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Physical Review B

Tunneling induced transparency and slow light in quantum dot molecules

Halyne Silva Borges, L. Sanz, J. M. Villas-Bôas, O. O. Diniz Neto, Augusto M. Alcalde

Published Mar 20, 2012• 144 citations
Publisher

Abstract

Electromagnetic induced transparency is an optical phenomenon that allows transmission of a laser beam through a dense medium by using a control laser beam. Here, we propose the use of a quantum molecule where the control laser beam is replaced by the electron tunneling between quantum dots, which can be controlled by an external electric field, opening the possibility to induce transparency and slow light with electric gates. Our results show that a transparency window appears if the tunneling strength ${T}_{e}$ and the decay rate of direct exciton ${\ensuremath{\Gamma}}_{1}$ obey the condition ${T}_{e}/{\ensuremath{\Gamma}}_{1}\ensuremath{\le}0.5$.

DOI
10.1103/physrevb.85.115425

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Electromagnetic induced transparency is an optical phenomenon that allows transmission of a laser beam through a dense medium by using a control laser beam. Here, we propose the use of a quantum molecule where the control laser beam is replaced by the electron tunneling between quantum dots, which can be controlled by an external electric field, opening the possibility to induce transparency and slow light with electric gates. Our results show that a transparency window appears if the tunneling strength Te{T}_{e}Te​ and the decay rate of direct exciton \ensuremathΓ1{\ensuremath{\Gamma}}_{1}\ensuremathΓ1​ obey the condition Te/\ensuremathΓ1\ensuremath≤0.5{T}_{e}/{\ensuremath{\Gamma}}_{1}\ensuremath{\le}0.5Te​/\ensuremathΓ1​\ensuremath≤0.5.
The electronic states of InAs/GaAs quantum dot has investigated for triple conical quantum dots molecule (CQDM). We calculated Eigen energies as a function of external voltage. Tunneling-induced transparency (TIT) in triple InAs/GaAs quantum dots using tunneling instead of pump laser, analogous to electromagnetically induced transparency (EIT) in atomic systems, has studied. The interdot quantum coupling strength is tuned by static electric fields. For parameters appropriate to a 100 Gbits/s optical network, slow down factor (SDF) as 109 can be achieved. The scheme is expected to be useful to construct a variable semiconductor optical buffer based on TIT in triple InAs/GaAs quantum dots controlled by electric fields.
Tunneling-induced transparency in vertically coupled InGaAs/GaAs quantum dots using tunneling instead of pump laser, analogous to electromagnetically induced transparency in atomic systems, is studied. The interdot quantum coupling strength is tuned by static electric fields. The group velocity slow-down factor is theoretically analyzed as a function of electron tunneling at different broadened linewidths. For parameters appropriate to a 100 Gbits/s optical network, group velocities as low as 850 m/s are calculated. The scheme is expected to be useful to construct a variable semiconductor optical buffer based on electromagnetically induced transparency in vertically coupled InGaAs/GaAs quantum dots controlled by electric fields.
The electronic states of InAs/GaAs quantum dot has investigated for vertically-aligned double conical quantum dots molecule (CQDM). We calculated Eigen energies as a function of external voltage, wetting layer thickness and inter-dot spacer. Tunneling-induced transparency (TIT) in vertically coupled InAs/GaAs quantum dots using tunneling instead of pump laser, analogous to electromagnetically induced transparency (EIT) in atomic systems, has studied. The inter-dot quantum coupling strength is tuned by static electric fields. For parameters appropriate to a 100 Gbits/s optical network, slow down factor (SDF) as 109 can be achieved. The scheme is expected to be useful to construct a variable semiconductor optical buffer based on TIT in vertically coupled InAs/GaAs quantum dots controlled by electric fields.
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Optical precursors generated in a quantum-dot-molecule system by an incident square-modulated pulse are theoretically investigated. Voltage-controlled electron tunneling couples two quantum dots instead of a laser field, and a narrow transparency window appears with normal dispersion. The main pulse is delayed due to slow-light effect and the precursor pulses are obtained. We examine the linear susceptibility and find that its one part exhibits normal dispersion and the other one presents anomalous dispersion. Competition between the two parts leads to normal dispersion for the linear susceptibility, which contributes to the above results. Voltage-controlled precursors may be useful to design novel optical devices for generating precursors.
We investigate the optical properties appearing in a nanostructure that is composed of an asymmetric double semiconductor quantum dot (SQD) molecule and a metal nanoparticle (MNP). The profile of the total linear absorption spectrum is proportional to the SQD contribution, while the MNP contribution is important. The profile of the doublet of resonances detected on the total linear absorption spectrum creates a transparency window. The doublet is asymmetric for small SQD-MNP distances and has a narrow peak and a wide peak. The width of the transparency window is increased, either with the enhancement of the rate at which the electron tunneling effect takes place within the double SQD molecule or with the decrease of the distance that separates the SQD molecule from the center of the MNP. The steep slope detected on the linear dispersion spectrum for frequencies laying within the transparency window owes its presence to the tunneling induced transparency and leads to slow light production. The corresponding value of the slow down factor is maximized for low values of the electron tunneling rate as well as for low center-to-center distances between the components of the hybrid nanostructure.