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Journal of Modern Optics

Electromagnetically induced transparency and slow light in a Λ-type three-level system of GaAs/AlGaAs multiple quantum wells

Wei Yan, T. Wang, X.M. Li, Yimin Jin

Published Feb 29, 2012• 15 citations
Publisher

Abstract

A Λ-type three-level system of GaAs/AlGaAs multiple quantum wells (MQWs) was constructed by using exciton spin coherence in the transient optical response. Theoretical analysis with density matrix and Maxwell equations then yielded the phase shift, absorption, group velocity and group velocity dispersion. The calculated velocity is ∼6.14 × 104 m/s and the corresponding pulse delay is ∼8 ps. A convenient basis is provided for investigating how many-body effects in semiconductors modify the magnitude, spectral shape, and space and time dependence of the electromagnetically induced transparency phenomenon.

DOI
10.1080/09500340.2012.666274

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A Λ-type three-level system of GaAs/AlGaAs multiple quantum wells (MQWs) was constructed by using exciton spin coherence in the transient optical response. Theoretical analysis with density matrix and Maxwell equations then yielded the phase shift, absorption, group velocity and group velocity dispersion. The calculated velocity is ∼6.14 × 104 m/s and the corresponding pulse delay is ∼8 ps. A convenient basis is provided for investigating how many-body effects in semiconductors modify the magnitude, spectral shape, and space and time dependence of the electromagnetically induced transparency phenomenon.
Electromagnetically-induced transparency (EIT) is observed and analyzed for the group velocity of a femtosecond light pulse interacting with GaAs/AlGaAs multiple quantum wells (MQWs) in a transient regime. The calculated slowdown factor of the group velocity inside the medium due to the dynamic refractive index change is approximately 2.10 x 10(3). We discuss the potential of EIT-induced slow light in GaAs/AlGaAs MQWs for ultrafast (approximately 210 GHz) all-optical information processing such as photon routing.
We report experimental studies of electromagnetically induced transparency (EIT) arising from exciton spin coherence in the transient optical response of GaAs quantum wells. The exciton spin coherence, which is a direct result of Coulomb correlations between excitons with opposite spins, is induced via bound or unbound two-exciton states. Theoretical analyses based on a three-level model illustrate the manifestation of EIT in a transient regime and provide qualitative guidance for understanding the transient behaviors observed in the EIT experiments. Additional studies of the effects of exciton energy renormalization on optical Stark splitting also provide insights on how exciton many-body interactions can lead to unusual time-dependent asymmetric EIT line shapes.
In this paper, we review our recent experimental studies on electromagnetically induced transparency (EIT) from electron spin coherences in semiconductor quantum wells. Coherent Raman resonances, manifestations of EIT from electron spin coherences at relatively low pump intensities, were demonstrated in both V-type and Λ-type three-level systems via heavy-hole exciton and trion transitions in undoped and doped quantum wells, respectively. Coherent Raman resonances from electron spin coherences via light-hole transitions were also demonstrated in a waveguide geometry that enables a long optical interaction length as well as a large absorption coefficient. Experimental approaches that can avoid or reduce detrimental many-body effects in quantum wells are suggested for the realization of nearly ideal EIT processes.