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Electronics Letters

Observation of spectral hole burning in photocurrentspectrum of InAs self-assembled quantum dots embedded in pin diode

Yoshihiro Sugiyama, Yoshihiro Nakata, Shunichi Muto, Naoto Horiguchi, T. Futatsugi, Yuji Awano, Naoki Yokoyama

Published Sep 11, 1997• 14 citations
Publisher

Abstract

The spectral hole burning of InAs self-assembled quantum dots (QDs) embedded in a pin diode has been observed for the first time. The spectral hole depth increases as the electric field is increased. By numerical fitting to experimental results, the possibility of wavelength-domain multiplicity in optical memory by using InAs QDs is shown.

DOI
10.1049/el:19971096

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The spectral hole burning of InAs self-assembled quantum dots (QDs) embedded in a pin diode has been observed for the first time. The spectral hole depth increases as the electric field is increased. By numerical fitting to experimental results, the possibility of wavelength-domain multiplicity in optical memory by using InAs QDs is shown.
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A nonlinear device capable of handling multiple wavelength channels simultaneously by using spectral-hole burning in the inhomogeneous broadening of the gain in self-assembled quantum dots is proposed. The multichannel property of this device stems from the localized absorption or gain change at the pump wavelength within the inhomogeneously broadened gain spectrum. The spectral width of the modulation and its time evolution was also evaluated. The result indicates the applicability of this device to multichannel operation.