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AIP conference proceedings

Spectral hole burning by storage of electrons or holes

Till Warming

Published Jan 1, 2005• 0 citations
Publisher

Abstract

Spectral hole burning in spectra of self‐organized InAs/GaAs quantum dots is demonstrated. Resonant charging with holes and for the first time with electrons is observed as saturation in the absorption spectra. This enables investigations on longer time scales than the lifetime of radiative recombination, in view of quantum dot memory devices or spin storage. Varying temperatures and excitation densities reveal the character of carrier escape mechanisms.

DOI
10.1063/1.1994710

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Spectral hole burning in spectra of self‐organized InAs/GaAs quantum dots is demonstrated. Resonant charging with holes and for the first time with electrons is observed as saturation in the absorption spectra. This enables investigations on longer time scales than the lifetime of radiative recombination, in view of quantum dot memory devices or spin storage. Varying temperatures and excitation densities reveal the character of carrier escape mechanisms.
Femtosecond spectral hole burning experiments were performed on InAs/GaAs quantum dots to investigate the influence of high excitation intensities. The observation of additional spectral holes, as well as distinct absorption line broadening are both attributed to two-photon absorption processes. These spectral holes can be unambiguously assigned to degenerate two-photon biexciton creation, whereas the absorption line broadening is a direct result of Coulomb renormalization, initiated by carriers created through two-photon absorption in the surrounding GaAs crystal matrix and the InAs wetting layer.
In this paper we report the dynamic properties of InAs self-assembled quantum dots for spectral hole burning memory applications. We measured the time constant of electron transport between InAs self-assembled quantum dots and the n-GaAs substrate by making use of the frequency dependence of the CV signal due to the InAs dots. We obtained a time constant of 2.1 /spl mu/s from experiments. The experimental results are well explained by equivalent circuit calculations and the theoretically calculated CR time constant. The time constant is expected to reach the sub-picosecond range in samples with a 10 nm barrier thickness.
Abstract In this work femtosecond spectral hole burning spectroscopy is used to resonantly excite ground state excitons in an ensemble of self‐assembled InAs/GaAs quantum dots with a strong pump pulse. Two fundamental coherent nonlinear effects are observed with the aid of the intrinsic time‐ and frequency resolution of the setup: The low temperature Rabi oscillation of the two‐level system associated with the excitonic ground state transition and the observation of two‐photon absorption in the surrounding GaAs crystal matrix. The emergence of the latter effect also infers the existence of charged excitons in the nominally undoped QD sample, backed up by the observation of additional spectral holes next to the excitonic transitions. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)