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Technical digest - International Electron Devices Meeting/Technical digest

Spectral hole burning of InAs self-assembled quantum dots written by two different lasers

Yoshihiro Sugiyama, Yoshihiro Nakata, Shunichi Muto, T. Futatsugi, Naoki Yokoyama

Published Nov 28, 2002• 1 citation
Publisher

Abstract

We report, for the first time, the two spectral holes in photocurrent of InAs self-assembled quantum dots embedded in a p-i-n diode irradiated by two different lasers. The estimated homogeneous broadening of less than 30 /spl mu/ eV for InAs QD implies the possibility of wavelength multiplicity of /spl ges/2800 for hole burning memory using QD. The spectral hole width irradiated by single mode YAG laser at 1064 nm showed temperature dependence of exp(T/30.9) in the range from 5 K to 80 K.

DOI
10.1109/iedm.1998.746394

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We report, for the first time, the two spectral holes in photocurrent of InAs self-assembled quantum dots embedded in a p-i-n diode irradiated by two different lasers. The estimated homogeneous broadening of less than 30 /spl mu/ eV for InAs QD implies the possibility of wavelength multiplicity of /spl ges/2800 for hole burning memory using QD. The spectral hole width irradiated by single mode YAG laser at 1064 nm showed temperature dependence of exp(T/30.9) in the range from 5 K to 80 K.
In this paper we report the dynamic properties of InAs self-assembled quantum dots for spectral hole burning memory applications. We measured the time constant of electron transport between InAs self-assembled quantum dots and the n-GaAs substrate by making use of the frequency dependence of the CV signal due to the InAs dots. We obtained a time constant of 2.1 /spl mu/s from experiments. The experimental results are well explained by equivalent circuit calculations and the theoretically calculated CR time constant. The time constant is expected to reach the sub-picosecond range in samples with a 10 nm barrier thickness.
We report the use of continuous wave spectral hole burning to perform high-resolution spectroscopy of the homogeneous linewidth of self-assembled InGaAs-GaAs quantum dots at low temperature. We use this technique to examine the power broadening behavior of the homogeneous InGaAs-GaAs quantum dot line. We find that at a temperature of 9.8 K and over the majority of the pump powers considered, the spectral hole signal is well fit by a single Lorentizian line shape. Analysis of the power broadening yields a full width at half maximum of 0.74μeV for the homogeneous linewidth and a corresponding coherence time T2 of 1.76 ns.
The Terahertz (THz) frequency domain is attractive for numerous applications including phonon spectroscopy, radio-astronomy, imaging, sensing and communication. Nevertheless the development of a compact, tunable, electrically driven room-temperature source operating in the THz band frequency [1-5 THz] remains a challenge. An alternative to low-temperature-cooled Quantum Cascade Lasers is the widely investigated photomixing technique which relies on semiconductor antenna fed by two laser fields beating at the targeted THz frequency. When a highly coherent CW emission is mandatory, a single laser cavity sustaining the oscillation of the two required laser fields is a very attractive approach. Indeed, the phase noises of the two optical fields being inherently correlated, the beatnote exhibits a high spectral purity. Following this paradigm, dual-frequency Quantum Wells (QWs) based Vertical External Cavity Surface Emitting Lasers (VECSELs) architectures have been successfully demonstrated [1][2][3]. Nevertheless, because of the inherent homogeneously broadened gain of QWs, the two laser modes suffer from strong coupling making it necessary to lift the spatial degeneracy inside the active medium. Moreover, the frequency detuning remains lower than in Quantum Dots (QDs). Accordingly, we have been exploring over the past years the benefits of using wider and potentially less homogeneously broadened gain medium such as Quantum Dots. To this aim, InAs QDs are grown on InP (311B) substrate, and characterized by photoluminescence and atomic force microscopy. The density (from 10^10 to 10^11 cm-2) and the size of QDs are carefully engineered while keeping a 1550 nm emission wavelength. To evaluate the potential of QDs for dual frequency oscillation, a critical parameter is the homogeneous linewidth. It is measured through Spectral Hole Burning (SHB) experiments using two tunable and continuous-wave lasers. In order to be as close as possible to the laser operation conditions, the SHB experiments are performed at high temperature levels and high carrier densities. In this talk, we will present our preliminary results from Spectral Hole Burning experiments conducted on both InAs/InP QDs and conventional InGaAs/InP QWs. The dedicated homemade measurement apparatus will be presented as well. This work is supported by the IDYLIC ANR project (ANR-15-CE24-0034-01).
A nonlinear device capable of handling multiple wavelength channels simultaneously by using spectral-hole burning in the inhomogeneous broadening of the gain in self-assembled quantum dots is proposed. The multichannel property of this device stems from the localized absorption or gain change at the pump wavelength within the inhomogeneously broadened gain spectrum. The spectral width of the modulation and its time evolution was also evaluated. The result indicates the applicability of this device to multichannel operation.