedia [11-17] using a semiconductor optical amplifier (SOA) alone or combined with an electroabsorbtion (EA) section. The basicworking principle of slow light based onmost pump-probe schemes is to decrease the group velocity vg using the sharp variation of the refractive index ∂n′/∂ω within a narrow frequency range: vg = c ng = c n′ + ω ∂n′ , (2.1) where ng = n′ + ω∂n′/∂ω is the group index n′ is the real part of the refractive index n For the CPO case, the required sharp variation of the refractive index originates from the population oscillation induced by the pump and probe signals applied to a two-level system, as indicated in Figure 2.1. The induced population oscillation generates a new polarization component and changes the susceptibility and thus the refractive index experienced by the signal. In semiconductor quantum structures, this two-level system can be the heavy-hole (HH) exciton [1-3,6,18] of QWs and QDs, or the valence and conductionground states of QDs [18,19]. In principle, as long as the optical transition between the two states is dipole-allowed, the slow light based on CPO can be implemented.
The electronic states of InAs/GaAs quantum dot has investigated for triple conical quantum dots molecule (CQDM). We calculated Eigen energies as a function of external voltage. Tunneling-induced transparency (TIT) in triple InAs/GaAs quantum dots using tunneling instead of pump laser, analogous to electromagnetically induced transparency (EIT) in atomic systems, has studied. The interdot quantum coupling strength is tuned by static electric fields. For parameters appropriate to a 100 Gbits/s optical network, slow down factor (SDF) as 109 can be achieved. The scheme is expected to be useful to construct a variable semiconductor optical buffer based on TIT in triple InAs/GaAs quantum dots controlled by electric fields.