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IEEE Photonics Technology Letters

Application of spectral-hole burning in the inhomogeneously broadened gain of self-assembled quantum dots to a multiwavelength-channel nonlinear optical device

T. Akiyama, Haruhiko Kuwatsuka, Takashi Simoyama, Yoshihiro Nakata, Kohki Mukai, Mitsuru Sugawara, Osamu Wada, H. Ishikawa

Published Oct 1, 2000• 71 citations
Publisher

Abstract

A nonlinear device capable of handling multiple wavelength channels simultaneously by using spectral-hole burning in the inhomogeneous broadening of the gain in self-assembled quantum dots is proposed. The multichannel property of this device stems from the localized absorption or gain change at the pump wavelength within the inhomogeneously broadened gain spectrum. The spectral width of the modulation and its time evolution was also evaluated. The result indicates the applicability of this device to multichannel operation.

DOI
10.1109/68.883810

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A nonlinear device capable of handling multiple wavelength channels simultaneously by using spectral-hole burning in the inhomogeneous broadening of the gain in self-assembled quantum dots is proposed. The multichannel property of this device stems from the localized absorption or gain change at the pump wavelength within the inhomogeneously broadened gain spectrum. The spectral width of the modulation and its time evolution was also evaluated. The result indicates the applicability of this device to multichannel operation.
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We observe spectral hole burning in a room-temperature optical fiber pumped by a spectrally broadened pump beam. This beam drives the stimulated Brillouin process, creating an inhomogeneously broadened resonance in the material whose shape can be engineered by tailoring the beam's spectrum. A monochromatic saturating beam "burns" a narrow spectral hole that is approximately 10(4) times narrower than the inhomogeneous width of the resonance. This research paves the way toward agile optical information processing and storage using standard telecommunication components.
We report the use of continuous wave spectral hole burning to perform high-resolution spectroscopy of the homogeneous linewidth of self-assembled InGaAs-GaAs quantum dots at low temperature. We use this technique to examine the power broadening behavior of the homogeneous InGaAs-GaAs quantum dot line. We find that at a temperature of 9.8 K and over the majority of the pump powers considered, the spectral hole signal is well fit by a single Lorentizian line shape. Analysis of the power broadening yields a full width at half maximum of 0.74μeV for the homogeneous linewidth and a corresponding coherence time T2 of 1.76 ns.