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Crystals

Tuning Electromagnetically Induced Transparency in a Double GaAs/AlGaAs Quantum Well with Modulated Doping

C. A. Dagua-Conda, John A. Gil-Corrales, R. V. H. Hahn, R.L. Restrepo, Miguel Eduardo Mora-Ramos, Alvaro Luis Morales, C.A. Duque

Published Mar 6, 2025• 10 citations
Publisher

Abstract

Including an n-doped layer in asymmetric double quantum wells restricts confined carriers into V-shaped potential profiles, forming discrete conduction subbands and enabling intersubband transitions. Most studies on doped semiconductor heterostructures focus on how external fields and structural parameters dictate optical absorption. However, electromagnetically induced transparency remains largely unexplored. Here, we show that the effect of an n-doped layer GaAs/AlxGa1−xAs in an asymmetric double quantum well system is quite sensitive to the width and position of the doped layer. By self-consistently solving the Poisson and Schrödinger’s equations, we determine the electronic structure using the finite element method within the effective mass approximation. We found that the characteristics of the n-doped layer can modulate the resonance frequencies involved in the electromagnetically induced transparency phenomenon. Our results demonstrate that an n-doped layer can control the electromagnetically induced transparency effect, potentially enhancing its applications in optoelectronic devices.

DOI
10.3390/cryst15030248

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Including an n-doped layer in asymmetric double quantum wells restricts confined carriers into V-shaped potential profiles, forming discrete conduction subbands and enabling intersubband transitions. Most studies on doped semiconductor heterostructures focus on how external fields and structural parameters dictate optical absorption. However, electromagnetically induced transparency remains largely unexplored. Here, we show that the effect of an n-doped layer GaAs/AlxGa1−xAs in an asymmetric double quantum well system is quite sensitive to the width and position of the doped layer. By self-consistently solving the Poisson and Schrödinger’s equations, we determine the electronic structure using the finite element method within the effective mass approximation. We found that the characteristics of the n-doped layer can modulate the resonance frequencies involved in the electromagnetically induced transparency phenomenon. Our results demonstrate that an n-doped layer can control the electromagnetically induced transparency effect, potentially enhancing its applications in optoelectronic devices.
Linear, nonlinear and total optical absorption coefficients and relative refractive index changes for symmetric and asymmetric double V-shaped quantum well configurations formed within AlxGa1-xAs/GaAs heterostructure have been theoretically investigated. Responses of these coefficients to well widths, barrier widths and aluminium concentrations within the barrier as well as applied external electromagnetic fields were the subject of this study. The electronic spectra of the structures are obtained as a solution to the Schrödinger equation with relevant potential and external agents in the framework of effective mass and envelope wave function approximations. The optical properties are calculated by the analytical expressions obtained by iterative solutions within the compact density matrix approach. Although increasing barrier width and aluminium concentration act similarly significant red shifting on the referred coefficients for both symmetric and asymmetric double V-shaped wells, the varying well widths act differently for each configuration. Strengthening electric and magnetic fields shift the resonance peaks to blue for both symmetric and asymmetric wells. The results show that optical properties can be controlled by structural parameters, external probes and asymmetry of double V-shaped wells.
Abstract Linear, nonlinear and total optical absorption coefficients and relative refractive index changes for both symmetric and asymmetric double V-shaped quantum well configurations formed within AlxGa1-xAs/GaAs heterostructure are theoretically investigated. Responses of these coefficients to well widths, barrier widths and concentration of aluminum within the barrier as well as applied external electromagnetic fields are the subject of this study. The electronic spectra of the structures are obtained as a solution of Schrödinger equation with relevant potential and external agents in the framework of effective mass and envelope wave function approximations. The optical properties are calculated via the analytical expressions obtained by iterative solutions within compact density matrix approach. Although increasing barrier width and aluminum concentration act similar significant red shifting on the referred coefficients for both symmetric and asymmetric double V-shaped wells, the varying well widths acts differently for each configuration. Widening both wells in symmetric case moves the resonance peaks to lower energies, while the rise on only one well carries the resonance peaks to higher energies for asymmetric case. Enhancing both the electric and magnetic fields shift the resonance peaks to the blue for symmetric and also asymmetric wells. High dependency of the optical properties to the structural parameters and external electromagnetic fields as well as asymmetry of the wells is presented here in detail.
In this work, the ground and low-lying excited states in a GaAs coupled quantum dot-ring embedded in an AlGaAs cylindrical matrix are computed under the assumption of a finite confinement potential and an axisymmetric model by means of the finite element method and the effective mass approximation. The electron energy levels are studied as functions of the intensity of externally applied electric and magnetic fields. Electromagnetically induced transparency in the ladder configuration and linear optical absorption coefficient are calculated thereupon. Our results suggest that magnetic fields are more suitable than electric fields for controlling the optical properties of this nanostructure. Also, we found that the system's response, however, exhibits a striking asymmetry: while the electromagnetically induced transparency is unexpectedly quenched under positive electric fields due to vanishing dipole transition matrix elements, this limitation is completely overcome by a magnetic field. Its application not only restores optical transparency across the full range of electric field values but also drives substantially larger energy level shifts and clear Aharonov-Bohm oscillations, making it a far more robust tool for controlling the optical properties of confined electrons in dot-ring coupled heterostructures.
We show how to compute nonlinear optical absorption spectra of an asymmetric double quantum well in the region of intersubband electronic transitions. The method uses the microscopic calculation of the dephasing due to electron–electron and electron–phonon scattering rates and the macroscopic real density matrix approach to compute the electromagnetic fields and susceptibilities. For a proper choice of the QW widths and of the driving fields we obtain electromagnetically induced transparency. Results are given for GaAs/GaAlAs QWs and experiments are proposed.
This numerical study scrutinizes the impact of both the thickness of layers and an externally applied magnetic field on the optical absorption coefficient and alterations in the refractive index pertaining to the intersubband optical transition (1-2) within an asymmetric double parabolic structure, utilizing GaAs/AlGaAs quantum wells as a basis.Energy levels and their corresponding wave functions have been ascertained through the use of the shooting method.The findings of this investigation suggest a pronounced sensitivity of the optical absorption coefficient and changes in the refractive index to the thickness of the layers and the applied external magnetic field.It has been observed that the intensification of the magnetic field results in a resonant peak position shifting towards higher energy values, whereas the thickness of the layers exerts an influence on the resonance peak magnitude.The insights derived from this study hold considerable potential for application, particularly in the development of optical devices predicated on intersubband electronic transitions.