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Journal of Modern Optics

Voltage-controlled optical precursors in quantum dot molecules

Yandong Peng, Aihong Yang, Dehua Li, Xinghua Zhao, Lin Cheng Jiang, Luyin Zhang

Published Sep 20, 2013• 3 citations
Publisher

Abstract

Optical precursors generated in a quantum-dot-molecule system by an incident square-modulated pulse are theoretically investigated. Voltage-controlled electron tunneling couples two quantum dots instead of a laser field, and a narrow transparency window appears with normal dispersion. The main pulse is delayed due to slow-light effect and the precursor pulses are obtained. We examine the linear susceptibility and find that its one part exhibits normal dispersion and the other one presents anomalous dispersion. Competition between the two parts leads to normal dispersion for the linear susceptibility, which contributes to the above results. Voltage-controlled precursors may be useful to design novel optical devices for generating precursors.

DOI
10.1080/09500340.2013.839060

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Optical precursors generated in a quantum-dot-molecule system by an incident square-modulated pulse are theoretically investigated. Voltage-controlled electron tunneling couples two quantum dots instead of a laser field, and a narrow transparency window appears with normal dispersion. The main pulse is delayed due to slow-light effect and the precursor pulses are obtained. We examine the linear susceptibility and find that its one part exhibits normal dispersion and the other one presents anomalous dispersion. Competition between the two parts leads to normal dispersion for the linear susceptibility, which contributes to the above results. Voltage-controlled precursors may be useful to design novel optical devices for generating precursors.
We analyze the interaction of a triple quantum dot molecules controlled by the tunneling coupling instead of coupling laser. A general analytic expression for the steady-state linear susceptibility for a probe-laser field is obtained and we show that the system can exhibit two transparency windows. The group velocity of the probe-laser pulse is also analyzed. By changing the tunneling couplings, two laser pulses with different central frequency can propagate with the same group velocity. And the group velocity can be as low as 300 m/s in our system. We extend our analysis to the case of multiple quantum dot molecules (the number of the quantum dots is N) and show that the system can exhibit at most N-1 transparency windows. And at most N-1 laser pulses with different central frequencies can be slowed down.
A scheme for separating optical precursors from a square-modulated laser pulse through an asymmetric double ${\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}$As/GaAs quantum-well structure via resonant tunneling is proposed. Destructive interference inhibits linear absorption, and a tunneling-induced transparency (TIT) window appears with normal dispersion, which delays the main pulse; then optical precursors are obtained. Due to resonant tunneling, constructive interference for nonlinear susceptibility is created. The enhanced dispersion in a narrow TIT window is about one order of magnitude larger than that of the linear case. In this case, the main pulse is much delayed and the precursor signals are easier to obtain. Moreover, the main pulse builds up due to the gain introduced by the enhanced cross-nonlinearity.
Electromagnetic induced transparency is an optical phenomenon that allows transmission of a laser beam through a dense medium by using a control laser beam. Here, we propose the use of a quantum molecule where the control laser beam is replaced by the electron tunneling between quantum dots, which can be controlled by an external electric field, opening the possibility to induce transparency and slow light with electric gates. Our results show that a transparency window appears if the tunneling strength Te{T}_{e}Te​ and the decay rate of direct exciton ${\ensuremath{\Gamma}}_{1}$ obey the condition ${T}_{e}/{\ensuremath{\Gamma}}_{1}\ensuremath{\le}0.5$.
The electronic states of InAs/GaAs quantum dot has investigated for vertically-aligned double conical quantum dots molecule (CQDM). We calculated Eigen energies as a function of external voltage, wetting layer thickness and inter-dot spacer. Tunneling-induced transparency (TIT) in vertically coupled InAs/GaAs quantum dots using tunneling instead of pump laser, analogous to electromagnetically induced transparency (EIT) in atomic systems, has studied. The inter-dot quantum coupling strength is tuned by static electric fields. For parameters appropriate to a 100 Gbits/s optical network, slow down factor (SDF) as 109 can be achieved. The scheme is expected to be useful to construct a variable semiconductor optical buffer based on TIT in vertically coupled InAs/GaAs quantum dots controlled by electric fields.
The authors demonstrate theoretically that there exists electromagnetically induced transparency in an asymmetric double quantum dot system using tunneling instead of pump laser. The group velocity slowdown factor is theoretically analyzed as a function of electron tunneling at different broadened linewidths. With feasible parameters for applications to a 100Gbits∕s optical network, numerical calculation infers group velocity as low as 300m∕s. The scheme is expected to be useful in constructing a variable semiconductor optical buffer based on electromagnetically induced transparency in an asymmetric double quantum dot controlled by voltage.
Tunneling-induced transparency in vertically coupled InGaAs/GaAs quantum dots using tunneling instead of pump laser, analogous to electromagnetically induced transparency in atomic systems, is studied. The interdot quantum coupling strength is tuned by static electric fields. The group velocity slow-down factor is theoretically analyzed as a function of electron tunneling at different broadened linewidths. For parameters appropriate to a 100 Gbits/s optical network, group velocities as low as 850 m/s are calculated. The scheme is expected to be useful to construct a variable semiconductor optical buffer based on electromagnetically induced transparency in vertically coupled InGaAs/GaAs quantum dots controlled by electric fields.