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انجمن اپتیک و فوتونیک ایران

An investigation of the electromagnetically induced transparency phenomenon in quantum wells

soheyla usefzadeh, mohamad javad karimi, Hassan Pakarzadeh

Published Mar 15, 2015• 0 citations
OpenAlex

Abstract

In this paper, the electromagnetically induced transparency (EIT) in a square GaAs / AlGaAs quantum well is studied theoretically. The effects of the well width and the relaxation rate on the optical absorption are investigated. The results show that the obtained EIT in this system, its frequency and the transparency window depend on the well width.

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Optics Express•Sep 19, 2008•21 citations
In this paper, the electromagnetically induced transparency (EIT) in a square GaAs / AlGaAs quantum well is studied theoretically. The effects of the well width and the relaxation rate on the optical absorption are investigated. The results show that the obtained EIT in this system, its frequency and the transparency window depend on the well width.
A Λ-type three-level system of GaAs/AlGaAs multiple quantum wells (MQWs) was constructed by using exciton spin coherence in the transient optical response. Theoretical analysis with density matrix and Maxwell equations then yielded the phase shift, absorption, group velocity and group velocity dispersion. The calculated velocity is ∼6.14 × 104 m/s and the corresponding pulse delay is ∼8 ps. A convenient basis is provided for investigating how many-body effects in semiconductors modify the magnitude, spectral shape, and space and time dependence of the electromagnetically induced transparency phenomenon.
Electromagnetically-induced transparency (EIT) is observed and analyzed for the group velocity of a femtosecond light pulse interacting with GaAs/AlGaAs multiple quantum wells (MQWs) in a transient regime. The calculated slowdown factor of the group velocity inside the medium due to the dynamic refractive index change is approximately 2.10 x 10(3). We discuss the potential of EIT-induced slow light in GaAs/AlGaAs MQWs for ultrafast (approximately 210 GHz) all-optical information processing such as photon routing.
Including an n-doped layer in asymmetric double quantum wells restricts confined carriers into V-shaped potential profiles, forming discrete conduction subbands and enabling intersubband transitions. Most studies on doped semiconductor heterostructures focus on how external fields and structural parameters dictate optical absorption. However, electromagnetically induced transparency remains largely unexplored. Here, we show that the effect of an n-doped layer GaAs/AlxGa1−xAs in an asymmetric double quantum well system is quite sensitive to the width and position of the doped layer. By self-consistently solving the Poisson and Schrödinger’s equations, we determine the electronic structure using the finite element method within the effective mass approximation. We found that the characteristics of the n-doped layer can modulate the resonance frequencies involved in the electromagnetically induced transparency phenomenon. Our results demonstrate that an n-doped layer can control the electromagnetically induced transparency effect, potentially enhancing its applications in optoelectronic devices.
We show how to compute nonlinear optical absorption spectra of an asymmetric double quantum well in the region of intersubband electronic transitions. The method uses the microscopic calculation of the dephasing due to electron–electron and electron–phonon scattering rates and the macroscopic real density matrix approach to compute the electromagnetic fields and susceptibilities. For a proper choice of the QW widths and of the driving fields we obtain electromagnetically induced transparency. Results are given for GaAs/GaAlAs QWs and experiments are proposed.
We report experimental studies of electromagnetically induced transparency (EIT) arising from exciton spin coherence in the transient optical response of GaAs quantum wells. The exciton spin coherence, which is a direct result of Coulomb correlations between excitons with opposite spins, is induced via bound or unbound two-exciton states. Theoretical analyses based on a three-level model illustrate the manifestation of EIT in a transient regime and provide qualitative guidance for understanding the transient behaviors observed in the EIT experiments. Additional studies of the effects of exciton energy renormalization on optical Stark splitting also provide insights on how exciton many-body interactions can lead to unusual time-dependent asymmetric EIT line shapes.
Electromagnetically induced transparency (EIT) was observed with transient optical response of exciton correlation in GaAs/AlGaAs quantum well structure. Decoherence of EIT was increased with temperature (12-60 K), which could be simulated by increasing non-radiation decay rate between coherently coupled ground states in Bloch equation for Lambda type three level. The non-radiation decay was mainly due to hole spin dephasing in the system for EIT via coulomb correlation. The hole spin dephasing rate was found with increasing lattice temperature and well accorded to the past results of time resolving method with n-doping material.