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Optics Express

Electromagnetically induced transparency on GaAs quantum well to observe hole spin dephasing

Hoonsoo Kang, Jong Su Kim, Sung In Hwang, Young‐Ho Park, Do‐Kyeong Ko, Jongmin Lee

Published Sep 19, 2008• 21 citations
Publisher

Abstract

Electromagnetically induced transparency (EIT) was observed with transient optical response of exciton correlation in GaAs/AlGaAs quantum well structure. Decoherence of EIT was increased with temperature (12-60 K), which could be simulated by increasing non-radiation decay rate between coherently coupled ground states in Bloch equation for Lambda type three level. The non-radiation decay was mainly due to hole spin dephasing in the system for EIT via coulomb correlation. The hole spin dephasing rate was found with increasing lattice temperature and well accorded to the past results of time resolving method with n-doping material.

DOI
10.1364/oe.16.015728

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AIP conference proceedings•Jan 1, 2011•0 citations
Electromagnetically induced transparency (EIT) was observed with transient optical response of exciton correlation in GaAs/AlGaAs quantum well structure. Decoherence of EIT was increased with temperature (12-60 K), which could be simulated by increasing non-radiation decay rate between coherently coupled ground states in Bloch equation for Lambda type three level. The non-radiation decay was mainly due to hole spin dephasing in the system for EIT via coulomb correlation. The hole spin dephasing rate was found with increasing lattice temperature and well accorded to the past results of time resolving method with n-doping material.
We report experimental studies of electromagnetically induced transparency (EIT) arising from exciton spin coherence in the transient optical response of GaAs quantum wells. The exciton spin coherence, which is a direct result of Coulomb correlations between excitons with opposite spins, is induced via bound or unbound two-exciton states. Theoretical analyses based on a three-level model illustrate the manifestation of EIT in a transient regime and provide qualitative guidance for understanding the transient behaviors observed in the EIT experiments. Additional studies of the effects of exciton energy renormalization on optical Stark splitting also provide insights on how exciton many-body interactions can lead to unusual time-dependent asymmetric EIT line shapes.
In this paper, we review our recent experimental studies on electromagnetically induced transparency (EIT) from electron spin coherences in semiconductor quantum wells. Coherent Raman resonances, manifestations of EIT from electron spin coherences at relatively low pump intensities, were demonstrated in both V-type and Λ-type three-level systems via heavy-hole exciton and trion transitions in undoped and doped quantum wells, respectively. Coherent Raman resonances from electron spin coherences via light-hole transitions were also demonstrated in a waveguide geometry that enables a long optical interaction length as well as a large absorption coefficient. Experimental approaches that can avoid or reduce detrimental many-body effects in quantum wells are suggested for the realization of nearly ideal EIT processes.
A Λ-type three-level system of GaAs/AlGaAs multiple quantum wells (MQWs) was constructed by using exciton spin coherence in the transient optical response. Theoretical analysis with density matrix and Maxwell equations then yielded the phase shift, absorption, group velocity and group velocity dispersion. The calculated velocity is ∼6.14 × 104 m/s and the corresponding pulse delay is ∼8 ps. A convenient basis is provided for investigating how many-body effects in semiconductors modify the magnitude, spectral shape, and space and time dependence of the electromagnetically induced transparency phenomenon.
We report the observation of electromagnetically induced transparency (EIT) with an ensemble of donor-bound electrons in low-doped n-GaAs. We used pure GaAs layers with Si doping at very low concentration in a strong magnetic field. EIT was implemented with the two optical transitions that exist for the three-level system that is formed by the two electron spin states and a donor-bound trion state. Our results show that EIT with n-GaAs can serve as a platform for studies of nonlocal quantum entanglement with spins in semiconductors, as well as for controlling and probing dynamical nuclear polarization with coherent electron spins.