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Optics Express

Electromagnetically induced transparency viaelectron spin coherence in a quantum wellwaveguide

Tao Li, Hailin Wang, N. H. Kwong, Rolf H. Binder

Published Dec 1, 2003• 47 citations
Publisher

Abstract

We propose and analyze a novel scheme to realize electromagnetically induced transparency (EIT) via robust electron spin coherence in semiconductor quantum wells. This scheme uses light hole transitions in a quantum well waveguide to induce electron spin coherence in the absence of an external magnetic field. For certain polarization configurations, the light hole transitions form a crossed double-V system. EIT in this system is strongly modified by a coherent wave mixing process induced by the electron spin coherence.

DOI
10.1364/oe.11.003298

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We propose and analyze a novel scheme to realize electromagnetically induced transparency (EIT) via robust electron spin coherence in semiconductor quantum wells. This scheme uses light hole transitions in a quantum well waveguide to induce electron spin coherence in the absence of an external magnetic field. For certain polarization configurations, the light hole transitions form a crossed double-V system. EIT in this system is strongly modified by a coherent wave mixing process induced by the electron spin coherence.
This final technical report summarizes research supported by ARO in two areas: electromagnetically induced transparency (EIT) from electron spin coherence and cavity QED with nitrogen vacancy (NV) centers in diamond nanocrystals. We have developed three different schemes to realize EIT using electron spin coherence in semiconductor quantum wells. The three schemes include the use of V-type three-level systems via heavy hole excitonic transitions in an external magnetic field in the Voigt geometry, the use of V-type three-level systems via light hole excitonic transitions in a waveguide geometry and in the absence of an external magnetic field, and the use of a lamda-type three-level system in a mixed-type quantum well structure. We have achieved the breakthrough of realizing the strong coupling regime in cavity QED by coupling NV centers in diamond nanocrystals to whispering gallery modes in a deformed fused silica microsphere. In addition, our improved understanding on how electron spin coherence contributes to nonlinear optical processes in semiconductors has also led to the demonstration of a spin manipulation scheme that controls both the amplitude and phase of electron spin precessions.
In this paper, we review our recent experimental studies on electromagnetically induced transparency (EIT) from electron spin coherences in semiconductor quantum wells. Coherent Raman resonances, manifestations of EIT from electron spin coherences at relatively low pump intensities, were demonstrated in both V-type and Λ-type three-level systems via heavy-hole exciton and trion transitions in undoped and doped quantum wells, respectively. Coherent Raman resonances from electron spin coherences via light-hole transitions were also demonstrated in a waveguide geometry that enables a long optical interaction length as well as a large absorption coefficient. Experimental approaches that can avoid or reduce detrimental many-body effects in quantum wells are suggested for the realization of nearly ideal EIT processes.
We model the slow-light phenomenon using electromagnetically induced transparency from spin coherence in [110] quantum wells. The long electron-spin lifetime in [110] quantum wells and the strain-induced shift of the light-hole-like excitonic transition energy below those of the heavy-hole-like continuum states can enhance the performance of slow light. The optical anisotropy due to band mixing and strain in [110] quantum wells is properly taken into consideration. By using light-hole-like excitons, the delay of a probe light with TM polarization in an optical waveguide controllable by an intense pump is made possible with the aid of long spin coherence.
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Summary form only given. Electromagnetically induced transparency (EIT) refers to a phenomenon, whereby the optically resonant transition is rendered nearly transparent by applying a strong coupling laser field. The mechanism of EIT is usually explained in terms of quantum coherence or quantum interference. This EIT has attracted increasing interest because absorption associated with nonlinear optical processes can be removed. In the typical three-level /spl lambda/-system, which includes the ground state and the metastable state, when the atomic population is prepared in the superposition of the states by the coupling fields, the optical response of the media to the probe field is significantly modified. Since this is a coherent control of an electric field by another field via the atomic coherence, several schemes to control light coherently have been suggested. We propose an optical coherent control scheme of the polarization of optical pulses using the EIT quantum coherence, and numerically study its applicability to fast optical switching.
This PhD project contributes to a research field that aims to understand and extend the limits of how well quantum states of matter and optical fields can be prepared, controlled and detected. Central to this PhD research was the question whether an effect known as Electromagnetically Induced Transparency (EIT) can be realized with electron spins in a semiconductor. EIT forms the basis of many quantum-optical control schemes that use long-lived spin states. EIT can occur when two optical fields each drive a transition from one of two spin states to the same excited state. The application scenario is that information can be swapped between optical signal pulses and a memory function in matter, in a way that allows for processing the information in a quantum mechanical manner. Such quantum mechanical processing of information may lead to safer communication in optical fiber networks. A key result of this PhD project is the successful demonstration of EIT in the semiconductor material GaAs. The project used the spin of electrons that are located at donor atoms in the material. The thesis also reports on experiments that provide the foundation for this result, as well as on experiments that explore the limitations and possible improvements of the EIT effect in this material. This includes spectroscopy of the optical transitions of the donor atoms, studies of interactions between the spin of the donor electron and its semiconductor environment, and the design and development of unique instrumentation that was required for the research.