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Journal of Kufa Physics

Variable Optical Buffer Using EIT in Three Level System Based on Semiconductor Conical Quantum Dots

Nooralhuda S.Yaqoob, Sabah M. M. Ameen

Published Jun 10, 2020• 1 citation
Publisher

Abstract

A variable semiconductor optical buffer based on the electromagnetically induced transparency (EIT) in a three level conical quantum dot system (CQD) is theoretically investigated. The system is interacting with two (control and signal) laser beams. Signal light with subluminal velocity is possible in such system through the quantum interference effect induced by the control pump field. We investigate the refractive index and absorption spectra of the QD waveguide at different pump levels, which exhibit an optimal pump power for maximum slow-down factor (SDF). The group velocity SDF is theoretically analyzed as a function of the pump intensity at different broadened line widths. The present study is based on the assumption that the medium is homogeneous. In this paper, a SDF as a function of CQD radius was studied. The simulation results indicate that the SDF increases with decreasing CQD radius.

DOI
10.31257/2018/jkp/2020/120108

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A variable semiconductor optical buffer based on the electromagnetically induced transparency in a quantum dot waveguide is theoretically investigated with feasible parameters for applications to a 40 Gbps optical network. We show the refractive index and absorption spectra of the quantum dot waveguide at various pump levels, which exhibit an optimal pump power for maximum slow-down factor, in agreement with the previous experimental observation using a Pr-doped solid. The group velocity slow-down factor is theoretically analysed as a function of the pump intensity at different broadened linewidths. Inhomogeneous broadening in self-assembled quantum dots degrades the slow-down factor. In order to reduce the inhomogeneous broadening effects, we propose to use a resonant microcavity structure with quantum dots embedded in the active layer to enhance the slow-down factor.
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A compact variable all-optical buffer using semiconductor quantum dot (QD) structures is proposed and analyzed. The buffering effect is achieved by slowing down the optical signal using an external control light source to vary the dispersion characteristic of the medium via an electromagnetically induced transparency effect. We present a theoretical investigation of the criteria for achieving slow light in semiconductor QDs. A QD structure in the presence of strain is analyzed with the inclusion of polarization-dependent intersubband dipole selection rules. Experimental methods to synthesize and the measurements of coherent properties in state-of-the-art QDs are surveyed. Slow-light effects in uniform and nonuniform QDs are compared. Finally, optical signal propagation through the semiconductor optical buffer is presented to demonstrate the feasibility for practical applications.
Slow light with electromagnetically induced transparency (EIT) in the core of cylindrical waveguide (CW) for an optical fiber system containing three-level atoms is investigated. The CW modes are treated in the weakly guiding approximation which renders the analysis into manageable form. The transparency window and permittivity profile of the waveguide due to the strong pump field in the EIT scheme is calculated. For a specific permittivity profile of the waveguide due to EIT, the propagation constant of the weak signal field and spatial shape of fundamental guided mode are calculated by solving the vector wave equation using the finite difference method. It is found that the transparency window and slow light field can be controlled via the CW parameters. The reduced group velocity of slow light in this configuration is useful for many technological applications such as optical memories, effective control of single photon fields, optical buffer and delay line.
The authors demonstrate theoretically that there exists electromagnetically induced transparency in an asymmetric double quantum dot system using tunneling instead of pump laser. The group velocity slowdown factor is theoretically analyzed as a function of electron tunneling at different broadened linewidths. With feasible parameters for applications to a 100Gbits∕s optical network, numerical calculation infers group velocity as low as 300m∕s. The scheme is expected to be useful in constructing a variable semiconductor optical buffer based on electromagnetically induced transparency in an asymmetric double quantum dot controlled by voltage.